SPP11N65C3_07 [INFINEON]
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated; 新的革命高电压技术，超低栅极电荷定期额定雪崩
| 型号： | SPP11N65C3_07 |
| 厂家： | 
Infineon |
| 描述： | New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |
| 文件： | 总15页 (文件大小：561K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP11N65C3,SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature
V
R
650
0.38
11
V
Ω
A
D
DS(on)
• New revolutionary high voltage technology
• Ultra low gate charge
I
D
PG-TO262
PG-TO220FP PG-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type
Package
Ordering Code
Q67040-S4557
Marking
SPP11N65C3
SPA11N65C3
PG-TO220
11N65C3
11N65C3
11N65C3
PG-TO220FP SP000216318
PG-TO262 Q67040-S4561
SPI11N65C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
Unit
SPA
Continuous drain current
I
A
D
1)
T = 25 °C
11
7
11
C
1)
T = 100 °C
7
C
Pulsed drain current, t limited by T
I
D puls
33
33
A
p
jmax
Avalanche energy, single pulse
E
340
340
mJ
AS
I =2.5A, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
0.6
0.6
AR
AR
jmax
jmax
I =4A, V =50V
D
DD
Avalanche current, repetitive t limited by T
I
4
20
4
A
V
AR
AR
Gate source voltage
V
V
P
20
30
33
GS
GS
Gate source voltage AC (f >1Hz)
30
Power dissipation, T = 25°C
125
W
C
tot
Operating and storage temperature
T , T
j
-55...+150
°C
stg
Rev. 2.9
Page 1
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 11 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
1
K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
thJC
3.8
62
80
R
thJC_FP
R
thJA
R
R
thJA_FP
thJA
@ min. footprint
-
-
-
-
35
-
62
-
2
3)
@ 6 cm cooling area
260 °C
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
Electrical Characteristics, at T =25°C unless otherwise specified
j
Parameter
Symbol
Conditions
Values
Unit
min.
650
-
typ. max.
V
V
=0V, I =0.25mA
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =4A
730
V
GS
D
(BR)DS
I =500µA, V =V
2.1
3
3.9
Gate threshold voltage
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
DS GS
µA
Zero gate voltage drain current
DSS
T =25°C
-
-
-
0.1
1
j
T =150°C
-
-
100
j
V
V
=20V, V =0V
GS DS
100 nA
Gate-source leakage current
I
GSS
=10V, I =7A
GS
Drain-source on-state resistance
R
Ω
D
DS(on)
T =25°C
-
-
-
0.34
0.92
0.86
0.38
j
T =150°C
-
-
j
R
f=1MHz, open drain
Gate input resistance
G
Rev. 2.9
Page 2
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
,
-
8.3
-
fs
DS DS(on)max
D
I =7A
D
Input capacitance
C
C
C
C
V
=0V, V =25V,
GS DS
-
-
-
-
1200
390
30
-
-
-
-
pF
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
4)
V
V
=0V,
GS
45
Effective output capacitance,
energy related
o(er)
=0V to 480V
DS
5)
-
85
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
Rise time
t
V
=380V, V =0/10V,
GS
-
-
-
-
10
5
-
-
ns
d(on)
DD
I =11A,
t
D
r
R =6.8Ω
Turn-off delay time
Fall time
t
44
5
70
9
G
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
V
=480V, I =11A
-
-
-
5.5
22
45
-
-
nC
V
gs
DD
D
Gate to drain charge
Q
gd
V
=480V, I =11A,
60
Gate charge total
Q
g
DD
D
V
=0 to 10V
GS
V
=480V, I =11A
-
5.5
-
Gate plateau voltage
V(plateau)
DD
D
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.9
Page 3
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
11
33
1.2
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
pulsed
I
-
-
SM
V
=0V, I =I
F S
-
-
-
-
-
1
400
6
V
Inverse diode forward voltage
Reverse recovery time
V
SD
GS
t
V =480V, I =I ,
600 ns
rr
R
F
S
di /dt=100A/µs
F
Reverse recovery charge
Peak reverse recovery current
Q
-
-
-
µC
A
rr
I
41
rrm
T =25°C
1200
A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
j
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
0.015
0.03
SPA
0.15
SPP_I
SPA
R
R
R
R
K/W
C
C
C
C
C
C
0.0001878 0.0001878 Ws/K
0.0007106 0.0007106
th1
th2
th3
th1
th2
th3
0.03
0.056
0.197
0.216
0.083
0.056
0.194
0.413
2.522
0.000988
0.002791
0.007285
0.063
0.000988
0.002791
0.007401
0.412
th4
th4
th5
Rth5
R
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Rev. 2.9
Page 4
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
P = f (T )
tot
P
tot
C
C
SPP11N65C3
35
140
W
W
120
110
100
90
80
70
60
50
40
30
20
10
0
25
20
15
10
5
0
°C
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120 °C 160
T
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V )
)
D
DS
D
DS
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
2
2
10
10
A
A
1
1
10
10
0
0
10
10
tp = 0.0008 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
tp = 0.0008 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
-1
-1
10
10
10
-2
10 0
-2
10 0
10
10 1
10 2
V
V
10 3
DS
10 1
10 2
V
V
10 3
DS
Rev. 2.9
Page 5
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
5 Transient thermal impedance FullPAK
= f (t )
6 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
D
p
DS
j
parameter: D = t /t
parameter: t = 10 µs, V
p
p
GS
1
10
40
K/W
20V
10V
A
8V
0
10
32
7V
28
24
20
16
12
8
6,5V
-1
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6V
-2
10
5,5V
-3
10
5V
4
4,5V
-4
10
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
s
10 1
0
3
6
9
12
15 18 21
V
27
t
V
DS
p
7 Typ. output characteristic
8 Typ. drain-source on resistance
R =f(I )
DS(on)
I = f (V ); T =150°C
D
D
DS
j
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
2
22
20V
8V
7V
A
Ω
4.5V
6V
4V
18
5V
5.5V
7.5V
6V
1.6
1.4
1.2
1
16
14
12
10
8
5.5V
5V
6
0.8
0.6
0.4
4.5V
4V
4
6.5V
8V
20V
2
0
0
5
10
15
V
25
DS
0
2
4
6
8
10 12 14 16
A
20
I
V
D
Rev. 2.9
Page 6
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
9 Drain-source on-state resistance
= f (T )
10 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
D GS DS D DS(on)max
DS(on)
j
parameter : I = 7 A, V = 10 V
parameter: t = 10 µs
D
p
GS
SPP11N65C3
40
2.1
Ω
A
25°C
1.8
1.6
1.4
1.2
1
32
28
24
20
16
12
8
150°C
0.8
0.6
0.4
0.2
0
98%
typ
4
0
°C
-60
-20
20
60
100
180
0
2
4
6
8
10
12
V
15
V
T
j
GS
11 Typ. gate charge
= f (Q
12 Forward characteristics of body diode
I = f (V )
V
)
Gate
F
SD
GS
parameter: I = 11 A pulsed
parameter: T , tp = 10 µs
D
j
SPP11N65C3
2 SPP11N65C3
10
16
V
A
12
1
10
0,2 VDS max
10
0,8 VDS max
8
6
4
2
0
0
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-1
10
V
0
10
20
30
40
50
70
Gate
0
0.4
0.8
1.2
1.6
2
2.4
3
nC
Q
V
SD
Rev. 2.9
Page 7
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
13 Typ. switching time
t = f (I ), inductive load, T =125°C
14 Typ. switching time
t = f (R ), inductive load, T =125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =6.8Ω
par.: V =380V, V =0/+13V, I =11 A
D
DS
GS
G
DS
GS
350
70
ns
ns
60
55
50
45
40
35
30
25
20
15
10
5
td(off)
250
200
150
100
50
td(off)
td(on)
tr
tf
tf
td(on)
tr
2
0
0
0
4
6
8
A
12
0
10
20
30
40
50
70
Ω
I
R
D
G
15 Typ. drain current slope
di/dt = f(R ), inductive load, T = 125°C
16 Typ. drain source voltage slope
dv/dt = f(R ), inductive load, T = 125°C
G
j
G
j
par.: V =380V, V =0/+13V, I =11A
par.: V =380V, V =0/+13V, I =11A
D
D
DS
GS
DS
GS
140
3000
V/ns
dv/dt(off)
A/µs
120
110
100
90
2000
1500
1000
500
0
80
70
60
50
di/dt(off)
40
dv/dt(on)
30
di/dt(on)
20
10
0
20
40
60
80
120
0
10
20
30
40
50
70
Ω
Ω
R
R
G
G
Rev. 2.9
Page 8
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
17 Typ. switching losses
E = f (I ), inductive load, T =125°C
18 Typ. switching losses
E = f(R ), inductive load, T =125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =6.8Ω
par.: V =380V, V =0/+13V,I =11A
D
DS GS
DS
GS
G
0.04
0.24
*) Eon includes SPD06S60 diode
commutation losses
*) Eon includes SPD06S60 diode
commutation losses
mWs
mWs
0.03
0.025
0.02
0.015
0.01
0.005
0
0.16
0.12
0.08
0.04
0
Eoff
Eon*
Eon*
Eoff
0
2
4
6
8
A
12
0
10
20
30
40
50
70
Ω
I
R
D
G
19 Avalanche SOA
= f (t )
20 Avalanche energy
E = f (T )
AS
I
AR
AR
j
par.: T ≤ 150 °C
par.: I = 2.5 A, V = 50 V
D
j
DD
350
4
A
mJ
3
2.5
2
T
=25°C
j(Start)
250
200
150
100
50
T
=125°C
j(Start)
1.5
1
0.5
0
0
20
10 -3 10 -2 10 -1 10 0 10 1 10 2
µs 10 4
40
60
80
100
120
°C
160
t
T
AR
j
Rev. 2.9
Page 9
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
21 Drain-source breakdown voltage
22 Avalanche power losses
P = f (f )
AR
V
= f (T )
(BR)DSS
j
parameter: E =0.6mJ
AR
785
V
300
W
745
725
705
685
665
645
625
605
200
150
100
50
0
585
-60
10 4
10 5
Hz
10 6
-20
20
60
100
180
°C
T
f
j
23 Typ. capacitances
24 Typ. C
stored energy
oss
C = f (V )
E
=f(V )
oss
DS
DS
parameter: V =0V, f=1 MHz
GS
4
10
7.5
µJ
pF
C
iss
6
5.5
5
3
10
4.5
4
2
10
C
oss
3.5
3
2.5
2
1
10
10
C
rss
1.5
1
0.5
0
0
0
100
200
300
400
V
600
0
100
200
300
400
V
600
V
V
DS
DS
Rev. 2.9
Page 10
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Definition of diodes switching characteristics
Rev. 2.9
Page 11
2007-08-30
SPP11N65C3, SPA11N65C3
SPI11N65C3
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.9
Page 12
2007-08-30
SPP11N65C3, SPA11N65C3
SPI11N65C3
PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute )
Rev. 2.9
Page 13
2007-08-30
SPP11N65C3, SPA11N65C3
SPI11N65C3
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
Rev. 2.9
Page 14
2007-08-30
SPP11N65C3,SPA11N65C3
SPI11N65C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.9
Page 15
2007-08-30
相关型号：
UL1042
UL1042 - Uk砤d zr體nowa縪nego mieszacza iloczynowegoWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
ZXFV201
QUAD VIDEO AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
ZXFV201N14
IC-SM-VIDEO AMPWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
ZXFV201N14TA
QUAD VIDEO AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
ZXFV201N14TC
QUAD VIDEO AMPLIFIERWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
ZXFV302N16
IC-SM-4:1 MUX SWITCHWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ETC
ZXFV4089
VIDEO AMPLIFIER WITH DC RESTORATIONWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
ZETEX
©2020 ICPDF网 联系我们和版权申明