SPP17N80C3_07 [INFINEON]
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge; 在220超低栅极电荷新的革命高电压技术，全球最佳的RDS（on ）
| 型号： | SPP17N80C3_07 |
| 厂家： | 
Infineon |
| 描述： | New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge |
| 文件： | 总13页 (文件大小：585K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPP17N80C3
SPA17N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
800
0.29
17
V
Ω
A
DS
R
DS(on)
I
D
• Worldwide best R
in TO 220
DS(on)
PG-TO220-3-31 PG-TO220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
3
2
1
P-TO220-3-31
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP17N80C3
PG-TO220
Q67040-S4353
17N80C3
SPA17N80C3
PG-TO220-3-31 SP000216353
17N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP
SPA
Continuous drain current
I
A
D
1)
T = 25 °C
17
11
17
11
C
1)
T = 100 °C
C
Pulsed drain current, t limited by T
I
D puls
51
51
A
p
jmax
Avalanche energy, single pulse
E
670
670
mJ
AS
I =3.4A, V =50V
D
DD
2)
E
Avalanche energy, repetitive t limited by T
0.5
0.5
AR
AR
jmax
I =17A, V =50V
D
DD
Avalanche current, repetitive t limited by T
Gate source voltage
I
17
±20
30
17
±20
30
A
V
AR
jmax
AR
V
V
P
GS
GS
tot
Gate source voltage AC (f >1Hz)
Power dissipation, T = 25°C
208
42
W
C
Operating and storage temperature
T
,
T
-55...+150
°C
Rev. 2.6
Page 1
2007-08-30
SPP17N80C3
SPA17N80C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 640 V, I = 17 A, T = 125 °C
DS
D j
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
-
-
-
0.6 K/W
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
thJC
3.6
62
80
R
thJC_FP
R
thJA
R
thJA_FP
R
thJA
@ min. footprint
@ 6 cm cooling area
-
-
-
-
35
-
62
-
260 °C
2
3)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
T
sold
4)
Electrical Characteristics, at T =25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
800
-
typ. max.
V
V
=0V, I =0.25mA
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =17A
870
-
V
GS
D
(BR)DS
I =1000µA, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
V
=800V, V =0V,
DS GS
µA
DSS
T =25°C
-
-
-
0.5
-
-
25
250
100 nA
j
T =150°C
j
V
V
=20V, V =0V
Gate-source leakage current
I
GS
GS
DS
GSS
=10V, I =11A
Drain-source on-state resistance R
Ω
D
DS(on)
T =25°C
-
-
-
0.25
0.78
0.7
0.29
-
j
T =150°C
j
R
f=1MHz, open drain
-
Gate input resistance
G
Rev. 2.6
Page 2
2007-08-30
SPP17N80C3
SPA17N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R ,
DS DS(on)max
-
15
-
fs
D
I =11A
D
Input capacitance
C
C
C
C
V
=0V, V =25V,
GS DS
-
-
-
-
2320
1250
60
-
-
-
-
pF
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
5)
V
V
=0V,
GS
59
Effective output capacitance,
energy related
o(er)
=0V to 480V
DS
6)
-
124
-
Effective output capacitance,
time related
C
o(tr)
Turn-on delay time
t
V
=400V, V =0/10V,
GS
-
-
-
-
25
15
72
6
-
-
82
9
ns
d(on)
DD
I =17A,
Rise time
t
D
r
R =4.7Ω, T =125°C
Turn-off delay time
Fall time
t
G
j
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=640V, I =17A
-
-
-
12
46
91
-
-
nC
V
gs
gd
g
DD
D
V
V
=640V, I =17A,
177
Gate charge total
DD
D
=0 to 10V
GS
V
=640V, I =17A
-
6
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Limited only by maximum temperature
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
5
Soldering temperature for TO-263: 220°C, reflow
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS
.
6
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Rev. 2.6
Page 3
2007-08-30
SPP17N80C3
SPA17N80C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
17
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
51
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
550
15
51
1200
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =400V, I =I ,
-
-
-
-
ns
µC
A
rr
R
F
S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
I
F
rr
rrm
T =25°C
A/µs
Peak rate of fall of reverse
recovery current
di /dt
j
rr
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP
0.00812
0.016
0.031
0.114
0.135
0.059
SPP
SPA
0.00812
0.016
0.031
0.16
SPA
R
R
R
R
Rth5
R
K/W
C
th1
0.0003562 0.0003562 Ws/K
th1
th2
th3
th4
C
0.001337
0.001831
0.005033
0.012
0.001337
0.001831
0.005033
0.008657
0.412
th2
C
th3
C
th4
0.324
2.522
C
th5
C
0.092
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Rev. 2.6
Page 4
2007-08-30
SPP17N80C3
SPA17N80C3
1 Power dissipation
= f (T )
2 Power dissipation FullPAK
P
P
= f (T )
tot
C
tot
C
SPP17N80C3
45
240
W
W
200
180
160
140
120
100
80
35
30
25
20
15
10
5
60
40
20
0
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
T
°C
T
C
C
3 Safe operating area
I = f ( V
4 Safe operating area FullPAK
I = f (V )
)
D
DS
D
DS
parameter : D = 0 , T =25°C
parameter: D = 0, T = 25°C
C
C
10 2
10 2
A
A
10 1
10 1
10 0
10 0
tp = 0.001 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
10 -1
tp = 10 ms
DC
10 -2
10 -2
10 0
10 1
10 2
10 3
10 0
10 1
10 2
10 3
V
V
V
V
DS
DS
Rev. 2.6
Page 5
2007-08-30
SPP17N80C3
SPA17N80C3
5 Transient thermal impedance
= f (t )
6 Transient thermal impedance FullPAK
Z
Z
= f (t )
thJC
p
thJC
p
parameter: D = t /T
parameter: D = t /t
p
p
10 1
10 1
K/W
K/W
10 0
10 -1
10 -2
10 -3
10 -4
10 0
10 -1
10 -2
10 -3
10 -4
D = 0.5
D = 0.2
D = 0.5
D = 0.1
D = 0.2
D = 0.05
D = 0.02
D = 0.01
single pulse
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
10 1
s
s
p
t
t
p
7 Typ. output characteristic
I = f (V ); T =25°C
8 Typ. output characteristic
I = f (V ); T =150°C
D
DS
j
D
DS
j
parameter: t = 10 µs, V
parameter: t = 10 µs, V
p
GS
p
GS
35
70
A
20V
10V
8V
20V
10V
A
60
55
50
45
40
35
30
25
20
15
10
5
7V
25
20
15
10
5
6.5V
6V
8V
7V
6V
5.5V
5V
4.5V
4V
5V
0
0
0
5
10
15
20
30
0
5
10
15
20
30
V
V
DS
DS
V
V
Rev. 2.6
Page 6
2007-08-30
SPP17N80C3
SPA17N80C3
9 Typ. drain-source on resistance
=f(I )
10 Drain-source on-state resistance
R = f (T )
DS(on)
R
DS(on)
D
j
parameter: T =150°C, V
parameter : I = 11 A, V = 10 V
j
GS
D
GS
SPP17N80C3
1.5
1.6
Ω
Ω
1.3
1.2
1
1.2
4.5V
5.5V
4V
5V
6V
1.1
1
6.5V
0.8
0.6
0.4
0.2
0
0.9
0.8
0.7
0.6
0.5
7V
8V
98%
typ
10V
20V
°C
0
5
10
15
20
25
35
-60
-20
20
60
100
180
A
I
T
D
j
11 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
12 Typ. gate charge
= f (Q
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 17 A pulsed
p
D
SPP17N80C3
65
A
16
V
25°C
55
50
45
40
35
30
25
20
15
10
5
12
0,2 VDS max
0,8 VDS max
10
150°C
8
6
4
2
0
0
0
2
4
6
8
10 12 14 16
20
V
V
GS
0
20
40
60
80 100 120
160
nC
Q
Gate
Rev. 2.6
Page 7
2007-08-30
SPP17N80C3
SPA17N80C3
13 Forward characteristics of body diode
I = f (V )
14 Avalanche SOA
= f (t )
I
F
SD
AR
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 2
SPP17N80C3
18
A
A
14
12
10
8
10 1
10 0
6
Tj = 25 °C typ
Tj(START)=25°C
Tj = 150 °C typ
4
Tj = 25 °C (98%)
Tj = 150 °C (98%)
2
Tj(START)=125°C
10 -1
0
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
V
µs
AR
t
SD
15 Avalanche energy
= f (T )
16 Drain-source breakdown voltage
E
V
= f (T )
AS
j
(BR)DSS
j
par.: I = 3.4 A, V = 50 V
D
DD
SPP17N80C3
980
V
700
mJ
600
550
500
450
400
350
300
250
200
150
100
50
940
920
900
880
860
840
820
800
780
760
740
720
0
25
50
75
100
150
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Rev. 2.6
Page 8
2007-08-30
SPP17N80C3
SPA17N80C3
17 Avalanche power losses
= f (f )
18 Typ. capacitances
C = f (V )
P
AR
DS
parameter: E =0.5mJ
parameter: V =0V, f=1 MHz
AR
GS
10 5
500
pF
W
10 4
400
350
300
250
200
150
100
50
Ciss
10 3
10 2
Coss
10 1
Crss
10 0
0
10 4
10 5
10 6
0
100 200 300 400 500 600
800
DS
Hz
V
V
f
19 Typ. C
stored energy
oss
E
=f(V )
oss
DS
18
µJ
14
12
10
8
6
4
2
0
0
100 200 300 400 500 600
800
DS
V
V
Rev. 2.6
Page 9
2007-08-30
SPP17N80C3
SPA17N80C3
Definition of diodes switching characteristics
Rev. 2.6
Page 10
2007-08-30
SPP17N80C3
SPA17N80C3
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.6
Page 11
2007-08-30
SPP17N80C3
SPA17N80C3
PG-TO220-3-31 (FullPAK)
Rev. 2.6
Page 12
2007-08-30
SPP17N80C3
SPA17N80C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.6
Page 13
2007-08-30
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