SPW52N50C3 [INFINEON]
Cool MOS⑩ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPW52N50C3 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS⑩ Power Transistor |
| 文件： | 总11页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPW52N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
@ T
560
0.07
52
V
Ω
A
DS
jmax
R
DS(on)
I
D
• Worldwide best R
in TO 247
DS(on)
P-TO247
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPW52N50C3
Package
P-TO247
Ordering Code
Q67040-S4615
Marking
52N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
52
30
C
T = 100 °C
C
156
1800
Pulsed drain current, t limited by T
Avalanche energy, single pulse
I
E
p
jmax
D puls
mJ
AS
I = 10 A, V = 50 V
D
DD
jmax
E
1
Avalanche energy, repetitive t limited by T
AR
AR
I = 20 A, V = 50 V
D
DD
20
A
V
Avalanche current, repetitive t limited by T
Gate source voltage
I
V
AR
jmax AR
±20
30
417
GS
V
P
Gate source voltage AC (f >1Hz)
GS
tot
Power dissipation, T = 25°C
W
C
°C
Operating and storage temperature
T , T
-55... +150
Page 1
Rev. 2.0
2004-03-16
SPW52N50C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 400 V, I = 52 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
-
-
0.3 K/W
62
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
thJC
R
thJA
T
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V, I =0.25mA 500
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =20A
-
600
V
GS
D
(BR)DS
I =2700µΑ, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=500V, V =0V,
µA
DS
GS
DSS
T =25°C,
-
-
0.5
-
25
250
j
T =150°C
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GSS
GS
DS
=10V, I =30A,
Ω
GS
D
DS(on)
T =25°C
-
-
-
0.06
0.16
0.7
0.07
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Page 2
Rev. 2.0
2004-03-16
SPW52N50C3
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
40
-
fs
DS
D
I =30A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
6800
2200
150
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
2)
V
V
=0V,
Effective output capacitance,
energy related
C
212
pF
ns
GS
o(er)
=0V to 400V
DS
3)
Effective output capacitance,
time related
C
-
469
-
o(tr)
Turn-on delay time
t
V
=380V, V =0/10V,
-
-
-
-
20
30
120
10
-
-
-
-
d(on)
DD
GS
I =52A, R =1.8Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=380V, I =52A
-
-
-
30
160
290
-
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=380V, I =52A,
Gate charge total
DD
D
=0 to 10V
GS
V
=380V, I =52A
-
5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
3
Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
.
Page 3
Rev. 2.0
2004-03-16
SPW52N50C3
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
52
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
156
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
580
20
70
900
1.2
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =380V, I =I ,
-
-
-
-
ns
µC
A
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
F
I
rrm
A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.002689
0.005407
0.011
K/W
0.001081
0.004021
0.005415
0.014
R
R
R
R
C
Ws/K
th1
th2
th3
th4
th1
C
th2
C
th3
0.054
C
th4
0.071
0.025
Rth5
C
th5
0.036
R
C
0.158
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
Rev. 2.0
2004-03-16
SPW52N50C3
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 3
SPW52N50C3
500
W
A
10 2
10 1
400
350
300
250
200
150
100
50
tp = 0.001 ms
10 0
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 -1
10 -2
0
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
T
V
V
C
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 0
280
K/W
20V
A
7.5V
10 -1
10 -2
10 -3
10 -4
200
160
120
80
7V
6.5V
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
6V
5.5V
single pulse
40
5V
4.5V
V
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
0
4
8
12
16
20
26
s
t
V
p
DS
Page 5
Rev. 2.0
2004-03-16
SPW52N50C3
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
160
0.5
20V
A
Ω
4V 4.5V
5V
5.5V
6V
6.5V
6.5V
120
100
80
60
40
20
0
0.4
0.35
0.3
6V
5.5V
0.25
0.2
5V
4.5V
4V
20V
160
0.15
0.1
0
4
8
12
16
20
26
0
20
40
60
80 100 120
V
A
I
V
D
DS
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
R
I = f ( V ); V ≥ 2 x I x R
DS(on)
j
D
GS
DS
D
DS(on)max
parameter : I = 30 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPW52N50C3
280
0.38
Ω
A
25°C
0.32
0.28
0.24
0.2
200
160
120
80
0.16
0.12
0.08
0.04
0
150°C
98%
typ
40
0
°C
-60
-20
20
60
100
180
0
1
2
3
4
5
6
7
8
10
V
V
T
GS
j
Page 6
Rev. 2.0
2004-03-16
SPW52N50C3
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
V
)
I = f (V
)
GS
Gate
F
SD
parameter: I = 52 A pulsed
parameter: T , tp = 10 µs
D
10 3
SPW52N50C3
SPW52N50C3
16
V
A
12
10 2
0.2 VDS max
10
0.8 VDS max
8
6
4
2
0
10 1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
nC
40 80 120 160 200 240 280 320 360
0
420
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Avalanche SOA
12 Avalanche energy
E = f (T )
AS
I
= f (t
)
AR
AR
j
par.: T ≤ 150 °C
par.: I = 10 A, V = 50 V
j
D
DD
20
2
A
16
14
12
10
8
mJ
Tj (START)=25°C
1
0.5
0
6
Tj(START)=125°C
4
2
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
20
40
60
80
100
120
160
µs
t
°C
T
AR
j
Page 7
Rev. 2.0
2004-03-16
SPW52N50C3
13 Drain-source breakdown voltage
= f (T )
14 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =1mJ
AR
SPW52N50C3
1000
600
V
-
800
700
600
500
400
300
200
100
570
560
550
540
530
520
510
500
490
480
470
460
450
0
10 4
-60
-20
20
60
100
180
10 5
10 6
°C
Hz
T
f
j
15 Typ. capacitances
C = f (V
16 Typ. C
stored energy
oss
)
E
=f(V
)
DS
oss
DS
parameter: V =0V, f=1 MHz
GS
10 5
24
µJ
pF
Ciss
20
10 4
18
16
14
12
10
8
10 3
Coss
10 2
6
Crss
4
2
10 1
0
0
100
200
300
400
600
DS
0
100
200
300
500
DS
V
V
V
V
Page 8
Rev. 2.0
2004-03-16
SPW52N50C3
Definition of diodes switching characteristics
Page 9
Rev. 2.0
2004-03-16
SPW52N50C3
P-TO-247-3-1
15.9
6.35
5.03
ø3.61
2.03
D
7
2.97 x 0.127
D
1.14
0.243
0.762 MAX.
2.4 +0.05
1.2
2
2.92
5.46
General tolerance unless otherwise specified: Leadframe parts: 0.05
Package parts: 0.12
Page 10
Rev. 2.0
2004-03-16
SPW52N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
Rev. 2.0
2004-03-16
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