ST083S04PHK0PBF [INFINEON]
Silicon Controlled Rectifier, 135A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC;
| 型号： | ST083S04PHK0PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 135A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AC |
| 文件： | 总9页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25185 rev. B 03/94
ST083S SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
85A
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST083S
Units
A
85
85
@ TC
°C
IT(RMS)
ITSM
135
2450
A
A
@50Hz
@ 60Hz
@50Hz
@ 60Hz
2560
A
I2t
30
KA2s
KA2s
V
27
VDRM/VRRM
400 to 1200
10 to 30
- 40 to 125
case style
TO-209AC (TO-94)
t
range (*)
µs
q
TJ
°C
(*) t = 10 to 20µs for 400 to 800V devices
q
t
= 15 to 30µs for 1000 to 1200V devices
q
1
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ST083S Series
Bulletin I25185 rev. B 03/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST083S
repetitive peak voltage
non-repetitive peak voltage
V
V
04
08
10
12
400
800
1000
1200
500
900
30
1100
1300
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
2540
1190
630
250
50
180oel
50Hz
400Hz
210
200
120
120
330
350
270
210
1930
810
1000Hz
150
70
80
25
50
320
220
50
190
85
400
100
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
50
50
VDRM
VDRM
VDRM
50
60
50
85
-
-
-
-
A/µs
Case temperature
60
85
60
85
°C
Equivalent values for RC circuit
22Ω / 0.15µF
22Ω / 0.15µF
22Ω / 0.15µF
On-state Conduction
Parameter
ST083S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
85
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
135
DC @ 77°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2√s t = 0.1 to 10ms, no voltage reapplied
ITSM
Max. peak, one half cycle,
non-repetitive surge current
2450
2560
2060
2160
30
A
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
27
KA2s
21
19
I2√t
Maximum I2√t for fusing
300
2
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ST083S Series
Bulletin I25185 rev. B 03/94
On-state Conduction
Parameter
ST083S
2.15
Units Conditions
VTM
Max. peak on-state voltage
ITM= 300A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.46
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.52
2.32
2.34
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
t
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
t2
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST083S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
A/µs
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.80
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs
Min Max
t
Max. turn-off time (*)
10
30
VR = 50V, t = 200µs, dv/dt: see table in device code
p
q
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
q
q
Blocking
Parameter
ST083S
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max., linear to 80% VDRM, higher value
V/µs
available on request
IRRM
IDRM
Max. peak reverse and off-state
leakage current
30
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST083S
Units Conditions
PGM
40
5
W
A
TJ = TJ max, f = 50Hz, d% = 50
5
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST083S Series
Bulletin I25185 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
ST083S
Units
°C
Conditions
TJ
T
Max. junction operating temperature range -40 to 125
Max. storage temperature range
-40 to 150
0.195
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
DC operation
K/W
0.08
Mounting surface, smooth, flat and greased
T
Mounting torque, ± 10%
15.5
(137)
14
Nm
(Ibf-in)
Nm
Non lubricated threads
Lubricated threads
(120)
130
(Ibf-in)
g
wt
Approximate weight
Case style
TO-209AC (TO-94)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.034
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 08
3
S
12
P
F
K
0
3
4
6
7
1
2
5
8
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
- P = Stud Base 1/2" 20UNF
dv/dt - tq combinations available
- Reapplied dv/dt code (for tq Test Condition)
- tq code
dv/dt (V/µs) 20
50
100 200 400
EN FN * HN
EM FM * HM
t (µs)
q
10
12
15
18
20
CN
CM
CL
CP
CK
DN
DM
DL
DP
DK
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
up to 800V
EL
EP
EK
FL
FP * HP
FK * HK
HL
t (µs)
q
15
18
20
25
30
CL
CP
CK
CJ
--
--
--
--
FP *
FK * HK
FJ
--
--
DP
DK
DJ
DH
EP
EK
EJ
EH
10 - Critical dv/dt:
None = 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
only for
1000/1200V
HJ
HH
FH
L
*Standard part number.
All other types available only on request.
4
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ST083S Series
Bulletin I25185 rev. B 03/94
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
8.5 (0.33) DIA.
.
2.6 (0.10) MAX.
N
I
M
4.3 (0.17) DIA
)
7
3
.
0
(
5
.
9
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
1/2"-20UNF-2A
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
29.5 (1.16)
MAX.
CERAMIC HOUSING
FLAG TERMINALS
22.5 DIA.
5.2 (0.20) DIA.
(0.89) MAX.
1.5 (0.06) DIA.
7.5
(0.30)
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
1/2"-20UNF-2A
2.4 (0.09)
29.5 (1.16)
5
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ST083S Series
Bulletin I25185 rev. B 03/94
130
130
120
110
100
90
ST083S Se rie s
ST083S Se rie s
R
(DC ) = 0.195 K/W
R
(DC) = 0.195 K/ W
thJC
thJC
120
110
100
90
C o nd uc tio n Ang le
C on d uc tio n Pe riod
30°
60°
30°
90°
120°
60°
80
90°
120°
180°
DC
180°
80
70
0
10 20 30 40 50 60 70 80 90
Ave ra g e O n-sta te C urre n t (A)
0
20
40
60
80 100 120 140
Ave ra g e On -sta te C urre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
180
R
180°
120°
90°
60°
30°
160
=
0
0
.
.
4
1
K
140
120
100
80
/
K
W
/
W
-
D
e
l
t
a
R
0
.
8
RMS Limit
K
/
W
60
C o nd uc tio n Ang le
40
ST083S Se rie s
T
= 125°C
20
J
0
0
10 20 30 40 50 60 70 80
90
50
75
100
125
Ave ra g e On-sta te C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
250
200
150
DC
180°
120°
90°
60°
30°
0
.
2
K
/
W
0
.
5
K
/
W
0
100 RMS Lim it
.
8
K
/
Co nd uc tio n Pe rio d
W
1
. 2
K
/
W
ST083S Se rie s
50
0
T = 125°C
J
0
20
Ave ra g e On -sta te C urre nt (A)
Fig. 4 - On-state Power Loss Characteristics
40
60
80 100 120 140
2
50
75
100
125
Ma ximum Allo wa b le Amb ie nt Te mp e ra ture (°C )
6
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ST083S Series
Bulletin I25185 rev. B 03/94
2200
2000
1800
1600
1400
1200
1000
2600
2400
2200
2000
1800
1600
1400
1200
1000
At Any Ra te d Lo a d C o nd itio n And With
Ra te d V Ap p lie d Fo llo win g Surg e .
Ma xim um No n Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion . C ontro l
O f Co nd uc tion Ma y Not Be Ma inta ine d .
RRM
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Vo lta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
ST083S Se rie s
ST083S Se rie s
0.01
0.1
1
1
10
100
Numb e r O f Eq u a l Amp litud e Ha lf C yc le Cu rre nt Pulse s (N)
Pulse Tra in Dura tio n (s)
Fig. 5 - Maximum Non-repetitive Surge Current
Fig. 6 - Maximum Non-repetitive Surge Current
10000
1
Ste a d y Sta te Va lue
R
= 0.195 K/W
thJ C
(DC O p e ra tion )
T = 25°C
J
0.1
1000
T = 125°C
J
ST083S Se rie s
ST083S Se rie s
0.01
100
0.001
0.01
0.1
1
10
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Sq ua re Wa ve Pulse Dura tio n (s)
Insta n ta n e ous O n-sta te Vo lta g e (V)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
160
140
120
100
80
120
110
100
90
I
= 500 A
TM
I
= 500 A
TM
ST083S Se rie s
T = 125 °C
300 A
200 A
100 A
J
300 A
200 A
80
70
50 A
100 A
60
50
60
40
50 A
ST083S Se rie s
30
T = 125 °C
40
J
20
20
10
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll O f On-sta te Curre nt - d i/ d t (A/ µs)
Ra te Of Fa ll Of Forwa rd C urre n t - d i/d t (A/ µs)
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
7
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ST083S Series
Bulletin I25185 rev. B 03/94
1E4
1E3
Snub b e r c irc u it
Snub b e r c irc uit
R
C
V
s
= 22 ohm s
= 0.15 µF
= 80% V
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
s
D
D
DRM
DRM
100 50 Hz
200
400
1000 500
1500
2000
50 Hz
200 100
400
1000
500
1500
2000
2500
3000
1E2
2500
3000
ST083S Se rie s
Sinuso id a l p ulse
ST083S Se rie s
Sinuso id a l p ulse
T = 85°C
tp
T
= 60°C
C
tp
C
1E1
1E1
11
E1
1E2
1E3
1E4
1E2
1E3
1E1E44
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 11 - Frequency Characteristics
1E4
ST083S Se rie s
Tra p e zo id a l p ulse
= 85°C
Snu b b e r c irc uit
Snub b e r c irc uit
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
R
C
V
= 22 o hm s
= 0.15 µF
= 80% V
s
s
T
C
s
s
D
tp
d i/d t = 50A/µs
D
DRM
DRM
1E3
1E2
1E1
50 Hz
100
200
400
500
200 100
50 Hz
1000
400
500
1500
1000
1500
2000
2500
3000
ST083S Se rie s
Tra p e zoid a l p ulse
2000
2500
T
= 60°C
C
tp
d i/d t = 50A/µs
1E1
1E2
1E3
1E
4
1E1
1
1E2
1E3
1E4
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 12 - Frequency Characteristics
1E4
1E3
1E2
1E1
ST083S Se rie s
Tra p e zoid a l p ulse
= 85°C
Sn ub b e r c irc uit
Snub b e r c irc uit
R
= 22 o hm s
s
R
C
V
= 22 oh m s
= 0.15 µF
= 80% V
DRM
s
T
C
s
= 0.15 µF
s
C
tp
V
= 80% V
D
DRM
d i/d t = 100A/µs
D
50 Hz
100
200
400
500
50 Hz
1000
200
100
400
500
1500
1000
1500
2000
2500
3000
ST083S Se rie s
Tra p e zo id a l p ulse
2000
T
= 60°C
C
2500
tp
d i/d t = 100A/µs
1E1
1E2
1E3
1E
4
1
1
E1
1E2
1E3
1E4
Pulse Ba se w id th (µs)
Pulse Ba se wid th (µs)
Fig. 13 - Frequency Characteristics
8
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ST083S Series
Bulletin I25185 rev. B 03/94
1E4
1E3
1E2
1E1
ST083S Se rie s
Re c ta n gula r p ulse
20 jo ule s p e r p ulse
d i/d t = 50A/µs
tp
10
5
20 joule s p e r p u lse
7.5
3
2
1
4
0.5
2
0.3
1
0.2
0.1
0.5
0.3
0.2
0.1
ST083S Se rie s
Sinusoid a l p ulse
tp
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Ba se wid th (µs)
Pulse Ba se wid th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Re c ta n gula r g a te p ulse
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3m s
a ) Re c om me nd e d loa d line fo r
ra te d d i/ d t : 20V, 10ohms; tr<=1 µs
b ) Re c omm e nd e d lo a d lin e for
<=30% ra te d d i/ dt : 10V, 10o hms
tr<=1 µs
(a )
(b )
(2) (3) (4)
(1)
VGD
IGD
De vic e : ST083S Se rie s
Fre q ue nc y Lim ite d by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Insta nta ne ous Ga te Curre n t (A)
Fig. 15 - Gate Characteristics
9
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