ST083S08PFN1 [INFINEON]
INVERTER GRADE THYRISTORS; 逆变器GRADE闸流体
| 型号： | ST083S08PFN1 |
| 厂家： | 
Infineon |
| 描述： | INVERTER GRADE THYRISTORS |
| 文件： | 总9页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25185 rev. C 03/03
ST083S SERIES
Stud Version
INVERTER GRADE THYRISTORS
Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
85A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST083S
85
Units
A
@ TC
85
135
°C
A
IT(RMS)
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2450
A
2560
A
I2t
30
KA2s
KA2s
V
27
VDRM/VRRM
400 to 1200
10 to 20
- 40 to 125
case style
TO-209AC (TO-94)
t
range (see table)
µs
q
TJ
°C
www.irf.com
1
ST083S Series
Bulletin I25185 rev. C 03/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST083S
repetitive peak voltage
non-repetitive peak voltage
V
V
04
08
10
12
400
500
800
900
30
1000
1200
1100
1300
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
180oel
100µs
2540
1190
630
250
50
50Hz
400Hz
210
200
120
120
330
350
270
210
1930
810
1000Hz
150
70
80
25
50
320
220
50
190
85
400
100
50
A
V
2500Hz
RecoveryvoltageVr
Voltagebeforeturn-onVd
50
50
VDRM
VDRM
V DRM
Riseofon-statecurrentdi/dt
Case temperature
50
60
50
85
-
-
-
-
A/µs
60
85
60
85
°C
EquivalentvaluesforRCcircuit
22Ω / 0.15µF
22Ω / 0.15µF
22Ω / 0.15µF
On-state Conduction
Parameter
ST083S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
85
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
135
DC @ 77°C case temperature
ITSM
Max. peak, one half cycle,
non-repetitive surge current
2450
2560
2060
2160
30
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
A
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
27
KA2s
21
19
I2√t
Maximum I2√t for fusing
300
KA2√s t = 0.1 to 10ms, no voltage reapplied
www.irf.com
2
ST083S Series
Bulletin I25185 rev. C 03/03
On-state Conduction
Parameter
ST083S
2.15
Units Conditions
VTM
Max. peak on-state voltage
ITM= 300A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.46
1.52
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
r
Low level value of forward
slope resistance
1
t
2.32
2.34
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST083S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
A/µs
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.80
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs
Min Max
t
Max. turn-off time
10
20
V
R = 50V, t = 200µs, dv/dt = 200V/µs
q
p
Blocking
Parameter
ST083S
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max., linear to 80% VDRM, higher value
V/µs
available on request
IRRM
IDRM
Max. peak reverse and off-state
leakage current
30
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST083S
Units Conditions
PGM
40
5
W
A
TJ = TJ max, f = 50Hz, d% = 50
5
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
Thermal and Mechanical Specifications
Parameter
ST083S
-40 to 125
-40 to 150
Units
°C
Conditions
TJ
T
Max.junctionoperatingtemperaturerange
Max. storagetemperaturerange
stg
RthJC Max. thermalresistance, junctiontocase
RthCS Max. thermalresistance, casetoheatsink
0.195
0.08
DCoperation
K/W
Mounting surface, smooth, flat and greased
T
Mountingtorque,±10%
15.5
Nm
Non lubricated threads
Lubricated threads
(137)
(Ibf-in)
14
Nm
(120)
(Ibf-in)
wt
Approximateweight
Casestyle
130
g
TO-209AC(TO-94)
SeeOutlineTable
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.034
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 08
3
S
12
P
F
N
0
3
4
7
1
2
5
6
8
9
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
- P = Stud Base 1/2"-20UNF-2A threads
- Reapplied dv/dt code (for tq Test Condition)
- tq code
dv/dt - tq combinations available
dv/dt (V/µs)
200
t (µs)
q
up to 800V
10
20
FN
FK
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
t (µs)
q
only for
20
FK
1000/1200V
www.irf.com
4
ST083S Series
Bulletin I25185 rev. C 03/03
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
8.5 (0.33) DIA.
.
2.6 (0.10) MAX.
N
I
M
4.3 (0.17) DIA
)
7
3
.
0
(
5
.
9
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
1/2"-20UNF-2A
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
29.5 (1.16)
MAX.
130
120
110
100
90
130
ST083SSeries
ST083SSeries
(DC) = 0.195 K/W
R
(DC) = 0.195 K/W
R
thJC
thJC
120
110
100
90
Conduction Angle
Conduction Period
30°
60°
30°
90°
120°
60°
80
90°
120°
DC
180°
180°
80
70
0
10 20 30 40 50 60 70 80 90
0
20 40
60 80 100 120 140
Average On-state Current (A)
Average On-state Current (A)
Fig. 1-CurrentRatingsCharacteristics
Fig. 2-CurrentRatingsCharacteristics
5
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
180
t
h
180°
120°
90°
160
140
120
100
80
S
A
60°
30°
RMS Lim it
60
Conduction Angle
ST083SSeries
40
T = 125°C
20
J
0
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
9
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 3-On-statePowerLossCharacteristics
250
200
150
100
50
DC
180°
120°
90°
60°
30°
t
h
S
A
0
.
3
K
/
W
0
.
4
K
/
W
RMS Lim it
Conduction Period
ST083SSeries
T = 125°C
J
0
0
20 40 60 80 100 120
Average On-state Current (A)
1
4
0
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4-On-statePowerLossCharacteristics
2200
2000
1800
1600
1400
1200
1000
2600
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
2400
2200
2000
1800
1600
1400
1200
1000
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST083SSeries
ST083SSeries
0.01
0.1
Pulse Tra in Dura t ion (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig.6-MaximumNon-repetitiveSurgeCurrent
Fig.5-MaximumNon-repetitiveSurgeCurrent
www.irf.com
6
ST083S Series
Bulletin I25185 rev. C 03/03
1
10000
1000
100
St e a d y St a t e V a lu e
= 0.195 K/ W
R
thJC
(DC Operation)
T = 25 ° C
J
0.1
T = 125°C
J
ST083SSeries
ST083SSeries
0.01
0.001
0.01
0.1
1
10
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
InstantaneousOn-state Voltage (V)
Sq u a r e Wa v e Pu lse D u ra t io n ( s)
Fig. 8-ThermalImpedanceZthJC Characteristic
Fig. 7-On-stateVoltageDropCharacteristics
160
140
120
100
80
120
110
100
90
I
= 500 A
TM
I
= 500 A
TM
ST0 83S Se r ie s
T = 125 °C
300 A
200 A
100 A
J
300 A
200 A
100 A
80
70
50 A
60
50
60
40
50 A
ST083SSeries
30
T = 125 °C
40
J
20
20
10
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9-ReverseRecoveredChargeCharacteristics
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10-ReverseRecoveryCurrentCharacteristics
Sn u b b e r c irc u it
1E4
1E3
1E2
1E1
Snubber circuit
R
C
V
= 22 ohms
= 0.15 µF
= 80%V
R
C
V
= 22 o hm s
= 0.15 µF
= 80%V
s
s
s
s
D
D
DRM
DRM
100 50 Hz
200
400
1000 500
1500
50 Hz
200 100
400
1000
2000
2500
3000
500
1500
2000
2500
3000
ST0 8 3S Se r ie s
Sinusoidal pulse
ST0 83S Se r ie s
Sinusoidal pulse
T
= 85°C
tp
T
= 60°C
C
tp
C
1E1
1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth (µs)
Pulse Ba se w id t h ( µs)
Fig. 11-FrequencyCharacteristics
7
www.irf.com
ST083S Series
Bulletin I25185 rev. C 03/03
1E4
1E3
ST083S Se rie s
Trapezoidal pulse
Sn u b b e r c ir c u i t
Snubber circuit
R
C
V
= 22 o hm s
= 0.15 µF
= 80%V
R
C
V
= 22 o hm s
= 0.15 µF
= 80%V
DRM
s
s
T
= 85°C
C
s
s
tp
di/dt = 50A/µs
D
D
DRM
50 Hz
100
200
400
500
50 Hz
200 100
400
1000
500
1500
1000
1500
2000
2500
1E2
1E1
3000
ST083 S Se ri e s
Trapezoidal pulse
2000
2500
T
= 60°C
C
tp
di/dt = 50A/µs
1E1
1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth (µs)
Pulse Ba sew id th (µs)
Fig. 12-FrequencyCharacteristics
1E4
1E3
1E2
1E1
ST0 8 3S Se r ie s
Trapezoidal pulse
= 85 ° C
Snubber circuit
Snubber circuit
R
C
V
= 22 o hm s
= 0.15 µF
= 80%V
s
R
C
V
= 22 ohms
= 0.15 µF
= 80%V
s
T
s
s
C
tp
D
DRM
di/dt = 100A/µs
D
DRM
50 Hz
100
200
400
500
50 Hz
100
1000
200
400
500
1500
2000
1000
1500
2500
3000
ST0 83 S Se r ie s
Trapezoidal pulse
2000
2500
T
= 60°C
C
tp
di/ dt = 100A/ µs
1E1
1E2
1E3
1E1
4
1
1
E1
1E2
1E3
1E4
Pulse Ba sew id th (µs)
Pulse Ba se w id t h (µs)
Fig. 13-FrequencyCharacteristics
1E4
1E3
1E2
1E1
ST0 83S Se ri e s
Rectangular pulse
20 joulesper pulse
tp
di/dt = 50A/µs
10
5
20 joulesp er pulse
7.5
3
2
1
4
0.5
2
0.3
1
0.2
0.1
0.5
0.3
0.2
0.1
ST083SSeries
Sinusoidal pulse
tp
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba sew id t h (µs)
Pulse Ba sew id t h (µs)
Fig.14-MaximumOn-stateEnergyPowerLossCharacteristics
www.irf.com
8
ST083S Series
Bulletin I25185 rev. C 03/03
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2)
(3) (4)
(1)
VGD
IGD
Device: ST083SSeries
0.1
Frequency Limited by PG(AV)
10 100
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 15-GateCharacteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
9
www.irf.com
相关型号：
ST083S08PFN1LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFN1PBF
Silicon Controlled Rectifier, 135A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC, ROHS COMPLIANT, TO-94, 3 PIN
VISHAY
ST083S08PFN2L
Silicon Controlled Rectifier, 135A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PFP0LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFP1
Silicon Controlled Rectifier, 135A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PFP2L
Silicon Controlled Rectifier, 135A I(T)RMS, 85000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PFP2PBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-208AD
INFINEON
ST083S08PHK0
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
ST083S08PHK0LPBF
Silicon Controlled Rectifier, 135A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AC
INFINEON
©2020 ICPDF网 联系我们和版权申明