ST1000C24K3LPBF [INFINEON]
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| 型号： | ST1000C24K3LPBF |
| 厂家： | 
Infineon |
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Bulletin I25202 rev. A 01/00
ST1000C..K SERIES
Hockey Puk Version
PHASE CONTROL THYRISTORS
Features
1473A
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style A-24 (K-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST1000C..K
1473
Units
A
@ T
55
°C
hs
hs
IT(RMS)
2913
A
@ T
25
°C
ITSM
@50Hz
@60Hz
@50Hz
@60Hz
20.0
KA
KA
21.2
2
2
I t
2000
KA s
2
1865
KA s
2
2
I √t
20000
1200 to 2600
300
KA √s
VDRM/VRRM range
V
t
typical
range
µs
°C
q
TJ
-40to125
1
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ST1000C..K Series
Bulletin I25202 rev. A 01/00
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM , maximum repetitive
VRSM , maximum non-
IRRM max.
Type number
peak reverse voltage
V
repetitive peak rev. voltage
V
@ TJ = 125°C
mA
12
16
20
22
24
26
1200
1600
2000
2200
2400
2600
1300
1700
2100
2300
2500
2700
ST1000C..K
100
On-state Conduction
Parameter
ST1000C..K Units Conditions
IT(AV)
Maximum average on-state current
@ Heatsink temperature
IT(RMS) Maximum RMS on-state current
1473 (630)
55 (85)
6540
A
°C
A
180° conduction, half sine wave
Double side (single side) cooled
DC @ 25°C heatsink temp. double side cooled
ITSM
Maximum peak, one-cycle,
non-repetitive surge current
20.0
KA t = 10ms No voltage
t = 8.3ms reapplied
21.2
17.0
t = 10ms 100% VRRM
t = 8.3ms reapplied
18.1
Sinusoidal half wave,
I2t
Maximum I2t for fusing
2000
1865
1445
1360
20000
KA2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
0.950
1.024
0.283
0.265
1.80
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
t2
VTM
IH
V
Ipk = 3000A, TJ = 125°C, tp = 10ms sine pulse
600
mA TJ = 25°C, anode supply 12V resistive load
IL
Typical latching current
1000
2
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ST1000C..K Series
Bulletin I25202 rev. A 01/00
Switching
Parameter
ST1000C..K Units Conditions
di/dt
Maximum non repetitive rate of rise
of turned-on current
1000
A/µs Gate drive 20V, 20Ω, t < 1µs
r
TJ = TJ max., anode voltage < 80% VDRM
t
Typical delay time
1.9
µs
Gate current 1A, di /dt = 1A/µs
g
d
V
= 0.67% VDRM , TJ = 25°C
d
t
Typical turn-off time
300
A/µs ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
q
dv/dt = 20V/µs, Gate 0V 100Ω, t < 500µs
p
Blocking
Parameter
ST1000C..K Units Conditions
dv/dt
Maximum critical rate of rise of off-state
voltage
500
V/µs TJ = TJ max., linear to 80% rated VDRM
IRRM
IDRM
Maximum peak reverse and off-state
leakage current
100
µs
TJ = TJ max., rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum peak average gate power
IGM Maximum peak positive gate current
ST1000C..K Units Conditions
PGM
16
3
W
W
A
T = T max., t < 5ms
p
J J
TJ = TJ max., f = 50Hz, d% = 50
3.0
20
T = T max., t < 5ms
p
J
J
+ VGM Maximum peak positive gate voltage
- VGM Maximum peak negative gate voltage
V
5.0
V
IGT
DC gate current required to trigger
TYP.
200
100
50
MAX.
-
TJ
=
=
-40°C
25°C
200
mA TJ
Max. required gate trigger / current /
-
-
TJ = 125°C
voltage are the lowest value which
will trigger all units 12V anode-to-
cathode applied
VGT
DC gate voltage required to trigger
1.4
TJ
TJ
=
=
-40°C
25°C
1.1
3.0
-
V
0.9
TJ = 125°C
Max. gate current / voltage not to
trigger is the max. value which will
not trigger any units with rated VDRM
anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
0.25
mA TJ = TJ max.
V
VGD
3
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ST1000C..K Series
Bulletin I25202 rev. A 01/00
Thermal and Mechanical Specifications
Parameter
ST1000C..K Units Conditions
TJ
T
Max. junctionoperatingtemperaturerange
Max. storage temperature range
- 40 to 125
-40to150
°C
stg
RthJ-hs Max. thermal resistance, junction to
0.042
0.021
0.006
0.003
K/W DC operation single side cooled
DC operation double side cooled
heatsink
RthC-hs Max. thermal resistance, case to
heatsink
K/W DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
24500
(2500)
N
(Kg)
wt
Approximate weight
Case style
425
g
A-24(K-PUK)
See outline table
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sinusoidal conduction
Rectangular conduction
Conduction angle
Units Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.003
0.004
0.005
0.003
0.004
0.005
0.002
0.004
0.005
0.002
0.004
0.005
K/W
TJ = TJ max.
60°
30°
0.007
0.012
0.007
0.012
0.007
0.012
0.007
0.012
Ordering Information Table
DeviceCode
ST 100
0
C
26
K
1
1
2
3
4
5
8
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
K = Puk Case A-24 (K-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST1000C..K Series
Bulletin I25202 rev. A 01/00
Outline Table
1 (0.04) MIN.
TWO PLACES
47.5 (1.87) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
130
120
110
100
90
130
120
110
100
90
ST1000C..K Series
(Single Side Cooled)
ST1000C..K Series
(Single Side Cooled)
R
(DC) = 0.042 K/W
R
(DC) = 0.042 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
30°
30°
60°
60°
90°
90°
120°
120°
80
80
180°
180°
D C
1000
70
70
0
100 200 300 400 500 600 700
0
200
400
600 800
AverageOn-stateCurrent(A)
Fig. 2 - Current Ratings Characteristics
AverageOn-stateCurrent(A)
Fig. 1 - Current Ratings Characteristics
5
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ST1000C..KSeries
Bulletin I25202 rev. A 01/00
130
130
120
110
100
90
ST1000C..K Series
(Double Side Cooled)
ST1000C..K Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.021 K/W
R
(DC) = 0.021 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
30˚
80
30˚
60˚
60˚
90˚
70
70
90˚
120˚
120˚
180˚
60
60
180˚
50
DC
50
40
40
0
400 800 1200 1600 2000 2400
0
400
800
1200
1600
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
3000
2500
2000
1500
1000
500
4000
3500
3000
2500
2000
1500
1000
500
DC
180˚
120˚
90˚
60˚
30˚
180˚
120˚
90˚
60˚
RMS Limit
30˚
RMS Limit
Conduction Period
Conduction Angle
ST1000C..K Series
ST1000C..K Series
T = 125˚C
J
T = 125˚C
J
0
0
0
500 1000 1500 2000 2500
0
400
800
1200
1600
Average On-state Current (A)
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
18000
16000
14000
12000
10000
8000
22000
20000
18000
16000
14000
12000
10000
8000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 125˚C
J
Initial T = 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
ST1000C..K Series
ST1000C..K Series
6000
6000
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST1000C..K Series
Bulletin I25202 rev. A 01/00
10000
1000
100
T = 25˚C
J
T = 125˚C
J
ST1000C..K Series
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0.1
0.01
Steady State Value
= 0.42 K/W
R
thJ-hs
(Single Side Cooled)
= 0.21 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST1000C..K Series
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
10
100
100
10
1
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(a)
(b)
(2) (3)
(1)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST100C..K Series
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
7
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