ST103S [INFINEON]

INVERTER GRADE THYRISTORS Stud Version; 逆变器GRADE闸流体梭哈版本


型号：	ST103S
厂家：	Infineon
描述：	INVERTER GRADE THYRISTORS Stud Version 逆变器GRADE闸流体梭哈版本
文件：	总10页 (文件大小：322K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Previous Datasheet

Index

Next Data Sheet

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

D-440

To Order

Previous Datasheet

Index

Next Data Sheet

Bulletin I25183/B

ST103S SERIES

Stud Version

INVERTER GRADE THYRISTORS

Features

105A

All diffused design

Center amplifying gate

Guaranteed high dv/dt

Guaranteed high di/dt

High surge current capability

Low thermal impedance

High speed performance

Typical Applications

Inverters

Choppers

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST103S

105

Units

°C

@ T_C

165

I_T(RMS)

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

3000

3150

I²t

KA²s

_DRM/V_RRM

range

400 to 800

10 to 25

- 40 to 125

case style

TO-209AC (TO-94)

µs

T_J

°C

D-441

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

V_DRM/V_RRM, maximum

V_RSM, maximum

I_DRM/I_RRMmax.

Type number

ST103S

Code

repetitive peak voltage

non-repetitive peak voltage

@ T_J= T_Jmax.

400

800

500

900

Current Carrying Capability

I_TM

Frequency

Units

180^oel

100µs

4730

2500

1530

840

180^oel

50Hz

400Hz

280

310

180

200

440

470

330

300

3630

1850

1000Hz

320

340

200

210

480

490

310

320

1090

580

2500Hz

Recovery voltage Vr

Voltagebeforeturn-onVd

V_DRM

Rise of on-state current di/dt

Case temperature

A/µs

°C

EquivalentvaluesforRCcircuit

22Ω / 0.15µF

On-state Conduction

Parameter

ST103S

Units Conditions

I_T(AV)Max. average on-state current

@ Case temperature

105

180° conduction, half sine wave

°C

I_T(RMS)Max. RMS on-state current

165

DC @ 76°C case temperature

I_TSM

Max. peak, one half cycle,

non-repetitive surge current

3000

3150

2530

2650

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

No voltage

reapplied

100% V_RRM

reapplied

No voltage

reapplied

100% V_RRM

reapplied

Sinusoidal half wave,

Initial T_J= T_Jmax

I²t

Maximum I²t for fusing

KA²s

I²√t

Maximum I²√t for fusing

450

KA²√s t = 0.1 to 10ms, no voltage reapplied

D-442

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - On-state Power Loss Characteristics

Fig. 4 - On-state Power Loss Characteristics

D-446

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

Fig. 5 - Maximum Non-repetitive Surge Current

Fig. 6 - Maximum Non-repetitive Surge Current

Fig. 8 - Thermal Impedance Z_thJCCharacteristic

Fig. 10 - Reverse Recovery Current Characteristics

Fig. 7 - On-state Voltage Drop Characteristics

Fig. 9 - Reverse Recovered Charge Characteristics

D-447

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

Fig. 11 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

Fig. 13 - Frequency Characteristics

D-448

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

D-449

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

On-state Conduction

Parameter

ST103S

Units Conditions

V_TM

Max. peak on-state voltage

1.73

1.32

I_TM= 300A, T_J= T_Jmax, t = 10ms sine wave pulse

V_T(TO)1Low level value of threshold

voltage

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

V_T(TO)2High level value of threshold

voltage

1.35

(I > x π x I_T(AV)), T_J= T_Jmax.

Low level value of forward

slope resistance

1.40

1.30

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

(I > x π x I_T(AV)), T_J= T_Jmax.

mΩ

High level value of forward

slope resistance

I_H

I_L

Maximum holding current

600

T_J= 25°C, I_T> 30A

Typical latching current

1000

T_J= 25°C, V_A= 12V, Ra = 6Ω, I_G= 1A

Switching

Parameter

ST103S

1000

Units Conditions

di/dt

Max. non-repetitive rate of rise

of turned-on current

T_J= T_Jmax, V_DRM= rated V_DRM

A/µs

I_TM= 2 x di/dt

T_J= 25°C, V_DM= rated V_DRM, I_TM= 50A DC, t = 1µs

Typical delay time

0.80

Resistive load, Gate pulse: 10V, 5Ω source

µs

Min Max

T_J= T_Jmax, I_TM= 100A, commutating di/dt = 10A/µs

Max. turn-off time

V_R= 50V, t = 200µs, dv/dt: see table in device code

Blocking

Parameter

ST103S

500

Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

T_J= T_Jmax., linear to 80% V_DRM, higher value

V/µs

available on request

I_RRM

I_DRM

Max. peak reverse and off-state

leakage current

T_J= T_Jmax, rated V_DRM/V_RRMapplied

Triggering

Parameter

Maximum peak gate power

P_G(AV)Maximum average gate power

I_GMMax. peak positive gate current

ST103S

Units Conditions

P_GM

T_J= T_Jmax, f = 50Hz, d% = 50

T_J= T_Jmax, t ≤ 5ms

+V_GMMaximum peak positive

gate voltage

T_J= T_Jmax, t ≤ 5ms

-V_GMMaximum peak negative

gate voltage

I_GT

Max. DC gate current required

to trigger

200

T_J= 25°C, V_A= 12V, Ra = 6Ω

V_GT

Max. DC gate voltage required

to trigger

I_GD

Max DC gate current not to trigger

T_J= T_Jmax, rated V_DRMapplied

V_GD

Max. DC gate voltage not to trigger

0.25

D-443

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

Thermal and Mechanical Specifications

Parameter

ST103S

Units

°C

Conditions

T_J

Max. junction operating temperature range -40 to 125

Max. storage temperature range

-40 to 150

0.195

stg

R_thJCMax. thermal resistance, junction to case

R_thCSMax. thermal resistance, case to heatsink

DC operation

K/W

0.08

Mounting surface, smooth, flat and greased

Mounting torque, ± 10%

15.5

Non lubricated threads

(137)

(Ibf-in)

Lubricated threads

SeeOutlineTable

(120)

(Ibf-in)

Approximate weight

Case style

130

TO-209AC (TO-94)

∆R_thJCConduction

(The following table shows the increment of thermal resistence R_thJCwhen devices operate at different conduction angles than DC)

Conduction angle Sinusoidal conduction Rectangular conduction Units

Conditions

180°

120°

90°

0.034

0.040

0.052

0.076

0.126

0.025

0.042

0.056

0.079

0.127

K/W

T_J= T_Jmax.

60°

30°

Ordering Information Table

Device Code

ST 10

Thyristor

Essential part number

3 = Fast turn off

S = Compression bonding Stud

Voltage code: Code x 100 = V_RRM(See Voltage Ratings table)

P = Stud Base 1/2" 20UNF

dv/dt - t_qcombinations available

Reapplied dv/dt code (for t test condition)

code

dv/dt (V/µs) 20

100

200

400

FN *

FL * HL

0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)

2 = Flag terminals (For Cathode and Gate Terminals)

Critical dv/dt:

t (µs)

None = 500V/µsec (Standard value)

*Standard part number.

All other types available only on request.

= 1000V/µsec (Special selection)

D-444

To Order

Previous Datasheet

Index

Next Data Sheet

ST103S Series

Outline Table

CERAMIC HOUSING

16.5 (0.65) MAX.

8.5 (0.33) DIA.

2.6 (0.10) MAX.

4.3 (0.17) DIA

)

(

FLEXIBLE LEAD

C.S. 16mm

(.025 s.i.)

RED SILICON RUBBER

C.S. 0.4 mm

(.0006 s.i.)

Fast-on Terminals

RED CATHODE

AMP. 280000-1

REF-250

WHITE GATE

215 (8.46)

10 (0.39)

RED SHRINK

WHITE SHRINK

22.5 (0.88) MAX. DIA.

SW 27

1/2"-20UNF-2A

Case Style TO-209AC (TO-94)

All dimensions in millimeters (inches)

29.5 (1.16)

MAX.

CERAMIC HOUSING

FLAG TERMINALS

22.5 DIA.

5.2 (0.20) DIA.

(0.89) MAX.

1.5 (0.06) DIA.

7.5

(0.30)

Case Style TO-208AD (TO-83)

All dimensions in millimeters (inches)

1/2"-20UNF-2A

2.4 (0.09)

29.5 (1.16)

D-445

To Order

ST103S [INFINEON]

相关型号：

ST103S02MFL0

ST103S02MFL0PBF

ST103S02MFM0

ST103S02MFM0PBF

ST103S02MFN0PBF

ST103S02PFK0

ST103S02PFK0PBF

ST103S02PFK1PBF

ST103S02PFL0

ST103S02PFM0

ST103S02PFM1PBF

ST103S02PFN0PBF