ST110S08P1 [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | ST110S08P1 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总8页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25167 rev. C 03/03
ST110S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
Center gate
Hermetic metal case with ceramic insulator
(Glass-metal seal over 1200V)
110A
International standard case TO-209AC (TO-94)
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
ST110S
110
Units
A
@ TC
90
°C
IT(RMS)
ITSM
175
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2700
2830
36.4
33.2
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 1600
100
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 125
°C
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1
ST110S Series
Bulletin I25167 rev. C 03/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number Code
peak and off-state voltage
V
repetitive peak voltage
V
@ TJ = TJ max
mA
04
400
500
ST110S
08
12
16
800
900
20
1200
1600
1300
1700
On-state Conduction
Parameter
ST110S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
110
90
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
175
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
A
DC @ 85°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
KA2s
100% VRRM
reapplied
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0.90
0.92
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
1.79
1.81
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.52
600
V
I = 350A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST110S
500
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
2.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
t
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST110S Series
Bulletin I25167 rev. C 03/03
Blocking
Parameter
ST110S
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
20
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST110S
Units Conditions
PGM
5
1
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
2.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
IGT
DC gate current required
to trigger
TJ = - 40°C
TJ = 25°C
180
90
-
150
-
mA
V
Max. required gate trigger/ cur-
40
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT
DC gate voltage required
to trigger
2.9
1.8
1.2
-
3.0
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST110S
-40 to 125
Units Conditions
°C
TJ
T
Max.operatingtemperaturerange
Max. storagetemperaturerange
-40 to 150
stg
RthJC Max. thermalresistance,
0.195
DC operation
K/W
junction to case
RthCS Max. thermalresistance,
0.08
Mounting surface, smooth, flat and greased
Non lubricated threads
case to heatsink
T
Mountingtorque, ±10%
15.5
(137)
14
Nm
(lbf-in)
Lubricated threads
SeeOutlineTable
(120)
130
wt
Approximateweight
Casestyle
g
TO-209AC(TO-94)
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3
ST110S Series
Bulletin I25167 rev. C 03/03
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.035
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 11
0
S
16
P
0
V
1
2
7
8
5
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
P = Stud base 1/2"-20UNF-2A threads
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
V = Glass-metal seal (only up to 1200V)
8
-
None = Ceramic housing (over 1200V)
4
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ST110S Series
Bulletin I25167 rev. C 03/03
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.33) DIA.
.
2.6 (0.10) MAX.
N
I
M
)
7
3
4.3 (0.17) DIA
.
0
(
5
.
.
9
N
I
M
)
9
FLEXIBLE LEAD
7
.
0
(
2
0
2
C.S. 16mm
(.025 s.i.)
2
C.S. 0.4 mm
(.0006 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46) 10 (0.39)
WHITE SHRINK
23.5 (0.93) MAX. DIA.
RED SHRINK
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
CERAMIC HOUSING
16.5 (0.65) MAX.
8.5 (0.33) DIA.
.
2.6 (0.10) MAX.
N
I
M
4.3 (0.17) DIA
)
7
3
.
0
(
.
N
5
.
I
9
M
)
9
7
FLEXIBLE LEAD
.
0
(
0
2
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
1/2"-20UNF-2A
29.5 (1.16)
MAX.
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5
ST110S Series
Bulletin I25167 rev. C 03/03
130
130
120
110
100
90
ST110SSeries
ST110SSeries
(DC) = 1.95 K/W
R
(DC) = 0.195 K/ W
R
thJC
thJC
120
110
100
90
Conduction Period
Conduction Angle
30°
60°
30°
90°
120°
60°
60
90°
120°
180°
DC
180°
80
80
0
20
40
80
100 120
0
20 40 60 80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
R
180°
120°
90°
60°
0
.
3
K
140
/
=
0
.
W
0
.
1
5
K
K
/
120
/
W
0
W
.
6
30°
K
-
/
D
W
e
100
l
t
0
RM S Lim it
a
.
8
K
R
/
W
1
80
60
K
/
W
Conduction Angle
40
20
0
ST110SSeries
T = 125°C
J
0
20
40
60
80
100
1
2
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
220
200
180
160
140
120
100
80
R
DC
180°
120°
90°
60°
30°
t
h
S
A
=
0
.
1
K/
W
-
0
D
e
.
4
K
l
/
t
W
a
R
RM S Lim it
Conduction Period
ST110SSeries
60
40
T = 125°C
20
J
0
0
20 40 60 80 100 120 140 160 1
8
0
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST110S Series
Bulletin I25167 rev. C 03/03
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
2400
2200
2000
1800
1600
1400
1200
1000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST110 S Se rie s
ST110SSeries
0.1
1
10
100
0.01
1
10
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1000
100
Tj = 25˚C
Tj = 125˚C
ST110S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.195 K/W
R
thJC
(DC Operation)
0.01
0.001
ST110SSeries
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
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7
ST110S Series
Bulletin I25167 rev. C 03/03
100
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(a)
10
1
(b)
(3)
(1) (2)
(4)
VGD
IGD
Frequency Limited by PG(AV)
10 100
Device: ST110SSeries
0.1
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 9 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
8
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