ST110S12P1VL [INFINEON]
Silicon Controlled Rectifier, 175A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC;
| 型号： | ST110S12P1VL |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 175A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AC 栅 栅极 |
| 文件： | 总9页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25167 rev. B 01/94
ST110S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
110A
Center gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
ST110S
110
Units
A
@ TC
90
°C
IT(RMS)
ITSM
175
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
2700
2830
36.4
33.2
A
A
I2t
KA2s
KA2s
V
DRM/VRRM
400 to 1600
100
V
case style
t
typical
µs
q
TO-209AC (TO-94)
TJ
- 40 to 125
°C
1
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ST110S Series
Bulletin I25167 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
ST110S
peak and off-state voltage
V
repetitive peak voltage
V
@ TJ = TJ max
mA
04
08
12
14
16
400
800
500
900
1200
1400
1600
1300
1500
1700
20
On-state Conduction
Parameter
ST110S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
110
90
A
°C
A
180° conduction, half sine wave
IT(RMS) Max. RMS on-state current
175
DC @ 85°C case temperature
ITSM
Max. peak, one-cycle
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
I2√t
Maximum I2√t for fusing
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
0.90
0.92
1.79
1.81
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
slope resistance
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.52
600
V
I = 350A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Typical latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST110S
500
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
2.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST110S Series
Bulletin I25167 rev. B 01/94
Blocking
Parameter
ST110S
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
20
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST110S
Units Conditions
PGM
5
1
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
2.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
IGT
DC gate current required
to trigger
TJ = - 40°C
180
90
-
150
-
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
40
VGT
DC gate voltage required
to trigger
TJ = - 40°C
2.9
1.8
1.2
-
3.0
-
V
TJ = 25°C
J = 125°C
T
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST110S
-40 to 125
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 150
stg
RthJC Max. thermal resistance,
junction to case
0.195
DC operation
K/W
RthCS Max. thermal resistance,
0.08
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
15.5
(137)
14
Non lubricated threads
Nm
(lbf-in)
Lubricated threads
See Outline Table
(120)
130
wt
Approximate weight
Case style
g
TO - 209AC (TO-94)
3
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ST110S Series
Bulletin I25167 rev. B 01/94
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.035
0.041
0.052
0.076
0.126
0.025
0.042
0.056
0.079
0.127
K/W
60°
30°
Ordering Information Table
Device Code
ST 11
0
S
16
P
0
V
1
2
7
3
5
6
8
9
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
P = Stud base 20UNF threads
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
V = Glass-metal seal (only up to 1200V)
8
9
-
-
None = Ceramic housing (over 1200V)
Critical dv/dt: None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST110S Series
Bulletin I25167 rev. B 01/94
Outline Table
GLASS METAL SEAL
16.5 (0.65) MAX.
8.5 (0.33) DIA.
2.6 (0.10) MAX.
4.3 (0.17) DIA
FLEXIBLE LEAD
2
C.S. 16mm
(.025 s.i.)
2
C.S. 0.4 mm
(.0006 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE GATE
215 (8.46) 10 (0.39)
WHITE SHRINK
23.5 (0.93) MAX. DIA.
RED SHRINK
SW 27
1/2"-20UNF-2A
29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
CERAMIC HOUSING
16.5 (0.65) MAX.
8.5 (0.33) DIA.
.
2.6 (0.10) MAX.
N
I
M
4.3 (0.17) DIA
)
7
3
.
0
(
.
5
.
N
I
9
M
)
9
FLEXIBLE LEAD
7
.
0
(
0
2
2
C.S. 16mm
(.025 s.i.)
2
RED SILICON RUBBER
RED CATHODE
C.S. 0.4 mm
(.0006 s.i.)
WHITE GATE
215 (8.46)
10 (0.39)
RED SHRINK
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
1/2"-20UNF-2A
29.5 (1.16)
MAX.
5
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ST110S Series
Bulletin I25167 rev. B 01/94
Outline Table
GLASS-METAL SEAL
FLAG TERMINALS
23.5 DIA.
5.2 (0.20) DIA.
(0.93) MAX.
1.5 (0.06) DIA.
7.5
(0.30)
1/2"-20UNF-2A
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
2.4 (0.09)
29.5 (1.16)
CERAMIC HOUSING
FLAG TERMINALS
22.5 DIA.
5.2 (0.20) DIA.
(0.89) MAX.
1.5 (0.06) DIA.
7.5
(0.30)
1/2"-20UNF-2A
2.4 (0.09)
29.5 (1.16)
6
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ST110S Series
Bulletin I25167 rev. B 01/94
130
120
110
100
90
130
120
110
100
90
ST110S Se rie s
ST110S Se rie s
(DC ) = 0.195 K/ W
R
(DC ) = 1.95 K/ W
R
thJC
thJC
C on d uc tio n Pe riod
C on d uc tio n An g le
30°
60°
30°
90°
120°
60°
90°
120°
180°
DC
180°
80
80
0
20
40
60
80
100
120
0
20 40 60 80 100 120 140 160 180
Ave ra g e O n-sta te C urre n t (A)
Ave ra g e O n-sta te Curre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
160
180°
120°
90°
0
0
.
2
.
3
K
K
/
140
/
W
W
60°
30°
120
0
.
6
K
/
W
100
0
1
RMS Lim it
.
8
K/
W
80
60
K
/
W
1
.
2
K
/
W
C o nd uctio n Ang le
40
20
0
ST110S Se rie s
T
= 125°C
J
0
20
40
60
80
100
1
2
0
50
75
100
125
Ave ra g e On -sta te C urre nt (A)
Ma ximum Allo wa b le Am b ie n t Te m p e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
220
200
180
160
140
120
100
80
DC
180°
120°
90°
60°
30°
t
h
S
A
0
.
3
K
/
W
0
0
.
6
K
/
W
W
RMS Lim it
.
8
K
/
1
K
/
W
C o nd uc tio n Pe rio d
60
40
ST110S Se rie s
T
= 125°C
20
J
0
0
20 40 60 80 100 120 140 160 1
8
0
50
75
100
125
Ave ra g e O n-sta te C urre nt (A)
Ma ximum Allo wa b le Amb ie n t Te mp e ra ture (°C )
Fig. 4 - On-state Power Loss Characteristics
7
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ST110S Series
Bulletin I25167 rev. B 01/94
2400
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
At Any Ra te d Lo a d C o nd itio n An d With
Ma xim um Non Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tion . C on trol
Of C on d uc tion Ma y No t Be Ma inta in e d .
Ra te d V
Ap p lie d Fo llow ing Surg e .
RRM
2200
2000
1800
1600
1400
1200
1000
In itia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
ST110S Se rie s
ST110S Se rie s
1
10
100
0.01
0.1
1
10
Nu mb e r Of Eq ua l Amp litud e Ha lf C yc le C urrent Pulses (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
1000
100
10
T = 125°C
J
ST110S Se rie s
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
In sta nta ne ous O n-sta te Volta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue
= 0.195 K/ W
R
thJC
(DC Op e ra tio n)
0.1
0.01
0.001
ST110S Se rie s
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
8
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ST110S Series
Bulletin I25167 rev. B 01/94
100
10
Re c ta ng ula r g a te p ulse
(1) PGM = 10W, tp = 4m s
a ) Re c o mm e nd e d lo a d line fo r
ra te d d i/d t : 20V, 10ohm s; tr<=1 µs
b) Re c o mm e nd e d loa d line for
<=30% ra te d d i/ d t : 10V, 10ohm s
tr<=1 µs
(2) PGM = 20W, tp = 2m s
(3) PGM = 40W, tp = 1m s
(4) PGM = 60W, tp = 0.66ms
(a )
(b )
1
(1) (2) (3) (4)
VGD
IG D
Fre que nc y Lim ite d b y PG (AV)
De vic e : ST110S Se rie s
0.1
0.1
0.001
0.01
1
10
100
Insta nta n e ous Ga te Curre n t (A)
Fig. 9 - Gate Characteristics
9
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