ST1200C12K1LPBF [INFINEON]

Silicon Controlled Rectifier, 3080A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, KPUK-2;


型号：	ST1200C12K1LPBF
厂家：	Infineon
描述：	Silicon Controlled Rectifier, 3080A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, KPUK-2 栅栅极
文件：	总7页 (文件大小：87K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I25196 rev. B 01/00

ST1200C..K SERIES

PHASE CONTROL THYRISTORS

Hockey Puk Version

Features

1650A

Center amplifying gate

Metal case with ceramic insulator

International standard case A-24 (K-PUK)

High profile hockey-puk

TypicalApplications

DC motor controls

Controlled DC power supplies

AC controllers

case style A-24 (K-PUK)

Major Ratings and Characteristics

Parameters

I_T(AV)

ST1200C..K

1650

Units

@ T

°C

I_T(RMS)

3080

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

30500

32000

4651

I²t

KA²s

4250

V_DRM/V_RRM

1200 to 2000

200

typical

µs

T_J

- 40 to 125

°C

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ST1200C..K Series

Bulletin I25196 rev.B 01/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

Code

V_DRM/V_RRM, max. repetitive

V_RSM, maximum non-

I_DRM/I_RRMmax.

@ T_J= T_Jmax

Type number

peak and off-state voltage

repetitive peak voltage

1200

1400

1600

1800

2000

1300

1500

1700

1900

2100

ST1200C..K

100

On-state Conduction

Parameter

ST1200C..K

Units Conditions

I_T(AV)Max. average on-state current

@ Heatsink temperature

1650 (700)

55 (85)

3080

180° conduction, half sine wave

°C

double side (single side) cooled

I_T(RMS)Max. RMS on-state current

DC @ 25°C heatsink temperature double side cooled

t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% V_RRM

t = 8.3ms reapplied

t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% V_RRM

t = 8.3ms reapplied

I_TSM

Max. peak, one-cycle

30500

32000

25700

26900

4651

non-repetitive surge current

Sinusoidal half wave,

Initial T_J= T_Jmax.

I²t

Maximum I²t for fusing

4250

KA²s

3300

3000

I²√t

Maximum I²√t for fusing

46510

KA²√s t = 0.1 to 10ms, no voltage reapplied

V_T(TO)Low level value of threshold

0.91

1.01

0.21

0.19

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

voltage

V_T(TO)High level value of threshold

(I > π x I_T(AV)),T_J= T_Jmax.

voltage

r_t1

Low level value of on-state

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

slope resistance

mΩ

r_t2

High level value of on-state

slope resistance

(I > π x I_T(AV)),T_J= T_Jmax.

V_TM

I_H

Max. on-state voltage

1.73

600

I = 4000A, T_J= T_Jmax, t = 10ms sine pulse

pk p

Maximum holding current

Typical latching current

T_J= 25°C, anode supply 12V resistive load

I_L

1000

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ST1200C..K Series

Bulletin I25196 rev.B 01/00

Switching

Parameter

ST1200C..K

1000

Units Conditions

A/µs

di/dt

Max. non-repetitive rate of rise

of turned-on current

Gate drive 20V, 20Ω, t ≤ 1µs

T_J= T_Jmax, anode voltage ≤ 80% V_DRM

Gate current 1A, di /dt = 1A/µs

Typical delay time

1.9

= 0.67% V_DRM, T_J= 25°C

µs

I_TM= 550A, T_J= T_Jmax, di/dt = 40A/µs, V_R= 50V

Typical turn-off time

200

dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs

Blocking

Parameter

ST1200C..K

500

Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

V/µs T_J= T_Jmax. linear to 80% rated V_DRM

I_RRM

I_DRM

Max. peak reverse and off-state

leakage current

100

T_J= T_Jmax, rated V_DRM/V_RRMapplied

Triggering

Parameter

Maximum peak gate power

P_G(AV)Maximum average gate power

I_GMMax. peak positive gate current

ST1200C..K

Units Conditions

P_GM

T_J= T_Jmax, t ≤ 5ms

T_J= T_Jmax, f = 50Hz, d% = 50

3.0

T_J= T_Jmax, t ≤ 5ms

+V_GMMaximum peak positive

gate voltage

T_J= T_Jmax, t ≤ 5ms

-V_GMMaximum peak negative

gate voltage

5.0

TYP.

200

MAX.

T_J= - 40°C

I_GT

DC gate current required

to trigger

100

200

mA T_J= 25°C

Max. required gate trigger/ cur-

rent/ voltage are the lowest value

which will trigger all units 12V

anode-to-cathode applied

T_J= 125°C

T_J= - 40°C

1.4

1.1

0.9

V_GT

DC gate voltage required

to trigger

3.0

T_J

= 25°C

_J= 125°C

Max. gate current/voltage not to

trigger is the max. value which

will not trigger any unit with rated

V_DRManode-to-cathode applied

I_GD

DC gate current not to trigger

DC gate voltage not to trigger

0.25

T_J= T_Jmax

V_GD

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ST1200C..K Series

Bulletin I25196 rev.B 01/00

Thermal and Mechanical Specification

Parameter

ST1200C..K

Units Conditions

T_J

Max. operating temperature range

Max. storage temperature range

-40 to 125

-40 to 150

°C

stg

R_thJ-hsMax. thermal resistance,

junction to heatsink

0.042

0.021

DC operation single side cooled

K/W

DC operation double side cooled

R_thC-hsMax. thermal resistance,

case to heatsink

0.006

0.003

24500

(2500)

425

DC operation single side cooled

DC operation double side cooled

Mounting force, 10%

(Kg)

Approximate weight

Case style

A-24 (K-PUK)

See Outline Table

∆R_thJ-hsConduction

(The following table shows the increment of thermal resistence R_thJ-hswhen devices operate at different conduction angles than DC)

Sinusoidal conduction Rectangular conduction

Conduction angle

Units

K/W

Conditions

T_J= T_Jmax.

Single Side Double Side Single Side Double Side

180°

120°

90°

0.003

0.004

0.005

0.007

0.012

0.003

0.004

0.005

0.007

0.012

0.002

0.004

0.005

0.007

0.012

0.002

0.004

0.005

0.007

0.012

60°

30°

Ordering Information Table

Device Code

ST 120

Thyristor

Essential part number

0 = Converter grade

C = Ceramic Puk

Voltage code: Code x 100 = V_RRM(See Voltage Rating Table)

K = Puk Case A-24 (K-PUK)

0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)

2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)

3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

Critical dv/dt: None = 500V/µsec (Standard selection)

= 1000V/µsec (Special selection)

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ST1200C..K Series

Bulletin I25196 rev.B 01/00

Outline Table

1 (0.04) MIN.

TWO PLACES

47.5 (1.87) DIA. MAX.

TWO PLACES

PIN RECEPTACLE

AMP. 60598-1

67 (2.6) DIA. MAX.

20° 5°

4.75 (0.2) NOM.

44 (1.73)

Case Style A-24 (K-PUK)

All dimensions in millimeters (inches)

2 HOLES DIA. 3.5 (0.14) x

2.1 (0.1) DEEP

Quote between upper and lower

pole pieces has to be considered

after application of Mounting Force

(see Thermal and Mechanical

Specification)

CREPAGE DESTANCE 28.88 (1.137) MIN.

STRIKE DISTANCE 17.99 (0.708) MIN.

130

120

110

100

130

120

110

100

ST1200C..K Series

(Single Side Cooled)

ST1200C..K Series

(Single Side Cooled)

(DC) = 0.042 K/W

thJ-hs

Conduction Period

Conduction Angle

30°

60°

30°

90°

60°

120°

180°

90°

120°

180°

D C

200 400 600 800 1000 1200

AverageOn-stateCurrent (A)

400

800

1200 1600 2000

AverageOn-stateCurrent (A)

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

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ST1200C..K Series

Bulletin I25196 rev. B 01/00

130

120

110

100

ST1200C..K Series

(Double Side Cooled)

ST1200C..K Series

(Double Side Cooled)

120

110

100

(DC) = 0.021 K/W

thJ-hs

Conduction Period

Conduction Angle

30°

60°

30°

90°

120°

60°

90°

120°

180°

D C

400

800

1200 1600 2000

600 1200 1800 2400 3000 3600

AverageOn-stateCurrent(A)

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

4000

3500

3000

2500

2000

1500

1000

500

5000

4000

3000

2000

1000

180°

120°

90°

60°

30°

D C

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Conduction Angle

ST1200C..K Series

= 125°C

400

800

1200 1600 2000

600 1200 1800 2400 3000 3600

AverageOn-stateCurrent(A)

Fig. 5- On-state Power Loss Characteristics

Fig. 6- On-state Power Loss Characteristics

28000

26000

24000

22000

20000

32000

30000

28000

26000

24000

22000

20000

18000

16000

14000

12000

At Any Rated Load Condition And With

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

Rated V

Applied Following Surge.

R R M

Initial T = 125°C

60 Hz 0.0083

50 Hz 0.0100

No Voltage Reapplied

Rated V

Reapplied

R R M

18000

16000

14000

12000

ST1200C..K Series

0.1

100

0.01

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Pulse Train Duration (s)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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ST1200C..K Series

Bulletin I25196 rev. B 01/00

10000

1000

100

= 25°C

= 125°C

ST1200C..K Series

0.5

1.5

2.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-state Voltage Drop Characteristics

0.1

Steady State Value

= 0.042 K/W

thJ-hs

(Single Side Cooled)

= 0.021 K/W

thJ-hs

(Double Side Cooled)

0.01

(DC Operation)

ST1200C..K Series

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z_thJ-hsCharacteristics

100

Rectangular gate pulse

(1) PGM

(2) PGM

(3) PGM

10W, tp

20W, tp

40W, tp

4ms

2ms

1ms

a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30% rated di/dt

tr<=1 µs

: 10V, 10ohms

(a)

(b)

(1) (2) (3)

V G D

IG D

Device: ST1200C..K Series

0.1

Frequency Limited by PG(AV)

0.1

0.001

0.01

100

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

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相关型号：

ST1200C12K1P

Silicon Controlled Rectifier, 3080A I(T)RMS, 1650000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, METAL, CASE A-24, KPUK-2