ST1280C04K2L [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | ST1280C04K2L |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总7页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25195 rev. B 02/00
ST1280C..K SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
2310A
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style A-24 (K-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST1280C..K
2310
Units
A
@ T
55
°C
hs
IT(RMS)
4150
A
@ T
25
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
42500
44500
9027
A
A
I2t
KA2s
KA2s
8240
VDRM/VRRM
400 to 600
200
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST1280C..K Series
Bulletin I25195 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
ST1280C..K
peak and off-state voltage
repetitive peak voltage
V
V
04
06
400
600
500
700
100
On-state Conduction
Parameter
ST1280C..K
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
2310 (885)
55 (85)
4150
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
42500
44500
35700
37400
9027
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
8241
KA2s
6383
5828
I2√t
Maximum I2√t for fusing
90270
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.83
0.90
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
0.077
0.068
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.44
600
V
I = 8000A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Typical latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST1280C..K
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.9
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
I
TM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
Typical turn-off time
200
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST1280C..K Series
Bulletin I25195 rev. B 02/00
Blocking
Parameter
ST1280C..K
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
100
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST1280C..K
Units Conditions
PGM
16
3
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
200
MAX.
-
T
J = - 40°C
IGT
DC gate current required
to trigger
100
50
200
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
1.4
1.1
0.9
TJ = - 40°C
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ = 25°C
J = 125°C
T
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
0.25
mA
V
TJ = TJ max
VGD
Thermal and Mechanical Specification
Parameter
ST1280C..K
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.042
0.021
DC operation single side cooled
DC operation double side cooled
K/W
K/W
RthC-hs Max. thermal resistance,
case to heatsink
0.006
0.003
24500
(2500)
425
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
A-24 (K-PUK)
See Outline Table
3
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ST1280C..K Series
Bulletin I25195 rev. B 02/00
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.003
0.004
0.005
0.007
0.012
0.003
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
0.002
0.004
0.005
0.007
0.012
K/W
60°
30°
Ordering Information Table
Device Code
ST 128
0
C
06
K
1
7
8
1
2
3
5
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
K = Puk Case A-24(K-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST1280C..K Series
Bulletin I25195 rev. B 02/00
Outline Table
1 (0.04) MIN.
TWO PLACES
47.5 (1.87) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
67 (2.6) DIA. MAX.
20° 5°
4.75 (0.2) NOM.
44 (1.73)
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
130
120
110
100
90
130
120
110
100
90
ST1280C..K Series
(Single Side Cooled)
(DC) = 0.042 K/W
ST1280C..K Series
(Single Side Cooled)
R
(DC) = 0.042 K/W
R
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
70
80
60
70
30˚
30˚
50
60˚
60˚
60
90˚
90˚
40
120˚
180˚
120˚
50
30
180˚
DC
40
20
0
400
AverageOn-statecurrent(A)
Fig. 1 - Current Ratings Characteristics
800
1200
1600
0
500 1000 1500 2000 2500
AverageOn-statecurrent(A)
Fig. 2 - Current Ratings Characteristics
5
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ST1280C..KSeries
Bulletin I25195 rev. B 02/00
130
130
120
110
100
90
ST1280C..K Series
(Double Side Cooled)
ST1280C..K Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.021 K/W
R
(DC) = 0.021 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
80
70
70
60
60
30˚
50
60˚
30˚
50
90˚
40
60˚
90˚
120˚
120˚
40
30
180˚
180˚
DC
30
20
0
500 1000 1500 2000 2500 3000
0
1000 2000 3000 4000 5000
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
3600
3200
2800
2400
2000
1600
1200
800
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
DC
180˚
120˚
90˚
60˚
30˚
180˚
120˚
90˚
60˚
30˚
RMS Limit
RMS Limit
Conduction Period
Conduction Angle
ST1280C..K Series
ST1280C..K Series
T
= 125˚C
400
T
= 125˚C
J
J
0
0
0
1000 2000 3000 4000 5000
Average On-state Current (A)
0
500 1000 1500 2000 2500 3000
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
40000
35000
30000
25000
20000
15000
45000
40000
35000
30000
25000
20000
15000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125˚C
J
Initial T = 125 ˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
ST1280C..K Series
ST1280C..K Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST1280C..K Series
Bulletin I25195 rev. B 01/00
100000
10000
1000
T = 25˚C
J
T = 125˚C
J
ST1280C..K Series
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0.1
0.01
Steady State Value
= 0.042 K/W
R
thJ-hs
(Single Side Cooled)
= 0.021 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
ST1280C..K Series
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
10
100
100
10
1
Rectangular gate pulse
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt
tr<=1 µs
: 10V, 10ohms
(a)
(b)
(1)
(2) (3)
VG D
IG D
Frequency Limited by PG(AV)
10 100
Device: ST1280C..K Series
0.1
0.1
0.001
0.01
1
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
7
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