ST173C10CFH2LP [INFINEON]
INVERTER GRADE THYRISTORS; 逆变器GRADE闸流体
| 型号： | ST173C10CFH2LP |
| 厂家： | 
Infineon |
| 描述： | INVERTER GRADE THYRISTORS |
| 文件： | 总9页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25233 10/06
ST173CPbF SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
330A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST173C..C
330
Units
A
@ T
55
°C
hs
IT(RMS)
ITSM
I2t
610
A
@ T
25
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4680
4900
110
A
A
KA2s
KA2s
100
V
DRM/VRRM
1000 to1200
15 to 30
V
t range
µs
q
TJ
- 40 to 125
°C
1
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ST173CPbF Series
Bulletin I25233 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Typenumber
ST173C..C
repetitivepeakvoltage
V
non-repetitivepeakvoltage
V
10
12
1000
1200
1100
1300
40
CurrentCarryingCapability
ITM
ITM
ITM
Frequency
Units
180oel
1200
1260
1200
850
50
100μs
5570
2800
1620
800
50
180oel
50Hz
400Hz
760
730
660
590
1030
1080
4920
2460
1000Hz
600
350
50
490
270
50
1030
720
50
1390
680
50
A
V
2500Hz
RecoveryvoltageVr
Voltage before turn-on Vd
VDRM
V DRM
V DRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/μs
40
55
40
55
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-stateConduction
Parameter
ST173C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
330 (120)
55 (85)
610
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side
cooled
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4680
4900
3940
4120
110
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
A
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
KA2s
100
77
71
I2√t
Maximum I2√t for fusing
1100
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST173CPbF Series
Bulletin I25233 10/06
On-stateConduction
Parameter
ST173C..C Units Conditions
VTM
Max. peak on-state voltage
2.07
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.55
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.61
r 1
t
Low level value of forward
slope resistance
0.87
0.77
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r 2
t
High level value of forward
slope resistance
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST173C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
µs
Min Max
t
Max. turn-off time
15
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST173C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
40
V/μs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST173C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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3
ST173CPbF Series
Bulletin I25233 10/06
ThermalandMechanicalSpecification
Parameter
ST173C..C
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
R
thC-hsMax. thermal resistance,
case to heatsink
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO-200AB(A-PUK)
See Outline Table
ΔRthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidalconduction Rectangularconduction
Conductionangle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
OrderingInformationTable
Device Code
ST 17
3
C
12
C
H
K
1
P
3
7
1
2
4
5
6
8
9
10
11
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
q
dv/dt(V/µs) 20
50
100 200 400
8 - t code
q
15
18
20
25
30
CL
CP
CK
CJ
--
--
--
--
FP *
FK * HK
FJ
--
--
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
DP
DK
DJ
DH
EP
EK
EJ
EH
t (µs)
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
HJ
HH
FH
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Criticaldv/dt:
10
None = 500V/µsec(Standardvalue)
= 1000V/µsec (Special selection)
11 - P = Lead Free
L
4
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ST173CPbF Series
Bulletin I25233 10/06
OutlineTable
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
GATE TERM. FOR
19 (0.75)
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
130
ST173C..C Series
(Single Side Cooled)
ST173C..C Series
(Single Side Cooled)
120
110
100
90
R
(DC) = 0.17 K/W
R
(DC) = 0.17 K/W
thJ-hs
thJ-hs
80
Conduction Angle
Conduction Period
70
80
60
70
30°
60°
50
60
30°
80
90°
120°
40
60°
180°
90°
50
30
180°
120°
DC
40
20
0
40
120 160 200 240
0
50 100 150 200 250 300 350
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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5
ST173CPbF Series
Bulletin I25233 10/06
130
120
110
100
90
130
ST173C..C Series
(Double Side Cooled)
ST173C..C Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.08 K/W
R
(DC) = 0.08 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
80
70
70
30°
60
60°
60
90°
50
120°
180°
50
40
60°
120°
90°
40
30
30°
180°
DC
20
30
0
100 200 300 400 500 600 700
0
0
1
50 100 150 200 250 300 350 400
Average On-state Current (A)
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
1000
900
800
700
600
500
400
300
200
100
0
1400
1200
1000
800
600
400
200
0
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RM S Lim it
RMS Lim it
Conduction Period
ST173C..C Series
Conduction Angle
ST173C..C Series
T = 125° C
J
T = 125°C
J
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteris-
tics
Fig. 6 - On-state Power Loss Characteris-
tics
4500
4000
3500
3000
2500
2000
5000
4500
4000
3500
3000
2500
2000
1500
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
ST173C..C Series
ST173C..C Series
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
6
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ST173CPbF Series
Bulletin I25233 10/06
10000
1000
100
1
0.1
ST1 73C . . C Se rie s
ST173C..C Series
Steady State Value
= 0.17 K/ W
R
thJ-hs
0.01
(Single Side Cooled)
= 0.08 K/ W
T = 25°C
J
R
thJ-hs
T = 125°C
J
(Double Side Cooled)
(DC Operation)
0.001
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteris-
tics
160
250
200
150
100
50
I
= 500 A
TM
ST173C..C Series
I
= 500 A
300 A
140
120
100
80
TM
T = 125 °C
J
300 A
200 A
200 A
100 A
50 A
100 A
60
50 A
40
ST173C . . C Se r ie s
T = 125 °C
20
J
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
Snubber circuit
R = 47 ohms
s
Snubber circuit
R = 47 o h m s
s
C
V
= 0.22 µF
= 80%V
C
V
= 0.22 µF
= 80%V
s
s
D
D
DRM
DRM
50 Hz
100
500 400 200
1000
50 Hz
100
400 200
500
1000
1500
1500
2500
2500
3000
3000
ST173C..C Series
Sinusoidal pulse
5000
ST173C..C Series
Sin u so id a l p u lse
5000
T = 55°C
tp
C
T = 40°C
tp
C
1E1
1E4
1
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidt h (µs)
Fig. 13 - Frequency Characteristics
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7
ST173CPbF Series
Bulletin I25233 10/06
1E4
Snubber circuit
Snubber circ uit
R
C
V
= 47 ohms
= 0.22µF
= 80%V
R
C
V
= 47 o hm s
= 0.22 µF
= 80%V
s
s
s
s
D
DRM
D
DRM
50 Hz
100
1E3
200
50 Hz
400
100
200
500
1000
400
500
tp
1500
2000
1000
1500
2000
2500
2500
3000
ST1 7 3 C . . C Se rie s
Trapezoidal pulse
ST1 7 3C . . C Se rie s
Trapezoidal pulse
3000
T = 40°C
T = 5 5° C
C
C
tp
5000
di/dt = 50A/µs
di/dt = 50A/µs
5000
1E2
1E1
1E1
1E4
1E2
1E3
1E4
1E2
1E3
Pulse Ba se w id t h ( µs)
Pulse Ba se w id t h (µs)
Fig. 14 - Frequency Characteristics
1E4
Snubber circuit
Snubbercircuit
R = 47 ohms
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
s
s
C
V
= 0.22 µF
= 80%V
s
s
DRM
D
DRM
D
50 Hz
100
200
50 Hz
1E3
1E2
1E1
400
100
200
400
500
500
1000
1000
1500
1500
2500
2500
3000
3000
5000
10000
5000
ST173C..C Series
Trapezoidal pulse
ST173C..C Series
Trapezoidal pulse
10000
T = 40°C
C
tp
T = 55 ° C
C
di/dt = 100A/µs
tp
di/dt = 100A/ µs
1E1
1E2
1E3
1E4
1E4
1E1
1E2
1E3
Pulse Ba se w id t h (µs)
Pulse Basewid th (µs)
Fig. 15 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
ST17 3 C . . C Se rie s
Rectangular pulse
di/dt = 50A/µs
tp
20 joulesper pulse
20 joulesper p ulse
10
10
5
3
5
2
1
3
2
0.5
0.3
1
0.5
0.2
0.3
0.2
0.1
0.1
ST173C..C Series
Sinusoidal pulse
tp
1E1
1E14
1E1
1E2
Pulse Ba se w id t h (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E3
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
8
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ST173CPbF Series
Bulletin I25233 10/06
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2) (3) (4)
(1)
VGD
IGD
Device: ST173C..C Series Frequency Limited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 17 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
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9
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