ST173C [INFINEON]
INVERTER GRADE THYRISTORS Hockey Puk Version; 逆变器GRADE闸流体曲棍球北辰版本
| 型号： | ST173C |
| 厂家： | 
Infineon |
| 描述： | INVERTER GRADE THYRISTORS Hockey Puk Version |
| 文件： | 总10页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
D-510
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Bulletin I25180/A
ST173C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
330A
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST173C..C
330
Units
A
@ T
55
°C
hs
IT(RMS)
ITSM
I2t
610
A
@ T
25
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4680
4900
110
A
A
KA2s
KA2s
100
V
DRM/VRRM
1000 to1200
15 to 30
V
t range
q
µs
TJ
- 40 to 125
°C
D-511
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ST173C..C Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
Type number
ST173C..C
Code
repetitive peak voltage
V
non-repetitive peak voltage
V
@ TJ = TJ max.
mA
10
12
1000
1200
1100
1300
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
5570
2800
1620
800
50
180oel
50Hz
400Hz
760
730
660
590
1200
1260
1030
1080
4920
2460
1000Hz
600
350
50
490
270
50
1200
850
50
1030
720
50
1390
680
50
A
V
2500Hz
Recovery voltage Vr
Voltagebeforeturn-onVd
VDRM
VDRM
VDRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/µs
40
55
40
55
°C
EquivalentvaluesforRCcircuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST173C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
330 (120)
55 (85)
610
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4680
4900
3940
4120
110
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
100
KA2s
77
71
I2√t
Maximum I2√t for fusing
1100
KA2√s t = 0.1 to 10ms, no voltage reapplied
D-512
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ST173C..C Series
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
D-516
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ST173C..C Series
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
D-517
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ST173C..C Series
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
D-518
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ST173C..C Series
Fig. 17 - Gate Characteristics
D-519
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ST173C..C Series
On-state Conduction
Parameter
ST173C..C Units Conditions
VTM
Max. peak on-state voltage
2.07
1.55
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.61
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
t
0.87
0.77
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST173C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J = TJ max, VDRM = rated VDRM
1000
A/µs
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
15
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST173C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
T
J = TJ max. linear to 80% VDRM, higher value
500
40
V/µs
available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST173C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
D-513
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ST173C..C Series
Thermal and Mechanical Specification
Parameter
ST173C..C
Units Conditions
°C
TJ
T
Max. operatingtemperaturerange
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junctiontoheatsink
0.17
0.08
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
RthC-hs Max. thermal resistance,
casetoheatsink
0.033
0.017
4900
(500)
50
DCoperationsinglesidecooled
DCoperationdoublesidecooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
SeeOutlineTable
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 17
3
C
12
C
H
K
1
1
2
3
4
7
5
6
8
9
10
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100
200 400
8 - t code
q
15
18
20
25
30
CL
CP
CK
CJ
--
--
--
--
FP *
FK * HK
FJ
--
--
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
DP
DK
DJ
DH
EP
EK
EJ
EH
t (µs)
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
HJ
HH
FH
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
10
None = 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
L
D-514
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ST173C..C Series
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
42 (1.65) MAX.
28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
D-515
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