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ST173S10PFP0PBF [INFINEON]

Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM),;
ST173S10PFP0PBF
型号： ST173S10PFP0PBF
厂家： Infineon    Infineon
描述：

Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM),

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Bulletin I25246 10/06  
ST173SPbF SERIES  
Stud Version  
INVERTER GRADE THYRISTORS  
Features  
175A  
All diffused design  
Center amplifying gate  
Guaranteed high dv/dt  
Guaranteed high di/dt  
High surge current capability  
Low thermal impedance  
High speed performance  
Lead Free  
Typical Applications  
Inverters  
Choppers  
Induction heating  
All types of force-commutated converters  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST173S  
175  
Units  
A
@ TC  
85  
°C  
IT(RMS)  
ITSM  
275  
4680  
A
A
@50Hz  
@ 60Hz  
@50Hz  
@ 60Hz  
4900  
A
I2t  
110  
KA2s  
KA2s  
V
100  
VDRM/VRRM  
1000 to 1200  
15 to 25  
- 40 to 125  
case style  
TO-209AB (TO-93)  
t
range  
µs  
q
TJ  
°C  
1
www.irf.com  
ST173SPbF Series  
Bulletin I25246 10/06  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VDRM/VRRM, maximum  
VRSM , maximum  
IDRM/IRRM max.  
@ TJ = TJ max.  
mA  
Typenumber  
ST173S  
repetitivepeakvoltage  
V
non-repetitivepeakvoltage  
V
10  
12  
1000  
1200  
1100  
1300  
40  
CurrentCarryingCapability  
ITM  
ITM  
ITM  
Frequency  
Units  
180oel  
790  
810  
760  
510  
50  
100μs  
4510  
1970  
1050  
480  
50  
180oel  
50Hz  
400Hz  
500  
450  
320  
290  
550  
540  
3310  
1350  
1000Hz  
330  
170  
50  
190  
80  
490  
300  
50  
680  
280  
50  
A
V
2500Hz  
RecoveryvoltageVr  
Voltage before turn-on Vd  
50  
VDRM  
V DRM  
V DRM  
Rise of on-state current di/dt  
Case temperature  
50  
60  
50  
85  
-
-
-
-
A/μs  
60  
85  
60  
85  
°C  
Equivalent values for RC circuit  
47Ω / 0.22µF  
47Ω / 0.22µF  
47Ω / 0.22µF  
On-stateConduction  
Parameter  
ST173S  
Units Conditions  
IT(AV) Max. average on-state current  
@ Case temperature  
175  
85  
A
180° conduction, half sine wave  
°C  
IT(RMS) Max. RMS on-state current  
275  
DC @ 75°C case temperature  
ITSM  
Max. peak, one half cycle,  
non-repetitive surge current  
4680  
4900  
3940  
4120  
110  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
No voltage  
A
reapplied  
100% VRRM  
reapplied  
Sinusoidal half wave,  
I2t  
Maximum I2t for fusing  
No voltage Initial TJ = TJ max  
reapplied  
100  
KA2s  
77  
100% VRRM  
71  
reapplied  
I2√t  
Maximum I2√t for fusing  
1100  
KA2√s t = 0.1 to 10ms, no voltage reapplied  
www.irf.com  
2
ST173SPbF Series  
Bulletin I25246 10/06  
On-stateConduction  
Parameter  
ST173S  
2.07  
Units Conditions  
VTM  
Max. peak on-state voltage  
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse  
p
VT(TO)1 Low level value of threshold  
voltage  
1.55  
1.58  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(I > π x IT(AV)), TJ = TJ max.  
V
VT(TO)2 High level value of threshold  
voltage  
r 1  
t
Low level value of forward  
slope resistance  
0.87  
0.82  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(I > π x IT(AV)), TJ = TJ max.  
mΩ  
r 2  
t
High level value of forward  
slope resistance  
IH  
IL  
Maximum holding current  
600  
TJ = 25°C, IT > 30A  
mA  
Typical latching current  
1000  
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A  
Switching  
Parameter  
ST173S  
1000  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
TJ = TJ max, VDRM = rated VDRM  
A/µs  
ITM = 2 x di/dt  
TJ = 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs  
p
t
Typical delay time  
1.1  
d
Resistive load, Gate pulse: 10V, 5Ω source  
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs  
µs  
Min Max  
t
Max. turn-off time  
15  
25  
VR = 50V, t = 500µs, dv/dt: see table in device code  
p
q
Blocking  
Parameter  
ST173S  
500  
Units Conditions  
dv/dt  
Maximum critical rate of rise of  
off-state voltage  
TJ = TJ max., linear to 80% VDRM, higher value  
V/μs  
available on request  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
40  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST173S  
60  
Units Conditions  
PGM  
W
A
TJ = TJ max, f = 50Hz, d% = 50  
10  
10  
TJ = TJ max, t ≤ 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
5
V
TJ = TJ max, t ≤ 5ms  
p
-VGM Maximum peak negative  
gate voltage  
IGT  
Max. DC gate current required  
to trigger  
200  
3
mA  
V
TJ = 25°C, VA = 12V, Ra = 6Ω  
VGT  
Max. DC gate voltage required  
to trigger  
IGD  
Max. DC gate current not to trigger  
20  
mA  
V
TJ = TJ max., rated VDRM applied  
VGD  
Max. DC gate voltage not to trigger  
0.25  
www.irf.com  
3
ST173SPbF Series  
Bulletin I25246 10/06  
ThermalandMechanicalSpecifications  
Parameter  
ST173S  
Units  
°C  
Conditions  
TJ  
T
Max. junction operating temperature range -40 to 125  
Max. storage temperature range  
-40 to 150  
0.105  
stg  
RthJC Max. thermal resistance, junction to case  
RthCS Max. thermal resistance, case to heatsink  
DC operation  
K/W  
0.04  
Mounting surface, smooth, flat and greased  
T
Mounting torque, ± 10%  
31  
Nm  
Non lubricated threads  
Lubricated threads  
(275)  
(Ibf-in)  
24.5  
Nm  
(210)  
(Ibf-in)  
wt  
Approximate weight  
Case style  
280  
g
TO-209AB(TO-93)  
See Outline Table  
ΔRthJC Conduction  
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)  
Conductionangle Sinusoidalconduction Rectangularconduction Units  
Conditions  
180°  
120°  
0.016  
0.019  
0.012  
0.020  
90°  
60°  
30°  
0.025  
0.036  
0.060  
0.027  
0.037  
0.060  
K/W  
TJ = TJ max.  
OrderingInformationTable  
Device Code  
ST 17  
3
S
12  
P
F
K
0
PbF  
4
7
1
6
11  
2
3
5
8
9
10  
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor  
Essential part number  
3 = Fast turn off  
S = Compression bonding Stud  
Voltage code: Code x 100 = VRRM (See Voltage Ratings table)  
P = Stud base 3/4" 16UNF-2A  
dv/dt - tq combinations available  
M = Stud base metric threads M16 x 1.5  
dv/dt(V/µs) 20  
50  
100 200 400  
7
8
9
-
-
-
Reapplied dv/dt code (for t test condition)  
q
15  
18  
20  
25  
30  
CL  
CP  
CK  
CJ  
--  
--  
--  
--  
FP *  
--  
--  
t code  
q
DP  
DK  
DJ  
DH  
EP  
EK  
EJ  
EH  
t (µs)  
0 = Eyelet terminals (Gate and Aux. Cathode Leads)  
1 = Fast-on terminals (Gate and Aux. Cathode Leads)  
2 = Flag terminals (For Cathode and Gate Terminals)  
Criticaldv/dt:  
FK * HK  
q
FJ  
HJ  
FH  
HH  
*Standard part number.  
All other types available only on request.  
-
-
10  
11  
None = 500V/µsec(Standardvalue)  
L
= 1000V/µsec(Specialselection)  
LeadFree  
www.irf.com  
4
ST173SPbF Series  
Bulletin I25246 10/06  
OutlineTable  
CERAMIC HOUSING  
19 (0.75) MAX.  
4 (0.16) MAX.  
8.5 (0.33) DIA.  
4.3 (0.17) DIA.  
FLEXIBLE LEAD  
2
C.S. 25mm  
(0.039 s.i.)  
RED SILICON RUBBER  
RED CATHODE  
2
Fast-on Terminals  
C.S. 0.4mm  
(0.0006 s.i.)  
AMP. 280000-1  
REF-250  
WHITE GATE  
+I  
+
220 (8.66) 10 (0.39)  
-
RED SHRINK  
WHITE SHRINK  
27.5 (1.08) MAX. DIA.  
SW 32  
CaseStyleTO-209AB(TO-93)  
3/4"-16UNF-2A *  
All dimensions in millimeters (inches)  
35 (1.38) MAX.  
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.  
CERAMIC HOUSING  
FLAG TERMINALS  
22 (0.89)  
14 (0.55)  
DIA. 6.5 (0.25)  
1.5 (0.06) DIA.  
DIA. 27.5 (1.08) MAX.  
SW 32  
CaseStyleTO-209AB(TO-93)Flag  
All dimensions in millimeters (inches)  
3/4"-16UNF-2A*  
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.  
3 (0.12)  
www.irf.com  
5
ST173SPbF Series  
Bulletin I25246 10/06  
130  
130  
120  
110  
100  
90  
ST173SSeries  
(DC) = 0.105 K/W  
ST173SSeries  
R
R
(DC) = 0.105 K/W  
thJC  
thJC  
120  
110  
100  
90  
Conduction Period  
Conduction Angle  
30°  
60°  
30°  
90°  
120°  
80  
60°  
180°  
90°  
120°  
180°  
DC  
80  
70  
0
20 40 60 80 100 120 140 160 180  
Average On-state Current (A)  
0
40 80 120 160 200 240 280  
Average On-state Current (A)  
Fig. 2 - Current Ratings Characteristics  
Fig. 1 - Current Ratings Characteristics  
350  
R
t
0
.
1
h
180°  
120°  
90°  
K
S
/
A
W
300  
=
0
.
2
0.  
K
0
/
W
8
K
/
60°  
30°  
250  
200  
150  
100  
50  
W
-
0
0
D
.
3
e
K
/
l
W
t
a
R
.
4
K
RMS Lim it  
/
W
W
0
.
5
K
/
Conduction Angle  
ST173SSeries  
T = 125°C  
J
0
0
20 40 60 80 100 120 140 160 1  
Average On-state Current (A)  
Fig. 3 - On-state Power Loss Characteristics  
8
0
50  
75  
100  
125  
Maximum Allowable Ambient Temperature (°C)  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
DC  
180°  
120°  
90°  
60°  
30°  
0
.
1
K
/
W
0
.
1
6
K
/
W
0
0
.
3
K
/
W
W
RMS Lim it  
Conduction Period  
ST173SSeries  
.
5
K
/
T = 125°C  
J
0
0
40 80 120 160 200 240  
Average On-state Current (A)  
2
8
0
50  
75  
100  
125  
Maximum Allowable Ambient Temperature (°C)  
Fig. 4 - On-state Power Loss Characteristics  
www.irf.com  
6
ST173SPbF Series  
Bulletin I25246 10/06  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
4500  
4000  
3500  
3000  
2500  
2000  
Maximum Non Repetitive Surge Current  
VersusPulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
At Any Rated Load Condition And With  
Rated V  
Applied Following Surge.  
RRM  
Initial T = 125°C  
J
Initial T = 125°C  
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
J
No Voltage Reapplied  
Rated V  
Reapplied  
RRM  
ST173SSeries  
ST173SSeries  
1
10  
100  
0.01  
0.1  
Pulse Train Duration (s)  
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 6 - Maximum Non-repetitive Surge Current  
Fig. 5 - Maximum Non-repetitive Surge Current  
10000  
1
St e a d y St a t e V a l u e  
= 0.105 K/W  
ST173SSeries  
R
thJC  
(DC Operation)  
0.1  
0.01  
1000  
T= 25°C  
J
T= 125°C  
J
ST1 73S Se r ie s  
0.001  
100  
0.001  
0.01  
0.1  
1
10  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
Square Wave Pulse Duration (s)  
InstantaneousOn-state Voltage (V)  
Fig. 8 - Thermal Impedance ZthJC Characteristic  
Fig. 7 - On-state Voltage Drop Characteristics  
160  
140  
120  
100  
80  
250  
200  
150  
100  
50  
I
= 500 A  
TM  
I
= 500 A  
300 A  
200 A  
100 A  
50 A  
TM  
ST173SSeries  
300 A  
200 A  
T = 125 °C  
J
100 A  
60  
50 A  
40  
ST173SSeries  
20  
T = 125 °C  
J
0
0
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
Rate Of Fall Of On-state Current - di/dt (A/µs)  
Fig. 9 - Reverse Recovered Charge Characteristics  
Rate Of Fall Of On-state Current - di/dt (A/ µs)  
Fig. 10 - Reverse Recovery Current Characteristics  
www.irf.com  
7
ST173SPbF Series  
Bulletin I25246 10/06  
1E4  
Snubber circuit  
Snubber circ uit  
R
C
V
= 47 ohms  
= 0.22 µF  
= 80%V  
R
C
V
= 47 o hm s  
= 0.22 µF  
= 80%V  
s
s
s
s
D
D
DRM  
DRM  
400  
50 Hz  
100  
200  
500  
1000  
1E3  
100  
50 Hz  
200  
400  
500  
1000  
1500  
2000  
2500  
1500  
2000  
ST1 7 3S Series  
Sinusoidal pulse  
3000  
ST1 7 3S Se rie s  
Sinusoidal pulse  
2500  
T
= 85°C  
tp  
C
T
= 60°C  
3000  
tp  
C
1E2  
1E1  
1E1  
1
1E4
1E2  
1E3  
1E4  
1E2  
1E3  
Pulse Ba sew id th (µs)  
Pulse Ba sew id t h (µs)  
Fig. 11 - Frequency Characteristics  
1E4  
1E3  
1E2  
1E1  
Snubbercircuit  
Snubber circuit  
R
C
V
= 47 o hm s  
= 0.22 µF  
= 80%V  
s
s
R
C
V
= 47 ohms  
= 0.22 µF  
= 80%V  
s
s
D
D
DRM  
DRM  
50 Hz  
100  
200  
50 Hz  
100  
200  
400  
400  
500  
500  
1000  
1500  
1000  
1500  
2000  
2500  
3000  
5000  
2000  
2500  
3000  
ST173SSeries  
Trapezoidal pulse  
ST1 73 S Se r ie s  
Trapezoidal pulse  
= 85 ° C  
T
= 60°C  
C
T
C
di/dt =50A/µs  
5000  
tp  
di/dt = 50A/µs  
1E1  
1E4  
1E1  
1E2  
1E3  
1E2  
1E3  
1E4  
Pulse Ba se w id t h (µs)  
Pulse Ba se w id t h ( µs)  
Fig. 12 - Frequency Characteristics  
Snubber circuit  
1E4  
1E3  
1E2  
1E1  
Snubbercircuit  
R
C
V
= 47 ohms  
= 0.22 µF  
= 80%V  
R
C
V
= 47 o hm s  
= 0.22 µF  
= 80%V  
s
s
s
s
D
D
DRM  
DRM  
50 Hz  
50 Hz  
100  
200  
100  
200  
400  
500  
400  
500  
1000  
1500  
1000  
1500  
2000  
2500  
5000  
10000  
2000  
2500  
ST173SSeries  
Trapezoidal pulse  
ST17 3S Se rie s  
5000  
10000  
Trapezoidal pulse  
= 85°C  
di/dt = 100A/µs  
T
C
= 60°C  
T
C
tp  
tp  
di/dt =100A/µs  
1E1  
1E1  
1E2  
1E3  
1E  
4
1E2  
1E3  
1E4  
Pulse Ba se w id t h ( µs)  
Pulse Ba sew id th ( µs)  
Fig. 13 - Frequency Characteristics  
www.irf.com  
8
ST173SPbF Series  
Bulletin I25246 10/06  
1E5  
1E4  
1E3  
1E2  
1E1  
ST1 73 S Se rie s  
Rectangular pulse  
di/dt = 50A/µs  
tp  
20 joulesper pulse  
20 joulesper pulse  
7.5  
4
10  
2
5
1
3
2
0.5  
1
0.3  
0.5  
0.2  
0.1  
0.4  
0.3  
0.2  
ST1 7 3S Se r ie s  
0.1  
Sinusoidal pulse  
tp  
1E1  
1E2  
1E3  
1E1411E1  
1E2  
1E3  
1E4  
Pulse Basewidth (µs)  
Pulse Ba se w id t h ( µs)  
Fig. 14 - Maximum On-state Energy Power Loss Characteristics  
100  
10  
1
Rectangular gate pulse  
(1) PGM = 10W, tp = 20ms  
(2) PGM = 20W, tp = 10ms  
(3) PGM = 40W, tp = 5ms  
(4) PGM = 60W, tp = 3.3ms  
a) Recommended load line for  
rated di/dt : 20V, 10ohms; tr<=1 µs  
b) Recommended load line for  
<=30%rated di/dt : 10V, 10ohms  
tr<=1 µs  
(a)  
(b)  
(2)  
(3) (4)  
(1)  
VGD  
IGD  
Device: ST173SSeries  
0.1  
Frequency Limited by PG(AV)  
10 100  
0.1  
0.001  
0.01  
1
InstantaneousGate Current (A)  
Fig. 15 - Gate Characteristics  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 10 /06  
www.irf.com  
9

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ST173S10PHH0LPBF

 Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PIN
VISHAY

ST173S10PHH0PBF

 Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB
INFINEON

ST173S10PHH1LPBF

 Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PIN
VISHAY
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