ST180C04C0LPBF [INFINEON]
Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2;
| 型号： | ST180C04C0LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 660A I(T)RMS, 350000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2 |
| 文件： | 总7页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25164 rev. C 02/00
ST180C..C SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
350A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST180C..C
Units
350
55
A
°C
@ T
hs
IT(RMS)
660
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5000
5230
125
114
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 2000
100
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST180C..C Series
Bulletin I25164 rev. C 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
peak and off-state voltage
repetitive peak voltage
V
V
04
08
12
16
18
20
400
500
800
900
1200
1600
1800
2000
1300
1700
1900
2100
ST180C..C
30
On-state Conduction
Parameter
ST180C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
350 (140)
55 (85)
660
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
5000
5230
4200
4400
125
114
88
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
81
I2√t
Maximum I2√t for fusing
1250
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
1.08
1.14
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
1.18
1.14
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
slope resistance
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.96
600
V
I = 750A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
mA
TJ = TJ max, anode supply 12V resistive load
IL
Max. (typical) latching current
1000 (300)
2
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ST180C..C Series
Bulletin I25164 rev. C 02/00
Switching
Parameter
ST180C..C
1000
Units Conditions
A/µs
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
I
TM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Blocking
Parameter
ST180C..C
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = TJ max linear to 80% rated VDRM
IDRM
IRRM
Max. peak reverse and off-state
leakage current
30
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST180C..C
Units Conditions
PGM
10
2.0
3.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
180
MAX.
-
TJ = - 40°C
IGT
DC gate current required
to trigger
90
40
150
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
2.9
1.8
1.2
TJ = - 40°C
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ = 25°C
J = 125°C
T
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
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3
ST180C..C Series
Bulletin I25164 rev. C 02/00
Thermal and Mechanical Specification
Parameter
ST180C..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.015
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
Ordering Information Table
Device Code
ST 18
0
C
20
C
1
7
1
2
3
5
6
8
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
C = Puk Case TO-200AB (A-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt:None = 500V/µsec (Standard value)
8
-
L
= 1000V/µsec (Special selection)
4
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ST180C..C Series
Bulletin I25164 rev. C 02/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
CaseStyleTO-200AB(A-PUK)
All dimensions in millimeters (inches)
38 (1.50) DIA MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25° 5°
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
130
120
110
100
90
ST180C..C Series
(Single Side Cooled)
ST180C..C Series
(Single Side Cooled)
R
(DC) = 0.17 K/W
R
(DC) = 0.17 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
70
80
30˚
60
60˚
70
30˚
90˚
50
60˚
60
120˚
180˚
90˚
120˚
40
50
30
180˚
DC
40
0
20
50
100
150
200
250
0
100
AverageOn-stateCurrent(A)
Fig. 2 - Current Ratings Characteristics
200
300
400
AverageOn-stateCurrent(A)
Fig. 1 - Current Ratings Characteristics
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5
ST180C..C Series
Bulletin I25164 rev. C 02/00
130
130
120
110
100
90
ST180C..C Series
(Double Side Cooled)
ST180C..C Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.08 K/W
R
(DC) = 0.08 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
80
70
70
30˚
60
60
30˚
60˚
90˚
60˚
50
50
120˚
180˚
90˚
120˚
40
40
180˚
30
30
DC
20
20
0
50 100 150 200 250 300 350 400 450
0
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1000
900
800
700
600
500
400
300
200
100
0
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
DC
180˚
120˚
90˚
60˚
30˚
180˚
120˚
90˚
60˚
30˚
RMS Limit
RMS Limit
Conduction Period
ST180C..C Series
Conduction Angle
ST180C..C Series
T
= 125˚C
T
= 125˚C
J
J
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
4500
4000
3500
3000
2500
2000
5000
4500
4000
3500
3000
2500
2000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125˚C
J
Initial T = 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
ST180C..C Series
ST180C..C Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST180C..C Series
Bulletin I25164 rev. C 02/00
10000
1000
100
T = 25˚C
J
T = 125˚C
J
ST180C..C Series
1
2
3
4
5
6
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
1
0.1
Steady State Value
= 0.17 K/W
R
thJ-hs
(Single Side Cooled)
= 0.08 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST180C..C Series
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
10
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(2) (3) (4)
(1)
VGD
IGD
Device: ST180C..C Series
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
7
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