ST180S14P0 [INFINEON]
Silicon Controlled Rectifier, 314A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209AB;
| 型号： | ST180S14P0 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 314A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-209AB 栅 栅极 |
| 文件： | 总9页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25165 rev. B 01/94
ST180S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
200A
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
ST180S
Units
200
85
A
°C
A
@ TC
IT(RMS)
ITSM
314
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5000
A
5230
A
I2t
125
KA2s
KA2s
V
114
VDRM/VRRM
400 to 2000
100
case style
TO-209AB (TO-93)
t
typical
µs
°C
q
TJ
- 40 to 125
1
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ST180S Series
Bulletin I25165 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
peak and off-state voltage
V
repetitive peak voltage
V
@ T = T max
J mAJ
04
08
12
16
18
20
400
800
500
900
1200
1600
1800
2000
1300
1700
1900
2100
ST180S
30
On-state Conduction
Parameter
ST180S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
200
85
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
314
5000
5230
4200
4400
125
A
DC @ 76°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
114
KA2s
88
81
I2√t
Maximum I2√t for fusing
1250
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
1.08
1.14
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO)2 High level value of threshold
voltage
(I > π x IT(AV)),TJ = TJ max.
rt1
Low level value of on-state
slope resistance
1.18
1.14
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.75
600
V
I = 570A, TJ = 125°C, t = 10ms sine pulse
pk p
Maximum holding current
Max. (typical) latching current
mA
TJ = TJ max, anode supply 12V resistive load
IL
1000 (300)
Switching
Parameter
ST180S
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST180S Series
Bulletin I25165 rev. B 01/94
Blocking
Parameter
ST180S
500
Units Conditions
V/µs TJ = TJ max linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM
IRRM
Max. peak reverse and off-state
leakage current
30
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST180S
Units Conditions
PGM
10
2.0
3.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
IGT
DC gate current required
to trigger
TJ = - 40°C
180
90
-
150
-
mA TJ
= 25°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
40
TJ = 125°C
TJ = - 40°C
VGT
DC gate voltage required
to trigger
2.9
1.8
1.2
-
3.0
-
V
TJ = 25°C
TJ = 125°C
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST180S
-40 to 125
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 150
stg
RthJC Max. thermal resistance,
junction to case
0.105
DC operation
K/W
RthCS Max. thermal resistance,
0.04
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
31
Non lubricated threads
(275)
24.5
(210)
280
Nm
(lbf-in)
Lubricated threads
wt
Approximate weight
Case style
g
TO - 209AB (TO-93)
See Outline Table
3
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ST180S Series
Bulletin I25165 rev. B 01/94
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.015
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
60°
30°
Ordering Information Table
Device Code
ST 18
0
S
20
P
0
1
2
5
6
7
8
9
3
4
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
P = Stud base 16UNF threads
M = Stud base metric threads (M16 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
V = Glass-metal seal (only up to 1200V)
8
9
-
-
None = Ceramic housing (over 1200V)
Critical dv/dt: None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST180S Series
Bulletin I25165 rev. B 01/94
Outline Table
GLASS METAL SEAL
19 (0.75) MAX.
8.5 (0.33) DIA.
4 (0.16) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
2
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
+I
WHITE GATE
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
28.5 (1.12) MAX. DIA.
SW 32
3/4"-16UNF-2A *
35 (1.38) MAX.
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
19 (0.75) MAX.
8.5 (0.33) DIA.
4 (0.16) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
2
C.S. 0.4mm
(0.0006 s.i.)
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
3/4"-16UNF-2A *
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
5
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ST180S Series
Bulletin I25165 rev. B 01/94
Outline Table
GLASS-METAL SEAL
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 28.5 (1.12) MAX.
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
3 (0.12)
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
6
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ST180S Series
130
120
110
100
90
130
120
110
100
90
ST180S Se rie s
ST180S Se ries
(DC) = 0.105 K/W
R
(DC ) = 0.105 K/ W
R
thJC
thJC
C o nd uc tio n Pe rio d
C o nd uc tio n Ang le
30°
60°
90°
30°
60°
120°
80
180°
90°
120°
180°
DC
70
80
0
50 100 150 200 250 300 350
Ave ra ge On-sta te C urre n t (A)
0
40
80
120
160
200
240
Ave ra g e O n-sta te Curre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
180°
t
h
S
120°
90°
60°
30°
A
0
.
300
1
6
K
/
W
0
0
.
2
250
200
150
100
50
K
/
W
.
3
K
/
W
W
RMS Lim it
0
.
4
K
/
0
.
5
K
/
W
C o nd uc tio n An g le
0
.
8
K
/
W
W
1
.
2
K
/
ST180S Se rie s
T
= 125°C
J
0
0
40
80
120
160
200
2
4
0
50
75
100
125
Ave ra g e On -sta te Curre n t (A)
Ma xim um Allowa b le Am b ie n t Te mp e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
t
h
S
A
0
.
1
6
K
/
W
0
.
2
K
/
W
RMS Limit
0
.
4
K
/
W
C o nd u ctio n Pe rio d
0
.
5
K
/
W
ST180S Se rie s
1
.
2
K
/ W
T
= 125°C
J
0
0
40 80 120 160 200 240 280
3
2
0
50
75
100
125
Ave ra g e O n-sta te C urre n t (A)
Ma ximum Allo wa b le Am b ie nt Te m p e ra ture (°C )
Fig. 4 - On-state Power Loss Characteristics
7
ST180S Series
4800
5500
5000
4500
4000
3500
3000
2500
2000
At Any Ra te d Lo a d Co nd itio n An d With
Ma ximum No n Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tio n. Co ntro l
O f C on d uc tio n Ma y Not Be Ma inta ine d .
Ra te d V
Ap p lie d Follo wing Surg e .
RRM
4400
4000
3600
3200
2800
2400
2000
In itia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
J
No Vo lta g e Re a pp lie d
Ra te d V
Re a p p lie d
RRM
ST180S Se rie s
ST180S Se rie s
1
10
100
0.01
0.1
1
Nu mb er Of Eq ua l Amp litu d e Ha lf C yc le C urren t Pulse s (N)
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
T = 125°C
J
1000
ST180S Se rie s
100
0.5
1
1.5
2 2.5 3 3.5 4 4.5 5 5.5 6
In sta n ta n e o us On-sta te Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue
= 0.105 K/ W
R
thJC
(DC Op e ra tio n)
0.1
0.01
0.001
ST180S Se rie s
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
8
ST180S Series
100
10
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
Re c ta ng ula r ga te p ulse
a ) Re c o mm e n de d loa d lin e for
ra te d di/ d t : 20V, 10o hms; tr<=1 µs
b ) Re c omm e n de d loa d lin e fo r
<=30% ra te d d i/d t : 10V, 10oh ms
tr<=1 µs
(4) PGM = 60W, tp = 0.66m s
(a )
(b )
1
(1) (2) (3) (4)
VG D
IGD
De vic e : ST180S Se rie s
0.1
Fre q ue nc y Lim ite d b y PG (AV)
0.1
0.001
0.01
1
10
100
Insta nta n e o us G a te C urre nt (A)
Fig. 9 - Gate Characteristics
9
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