ST183C04CEM2P [INFINEON]
Silicon Controlled Rectifier, 370000mA I(T), 400V V(DRM);
| 型号： | ST183C04CEM2P |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 370000mA I(T), 400V V(DRM) |
| 文件： | 总9页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25234 10/06
ST183CPbF SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
370A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST183C..C
Units
370
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
690
25
A
@ T
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
4900
5130
120
110
A
A
KA2s
KA2s
V
DRM/VRRM
400 to 800
10 to 20
V
t range
µs
q
TJ
- 40 to 125
°C
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1
ST183CPbF Series
Bulletin I25234 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Typenumber
ST183C..C
repetitivepeakvoltage
V
non-repetitivepeakvoltage
V
04
08
400
800
500
900
40
CurrentCarryingCapability
ITM
ITM
ITM
Frequency
Units
180oel
1220
1270
1210
860
50
100μs
5450
2760
1600
800
50
180oel
50Hz
400Hz
770
730
660
600
1160
1090
4960
2420
1000Hz
600
350
50
490
270
50
1040
730
50
1370
680
50
A
V
2500Hz
RecoveryvoltageVr
Voltage before turn-on Vd
VDRM
V DRM
V DRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/μs
40
55
40
55
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-stateConduction
Parameter
ST183C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
370 (130)
55 (85)
690
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC@ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
4900
5130
4120
4310
120
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
110
KA2s
85
78
I2√t
Maximum I2√t for fusing
1200
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST183CPbF Series
Bulletin I25234 10/06
On-stateConduction
Parameter
ST183C..C Units Conditions
VTM
Max. peak on-state voltage
1.80
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.40
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.45
r 1
t
Low level value of forward
slope resistance
0.67
0.58
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r 2
t
High level value of forward
slope resistance
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST183C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.1
d
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
µs
Min Max
t
Max. turn-off time
10
20
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST183C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
40
V/μs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST183C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST183CPbF Series
Bulletin I25234 10/06
ThermalandMechanicalSpecification
Parameter
ST183C..C
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
R
thC-hsMax. thermal resistance,
case to heatsink
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO-200AB(A-PUK)
See Outline Table
ΔRthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidalconduction Rectangularconduction
Conductionangle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
OrderingInformationTable
Device Code
ST 18
3
C
08
C
H
K
1
P
3
7
4
6
1
2
5
8
9
10
11
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
q
dv/dt(V/µs) 20
50
100 200 400
8 - t code
10
12
15
18
20
CN
CM
CL
CP
CK
DN
DM
DL
DP
DK
EN
EM
EL
EP
EK
FN* HN
q
FM
FL*
FP
HM
HL
HP
HK
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
t (µs)
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
FK
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Criticaldv/dt:
None = 500V/µsec(Standardvalue)
L
= 1000V/µsec (Special selection)
11
- P = Lead Free
4
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ST183CPbF Series
Bulletin I25234 10/06
OutlineTable
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
130
ST183C..C Series
(Single Side Cooled)
ST183C..C Series
(Single Side Cooled)
120
110
100
90
R (DC) = 0.17 K/W
thJ-hs
R
(DC) = 0.17 K/W
thJ-hs
Conduction Angle
80
Conduction Period
70
80
60
70
30°
50
30°
60°
60
60°
40
90°
120°
180°
90°
50
120°
30
180°
DC
40
20
0
40
80
120 160 200 240
0
50 100 150 200 250 300 350 400
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST183CPbF Series
Bulletin I25234 10/06
130
130
120
110
100
90
ST183C..C Series
(Double Side Cooled)
ST183C..C Series
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.08 K/W
R
(DC) = 0.08 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Period
80
80
70
30°
70
30°
60°
60
60°
60
90°
90°
50
120°
180°
50
40
120°
40
30
180°
DC
30
20
0
0
1
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
1000
900
800
700
600
500
400
300
200
100
0
1400
1200
1000
800
600
400
200
0
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RM S Lim it
RM S Lim it
Conduction Period
ST1 83C . . C Se r ie s
Conduction Angle
ST183C..C Series
T = 125°C
J
T = 125°C
J
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteris-
tics
Fig. 6 - On-state Power Loss Characteris-
tics
4500
4000
3500
3000
2500
2000
5000
4500
4000
3500
3000
2500
2000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST183C..C Series
ST183C..C Series
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Pulse Train Duration (s)
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
6
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ST183CPbF Series
Bulletin I25234 10/06
10000
1000
100
1
0.1
ST183C . . C Se rie s
ST183C..C Series
Steady State Value
= 0.17 K/ W
R
thJ-hs
T = 25 ° C
J
0.01
0.001
(Single Side Cooled)
= 0.08 K/ W
T = 125°C
J
R
thJ-hs
(Double Side Cooled)
(DC Operation)
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteris-
tics
160
250
200
150
100
50
I
= 500 A
I
= 500 A
300 A
200 A
100 A
ST183C..C Series
T = 125 °C
TM
TM
140
120
100
80
J
300 A
200 A
100 A
50 A
60
50 A
40
ST183C..C Series
T = 125 °C
20
J
0
0
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
Snubber circuit
R = 47 o h m s
Snubber circuit
R = 47 o h m s
s
s
C
V
= 0.22 µF
= 80%V
C
V
= 0.22 µF
= 80%V
s
s
D
D
DRM
DRM
50 Hz
100
200
400
50 Hz
100
200
500
400
1000
500
1000
1500
1500
2500
2500
3000
5000
3000
5000
ST1 83 C . . C Se rie s
Sinusoidal pulse
ST183C..C Series
Sinusoidal pulse
tp
T = 55°C
C
T = 40°C
tp
C
10000
10000
1E4 1E1
1
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth (µs)
Pulse Ba sew id t h ( µs)
Fig. 13 - Frequency Characteristics
7
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ST183CPbF Series
Bulletin I25234 10/06
1E4
Snubber circuit
Snubber circuit
R = 47 ohms
R
C
V
= 47 ohms
= 0.22 µF
= 80%V
s
s
C
V
= 0.22 µF
= 80%V
s
s
D
DRM
D
DRM
50 Hz
100
50 Hz
1E3
200
100
200
400
400
500
500
tp
1000
1000
1500
2500
1500
2500
1E2
ST183C..C Series
Trapezoidal pulse
ST183C..C Series
Trapezoidal pulse
3000
5000
3000
T = 40°C
C
T = 55°C
C
tp
di/dt = 50A/µs
di/dt = 50A/µs
5000
1E2
1E1
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba sew id t h ( µs)
Fig. 14 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snubber circuit
R = 47 ohms
s
Snubber circuit
R
C
V
= 47 ohms
= 0.22 µF
= 80% V
DRM
s
C
= 0.22 µF
s
s
V
= 80%V
DRM
D
D
50 Hz
100
50 Hz
200
400
500
100
200
400
1000
500
1000
1500
1500
2500
2500
3000
3000
5000
10000
5000
10000
ST183C..C Series
Trapezoidal pulse
ST183C..C Series
Trapezoidal pulse
T = 55°C
T = 40°C
C
C
tp
tp
di/dt = 100A/µs
di/dt = 100A/µs
1E4
1E1
1
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba sew id t h ( µs)
Fig. 15 - Frequency Characteristics
1E5
ST183C..C Series
Rectangular pulse
di/dt = 50A/µs
tp
1E4
1E3
1E2
1E1
20 joulesper pulse
10
4
20 joulesper pulse
10
2
4
1
0.5
2
0.3
1
0.2
0.5
0.3
0.1
0.2
0.1
ST183C..C Series
Sinusoidal pulse
tp
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
1
Pulse Basewidth (µs)
Pulse Ba sew id t h (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST183CPbF Series
Bulletin I25234 10/06
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 20ms
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
(2)
(3) (4)
(1)
VGD
IGD
Device: ST183C..C Series Frequency Limited by PG(AV)
0.1 10 100
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 17 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
9
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