ST203C10CDJ0PBF [INFINEON]
Silicon Controlled Rectifier, 700A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3;
| 型号： | ST203C10CDJ0PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 700A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3 栅 栅极 |
| 文件： | 总9页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25176 rev. B 04/00
ST203C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
370A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST203C..C
Units
370
55
A
°C
@ T
hs
IT(RMS)
700
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5260
5510
138
126
A
A
I2t
KA2s
KA2s
VDRM/VRRM
1000 to 1200
20 to 30
V
t range
q
µs
TJ
- 40 to 125
°C
1
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ST203C..C Series
Bulletin I25176 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST203C..C
repetitive peak voltage
V
non-repetitive peak voltage
V
10
12
1000
1200
1100
1300
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
5620
2940
1750
910
50
180oel
50Hz
400Hz
860
840
750
706
1340
1400
1160
1220
5020
2590
1000Hz
700
430
50
580
340
50
1350
980
50
1170
830
50
1520
780
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
VDRM
VDRM
V DRM
Rise of on-state currentdi/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/µs
°C
40
55
40
55
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST203C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
370 (140)
55 (85)
700
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
5260
5510
4420
4630
138
126
98
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
KA2s
89
I2√t
Maximum I2√t for fusing
1380
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST203C..C Series
Bulletin I25176 rev. B 04/00
On-state Conduction
Parameter
ST203C..C Units Conditions
VTM
Max. peak on-state voltage
1.72
1.17
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
voltage
VT(TO)2 High level value of threshold
voltage
1.22
0.92
0.83
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST203C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max., VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.8
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
20
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST203C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
40
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST203C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max., rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST203C..C Series
Bulletin I25176 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST203C..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
case to heatsink
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
Ordering Information Table
Device Code
ST 20
3
C
12
C
H
H
1
3
7
1
2
4
5
6
8
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- C = Ceramic Puk
- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
- C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
- Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100 200 400
- t code
q
20
25
30
CK
CJ
CH
DK
DJ
DH
EK
EJ
EH
--
FJ *
FH
--
--
HH
t (µs)
q
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Critical dv/dt:
None = 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
L
4
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ST203C..C Series
Bulletin I25176 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25° 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
1 30
ST 2 03C ..C S eries
(Sin g le S id e C o oled )
ST203C..C Series
(Single Side Cooled)
1 20
1 10
1 00
9 0
R
(D C ) = 0.17 K /W
R
(DC) = 0.17 K/W
thJ-h s
thJ-h s
C ondu ction Angle
8 0
Cond uction P eriod
7 0
80
30°
6 0
60°
70
30 °
90°
5 0
60°
60
120°
90 °
4 0
50
180°
120°
3 0
180°
D C
40
0
2 0
50
100
150
200
250
0
50
1 00 15 0 20 0 2 5 0 3 0 0 3 50 4 00
Average On-state Current (A)
A ve ra g e O n -sta te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST203C..C Series
Bulletin I25176 rev. B 04/00
1 3 0
1 3 0
1 2 0
1 1 0
1 0 0
90
ST 203C ..C Se rie s
(D o ub le S id e C oo le d )
ST 20 3C ..C S eries
(D ou b le Sid e C o oled )
(D C ) 0.0 8 K /W
1 2 0
1 1 0
1 0 0
90
R
(D C ) = 0.08 K /W
R
=
thJ -hs
thJ-hs
C onduction An gle
C ondu ction P eriod
80
80
70
70
30°
60
60
60°
90°
50
50
3 0°
1 20°
60°
18 0°
40
40
180°
90°
30
30
1 20°
D C
20
20
0
0
1
1 00
2 00
3 0 0
4 0 0
50 0
0
1 0 0 20 0 30 0 40 0 5 00 6 00 70 0 8 00
Ave ra g e O n -sta te C u rren t (A )
A ve ra g e O n -sta te C u rre n t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 0 00
9 00
8 00
7 00
6 00
5 00
4 00
3 00
2 00
1 00
0
1400
1200
1000
800
600
400
200
0
DC
180°
120°
90°
60°
30°
180 °
120 °
90 °
60 °
30 °
R M S Lim it
RMS Limit
C ondu ction Period
ST203C..C Series
C ond uction Angle
S T2 03C ..C Se rie s
T = 125°C
T
=
12 5°C
J
J
5 0 1 00 15 0 2 00 2 5 0 3 00 35 0 40 0 45 0
A vera g e O n -sta te C u rre n t (A )
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
5000
4500
4000
3500
3000
2500
2000
5500
5000
4500
4000
3500
3000
2500
2000
At Any Rated Load Condition And With
M a xim u m N o n Re p e titive Su rg e C u rren t
V ersu s P u lse T ra in D ura tion . C o n tro l
O f C o n d u c tion M a y N ot Be M a in ta in e d .
Rated V
Applied Following Surge.
RR M
In itial T = 125°C
J
In itia l T
=
12 5°C
N o V o lta g e R e a pp lie d
R a te d R e a p p lied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
V
RRM
ST203C..C Series
S T2 03C ..C Se rie s
0.01
0.1
1
10
100
Numb er O f Eq ual Amplitud e Half C ycle C urrent Pulses (N)
P u lse T ra in D u ra tio n (s)
Fig. 7 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
Fig. 8 - Maximum Non-repetitive Surge Current
SingleandDoubleSideCooled
6
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ST203C..C Series
Bulletin I25176 rev. B 04/00
1
10000
1000
100
ST 203 C ..C S eries
ST203C..C Series
0 .1
Ste a d y Sta te V a lue
0.1 7 K /W
(S in g le Sid e C oo led )
0.0 8 K /W
R
=
th J- hs
0. 01
T
T
= 25°C
J
R
=
thJ-h s
= 125°C
J
(D ou b le S id e C oo led )
(D C O p er a tion )
0 .0 01
1
1.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
4.5
5
0 .00 1
0.0 1
0.1
1
10
S q u a re W a ve P u lse D u ratio n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
250
200
150
100
50
1 60
I
=
500 A
I
=
500 A
300 A
200 A
100 A
50 A
TM
TM
ST203C..C Series
1 40
1 20
1 00
8 0
T
= 125 °C
J
300 A
200 A
100 A
6 0
50 A
4 0
ST 203C ..C S eries
125 ° C
2 0
T
=
J
0
0
0
20
40
60
80
100
0
2 0
4 0
6 0
80
1 00
Rate Of Fall Of On-state Current - di/dt (A/µs)
R a te O f F a ll O f F orw a rd C u rre n t - d i/d t (A /µ s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1 E4
1 E3
1 E2
Sn ubber circuit
Snubb er circuit
R
= 47 ohms
s
R
C
V
= 47 ohms
= 0.22 µF
= 80% V
s
s
C
V
=
=
0.22 µF
s
80%
V
D
D
DRM
DR M
50 Hz
200
100
400
1000 500
50 Hz
200 100
400
500
1000
1500
1500
2500
3000
5000
2500
3000
5000
ST203C ..C Series
Sin usoidal pulse
= 55°C
ST203C..C Series
Sinusoid al p ulse
T
T
= 40°C
C
tp
tp
C
10000
10000
1 E1
1E2
1 E3
1E14E41 E11E1
1 E2
1 E3
1E4
P u lse Ba se w id th (µ s)
P u lse Ba sew id th (µ s)
Fig. 13 - Frequency Characteristics
7
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ST203C..C Series
Bulletin I25176 rev. B 04/00
1 E4
Snub ber circu it
Snub ber circuit
R
C
V
= 22 ohms
= 0.15 µF
= 80% V
s
R
C
= 47 ohms
= 0.22 µ F
s
s
s
V
= 80% V
D
D
DRM
DR M
50 Hz
200 100
400
50 Hz
1 E3
1 E2
1 E1
1000
100
200
400
500
1000
1500
500
2500
1500
2500
3000
5000
3000
5000
ST203C..C Series
Trap ezoida l pulse
10000
ST0203C ..C Series
Tra pezoid al p ulse
10000
T
= 55°C
C
T
= 40°C
tp
C
di/d t = 50A/µs
tp
di/d t = 50A/µs
1 E1
1E2
Pu lse B a sew idth (µ s)
1E3
1E14E4 11E1
1E2
1E3
1E4
P u lse Ba sew id th (µs)
Fig. 14 - Frequency Characteristics
1E4
1E3
1E2
1E1
Snubber circuit
Sn ubber circuit
R
C
= 47 ohms
= 0.22 µF
R
C
V
= 47 ohms
= 0.22 µF
s
s
s
s
V
= 80%
V
= 80% V
D
DRM
DRM
D
50 Hz
100
200
50 Hz
400
100
200
500
400
1000
500
1000
1500
1500
2500
2500
3000
3000
5000
5000
ST203C..C Series
Sin usoidal pulse
ST203C..C Series
Trapezoid al pulse
10000
T
= 40°C
C
10000
tp
di/dt = 100A/µs
T
= 55°C
C
tp
di/d t = 100A/µs
1E1
1E2
1 E3
1E14
1E1
1E2
1E3
1E4
Pu lse B asew id th (µs)
Pu lse B ase w id th (µ s)
Fig. 15 - Frequency Characteristics
1E5
1E4
1E3
1E2
1E1
ST203C..C Series
Rectangula r pulse
di/dt = 50A/µs
tp
20 joules per pulse
20 jou les per pulse
10
4
10
2
5
1
3
0.5
2
1
0.3
0.5
0.2
0.3
0.2
0.1
0.1
ST203C ..C Series
Sin usoid al p ulse
tp
1E1
1E4
1 E4
1E2
1E3
1E4
1E1
1E2
1 E3
P u lse B a sew id th (µ s)
Pu lse B a sew id th (µ s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST203C..C Series
Bulletin I25176 rev. B 04/00
1 00
1 0
1
Re cta n g ula r g a te p u lse
(1) P G M = 1 0W , tp
(2) P G M = 2 0W , tp
(3) P G M = 4 0W , tp
(4) P G M = 6 0W , tp
=
=
=
=
20 m s
10 m s
5m s
a ) R ec om m en d e d lo a d lin e fo r
ra ted d i/d t : 20V , 10o h m s; tr< =1 µ s
b ) Re co m m en d ed loa d lin e f or
< = 30% ra te d d i/d t : 10 V , 10o h m s
tr< =1 µ s
3.3m s
(a )
(b )
(2)
(1)
(3 ) (4)
V G D
IG D
De vice : ST 203C ..C Se rie s Freq u en cy Lim ite d b y P G (A V )
0 .1 1 0 1 00
0.1
0.0 01
0.0 1
1
In sta n ta n e ou s G ate C u rr en t (A )
Fig. 17 - Gate Characteristics
9
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