ST203C [INFINEON]
INVERTER GRADE THYRISTORS Hockey Puk Version; 逆变器GRADE闸流体曲棍球北辰版本
| 型号： | ST203C |
| 厂家： | 
Infineon |
| 描述： | INVERTER GRADE THYRISTORS Hockey Puk Version |
| 文件： | 总10页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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76/A
ST203C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
370A
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
case style TO-200AB (A-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST203C..C
Units
370
55
A
°C
@ T
hs
hs
IT(RMS)
ITSM
I2t
700
25
A
@ T
°C
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5260
5510
138
126
A
A
KA2s
KA2s
V
DRM/VRRM
1000 to 1200
20 to 30
V
t range
µs
q
TJ
- 40 to 125
°C
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ST2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
repetitive peak voltage
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST203C..C
non-repetitive peak voltage
V
V
10
12
1000
1200
1100
1300
40
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
180oel
860
840
700
430
50
100µs
5620
2940
1750
910
50
50Hz
400Hz
750
706
1340
1400
1160
1220
5020
2590
1000Hz
580
340
50
1350
980
50
1170
830
50
1520
780
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
VDRM
VDRM
VDRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/µs
40
55
40
55
°C
Equivalent values for RC circuit
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
ST203C..C
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
370 (140)
55 (85)
700
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
5260
5510
4420
4630
138
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
126
KA2s
98
89
I2√t
Maximum I2√t for fusing
1380
KA2√s t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Fig. 4 - Current Ratings Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 8 - Maximum Non-repetitive Surge Current
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eries
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
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Fig. 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
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Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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Fig. 17 - Gate Characteristics
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On-state Conduction
Parameter
ST203C..C Units Conditions
VTM
Max. peak on-state voltage
1.72
ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.17
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.22
r
Low level value of forward
slope resistance
1
t
0.92
0.83
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
Typical latching current
600
TJ = 25°C, IT > 30A
mA
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST203C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max., VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.8
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
t
Max. turn-off time
20
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST203C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
40
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST203C..C Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max., rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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ST203C erie
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Thermal and Mechanical Specification
Parameter
ST203C..C
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.17
0.08
DC operation single side cooled
K/W
K/W
DC operation double side cooled
R
thC-hs Max. thermal resistance,
case to heatsink
0.033
0.017
4900
(500)
50
DC operation single side cooled
DC operation double side cooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AB (A-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.015
0.018
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
60°
30°
Ordering Information Table
Device Code
ST 20
3
C
12
C
H
H
1
3
7
1
2
4
5
6
8
9
10
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100
200 400
8 - t code
20
25
30
CK
CJ
CH
DK
DJ
DH
EK
EJ
EH
--
FJ *
FH
--
--
HH
q
t (µs)
q
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
*Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
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Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
0.3 (0.01) MIN.
DIA. MAX.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
DIA. MAX.
38 (1.50) DIA MAX.
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
42 (1.65) MAX.
28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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