ST2100C38R3PBF [INFINEON]
Silicon Controlled Rectifier, 3850A I(T)RMS, 3800V V(DRM), 3800V V(RRM), 1 Element, RPUK-2;
| 型号： | ST2100C38R3PBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 3850A I(T)RMS, 3800V V(DRM), 3800V V(RRM), 1 Element, RPUK-2 栅 栅极 |
| 文件： | 总6页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25198 rev. B 02/00
ST2100C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
2090A
Double side cooling
High surge capability
High mean current
Fatigue free
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST2100C..R
Units
1770
80
A
°C
A
@ TC
IT(AV)
2090
55
@ T
°C
A
hs
IT(RMS)
3850
@ T
25
°C
A
hs
ITSM
@ 50Hz
@ 60Hz
36250
38000
A
I2t
@ 50Hz
@ 60Hz
6570
KA2s
5990
3000 to 4200
500
KA2s
V
VDRM/VRRM
t
typical
max.
µs
q
TJ
125
°C
1
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
peak and off-state voltage
V
repetitive peak voltage
V
@ T = 125°C
CmA
30
32
3000
3200
3100
3300
34
36
3400
3600
3500
3700
ST2100C..R
250
38
40
3800
4000
3900
4100
42
4200
4300
On-state Conduction
Parameter
ST2100C..R
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
1770 (1150)
80
A
°C
A
180° conduction, half sine wave
IT(AV) Max. average on-state current
2090 (940)
double side (single side [anode side]) cooled
@ Heatsink temperature
55 (85)
3850
°C
IT(RMS) Max. RMS on-state current
A
DC @ 25°C heatsink temperature double side cooled
36250
38000
29000
30350
6570
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
TJ = TJ max.
ITSM
Max. peak, one-cycle
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
I2t
Maximum I2t for fusing
Initial TC = 125°C
5990
KA2s
4205
3820
VT(TO) Max. value of threshold voltage
1.03
V
rt
Max. value of on-state slope
resistance
mΩ
0.32
TJ = TJ max.
VTM
IL
Max. on-state voltage
Typical latching current
1.875
300
V
I = 2900A, TC = 25°C
pk
mA
TJ = 25°C, VD = 5V
Switching
Parameter
ST2100C..R
150 (300)
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% VDRM to 1000A gate drive 20V, 10Ω, t = 0.5µs
r
A/µs
TJ = TJ max.
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C
d
t
Maximum delay time
Typical turn-off time
2.5
d
Rise time 0.5µs
µs
IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
500
q
dIRR/dt = 2A/µs, VDR =67% VDRM,dVDR/dt = 8V/µs linear
2
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Blocking
Parameter
ST2100C..R
500
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
250
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
ST2100C..R
Units Conditions
= 100µs
PGM
150
10
t
p
W
IGM
Max. peak positive gate current
Max. peak positive gate voltage
30
A
V
V
Anode positive with respect to cathode
Anode positive with respect to cathode
Anode positive with respect to cathode
VGM
30
-VGM Max. peak negative gate voltage
0.25
IGT
Maximum DC gate current
required to trigger
400
4
mA
V
TC = 25°C, VDRM = 5V
TC = 25°C, VDRM = 5V
VGT
Maximum gate voltage required
to trigger
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
Thermal and Mechanical Specification
Parameter
ST2100C..R
Units Conditions
On-state (conducting)
TJ max. Max. operating temperature
125
°C
T
Max. storage temperature range
-55 to 125
stg
RthJ-C Thermal resistance, junction
to case
0.019
DC operation single side cooled
DC operation double side cooled
K/W
K/W
0.0095
Rth(C-h) Thermal resistance, case
to heatsink
0.004
0.002
Singlesidecooled
Double side cooled
Clamping force 43KN with
mounting compound
43000
(4400)
N
F
Mounting force 10%
(Kg)
wt
Approximate weight
Case style
1600
g
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
0.0010
Double side
0.0010
Units
Conditions
TJ = TJ max.
180°
120°
60°
0.0017
0.0017
K/W
0.0044
0.0044
3
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
Ordering Information Table
Device Code
ST 210
0
C
42
R
1
7
1
2
3
5
6
8
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
R = Puk Case
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
CATHODE
20° 5°
)
4
2
.
0
(
3
.
6
(R-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
4
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
130
120
110
100
90
130
120
110
100
90
ST2100C..R Series
(Double Side Cooled)
ST2100C..R Series
(Single Side Cooled)
R
(DC) = 0.0115 K/W
R
(DC) = 0.023 K/W
thJ-hs
thJ-hs
Conduction Angle
Conduction Angle
80
80
70
70
60
60
60˚
120˚
50
50
60˚
180˚
120˚
40
40
180˚
DC
30
30
DC
20
20
0
500 1000 1500 2000 2500
0
1000
2000
3000
4000
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
10000
1000
100
DC
180˚
120˚
60˚
T = 125˚C
J
RMS Limit
Conduction Angle
ST2100C..R Series
ST2100C..R Series
T
= 125˚C
J
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
1000
2000
3000
4000
Average On-state Current (A)
Average On-state Voltage (V)
Fig. 3- On-state Power Loss Characteristics
Fig. 4- On-state VoltageDrop Characteristics
35000
30000
25000
20000
15000
10000
5000
60000
55000
50000
45000
40000
35000
30000
25000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
50% Rated V
Applied Following Surge
RRM
Initial T = 125˚C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125˚C
J
50% Rated V
Reapplied
RRM
ST2100C..R Series
ST2100C..R Series
1
10
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5
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ST2100C..R Series
Bulletin I25198 rev. B 02/00
100000
T
= 125˚C
J
I
T
d
I
T
d
t
t
I
= 2000A
T
= s
3m
t
p
Q
rr
10000
(
I REC)
RM
ST2100C..R Series
10
1000
0.1
1
100
Rate Of Decay Of On-state Current - di/dt (A/µs)
Fig. 7 - Stored Charged
0.1
0.01
ST2100C..R Series
Steady State Value
= 0.019 K/W
R
thJ-C
(Single Side Cooled)
= 0.0095 K/W
0.001
0.0001
R
thJ-C
(Double Side Cooled)
(DC Operation)
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
10
1
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
(6) PGM =100W
(6)
(3)
(5)
(4)
(2)
(1)
VGD
IGD
Device: ST2100C..R Series
Frequency Limited by PG(AV)
1
0.1
0.001
0.01
0.1
10
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
6
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