ST230S04M0V [INFINEON]
Silicon Controlled Rectifier, 361 A, 400 V, SCR, DO-209AB, TO-209AB, 3 PIN;
| 型号： | ST230S04M0V |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 361 A, 400 V, SCR, DO-209AB, TO-209AB, 3 PIN |
| 文件： | 总9页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25163 rev. B 01/94
ST230S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
230A
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
ST230S
230
Units
A
@ TC
85
°C
IT(RMS)
ITSM
360
A
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
5700
5970
163
A
A
I2t
KA2s
KA2s
149
V
DRM/VRRM
400 to 1600
100
V
case style
t
typical
µs
q
TO-209AB (TO-93)
TJ
- 40 to 125
°C
1
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ST230S Series
Bulletin I25163 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
ST230S
peak and off-state voltage
V
repetitive peak voltage
V
@ T = T max
J mAJ
04
08
12
14
16
400
800
500
900
1200
1400
1600
1300
1500
1700
30
On-state Conduction
Parameter
ST230S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
230
85
A
°C
A
180° conduction, half sine wave
IT(RMS) Max. RMS on-state current
360
DC @ 78°C case temperature
ITSM
Max. peak, one-cycle
5700
5970
4800
5000
163
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
148
KA2s
115
105
I2√t
Maximum I2√t for fusing
1630
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
0.92
0.98
0.88
0.81
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO)2 High level value of threshold
voltage
(I > π x IT(AV)),TJ = TJ max.
r
Low level value of on-state
slope resistance
t1
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of on-state
slope resistance
t2
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.55
600
V
I = 720A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Max. (typical) latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000 (300)
Switching
Parameter
ST230S
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
TJ = TJ max, anode voltage≤ 80% VDRM
r
1000
1.0
A/µs
µs
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
d
V
= 0.67% VDRM, TJ = 25°C
d
I
TM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
t
Typical turn-off time
100
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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ST230S Series
Bulletin I25163 rev. B 01/94
Blocking
Parameter
ST230S
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM
IRRM
Max. peak reverse and off-state
leakage current
30
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST230S
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
-
IGT
DC gate current required
to trigger
TJ = - 40°C
180
90
mA TJ = 25°C
TJ = 125°C
150
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
40
-
-
VGT
DC gate voltage required
to trigger
TJ = - 40°C
2.9
1.8
1.2
V
TJ = 25°C
J = 125°C
3.0
-
T
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST230S
-40 to 125
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 150
stg
RthJC Max. thermal resistance,
junction to case
0.10
DC operation
K/W
RthCS Max. thermal resistance,
0.04
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
31
Non lubricated threads
(275)
24.5
(210)
280
Nm
(lbf-in)
Lubricated threads
wt
Approximate weight
Case style
g
TO - 209AB (TO-93)
See Outline Table
3
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ST230S Series
Bulletin I25163 rev. B 01/94
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
60°
30°
Ordering Information Table
Device Code
ST 23
0
S
16
P
0
7
8
9
1
2
3
5
6
4
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
P = Stud base 16UNF threads
M = Stud base metric threads (M16 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
V = Glass-metal seal (only up to 1200V)
8
9
-
-
None = Ceramic housing (over 1200V)
Critical dv/dt: None = 500V/µsec (Standard selection)
L
= 1000V/µsec (Special selection)
4
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ST230S Series
Bulletin I25163 rev. B 01/94
Outline Table
GLASS METAL SEAL
19 (0.75) MAX.
8.5 (0.33) DIA.
4 (0.16) MAX.
4.3 (0.17) DIA.
FLEXIBLE LEAD
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
Fast-on Terminals
2
C.S. 0.4mm
(0.0006 s.i.)
AMP. 280000-1
REF-250
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
28.5 (1.12) MAX. DIA.
SW 32
3/4"-16UNF-2A *
35 (1.38) MAX.
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
.
8.5 (0.33) DIA.
N
MI
)
7
4.3 (0.17) DIA.
3
.
0
(
.
5
.
N
9
MI
)
6
8
FLEXIBLE LEAD
.
0
(
2
2
2
C.S. 25mm
(0.039 s.i.)
RED SILICON RUBBER
RED CATHODE
2
C.S. 0.4mm
(0.0006 s.i.)
WHITE GATE
+I
+
220 (8.66) 10 (0.39)
-
RED SHRINK
WHITE SHRINK
27.5 (1.08) MAX. DIA.
SW 32
3/4"-16UNF-2A *
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
5
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ST230S Series
Bulletin I25163 rev. B 01/94
Outline Table
GLASS-METAL SEAL
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 28.5 (1.12) MAX.
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
3 (0.12)
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
6
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ST230S Series
Bulletin I25163 rev. B 01/94
130
120
110
100
90
130
120
110
100
90
ST230S Se rie s
ST230S Se rie s
(DC ) = 0.1 K/ W
R
(DC) = 0.1 K/ W
R
th JC
thJC
C on d u ction Pe rio d
Co n d uc tio n An g le
30°
60°
80
90°
120°
90°
120°
60°
DC
30°
100
180°
180°
80
70
0
50
150
200
250
0
100
200
300
400
Ave ra g e On -sta te C urre n t (A)
Ave ra g e On -sta te C urre nt (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
180°
0
0
.
120°
90°
60°
.
1
K
1
300
6
/
K
W
/
W
250
30°
0
.
3
K
/
W
RMS Lim it
200
150
100
50
0
.
4
K
/
W
Co nd u ction Ang le
0
.
8
K
/
W
ST230S Se rie s
T
J
= 125°C
0
0
50
100
150
200
250
50
75
100
125
Ma ximum Allow a b le Amb ie nt Te mp e ra ture (°C )
Ave ra g e O n-sta te C urre nt (A)
Fig. 3 - On-state Power Loss Characteristics
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
0
.
1
K
/
W
0
.
2
K
/
W
0
0
0
.
.
3
4
K
/
W
W
W
RMS Lim it
K
/
C o nd u ctio n Pe rio d
.5
K
/
0
.
8
K
/
W
ST230S Se rie s
T
= 125°C
1
.2
J
K
/W
0
0
50 100 150 200 250 300 350
4
0
0
50
75
100
125
Ave ra g e O n-sta te C urre nt (A)
Ma xim um Allow a b le Am b ie n t Te mp e ra ture (°C )
Fig. 4 - On-state Power Loss Characteristics
7
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ST230S Series
Bulletin I25163 rev. B 01/94
5500
6000
5500
5000
4500
4000
3500
3000
2500
2000
At Any Ra te d Lo a d Co nd ition An d With
Ma xim um No n Re p e titive Surg e C urre nt
Ve rsus Pulse Tra in Dura tio n. C o ntrol
Of C o nd uc tion Ma y No t Be Ma inta in e d .
Ra te d V
Ap p lie d Fo llo win g Surg e .
RRM
5000
4500
4000
3500
3000
2500
2000
Initia l T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
In itia l T = 125°C
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
ST230S Se rie s
ST230S Se rie s
1
10
100
0.01
0.1
1
Numb er Of Eq ua l Amp litud e Ha lf C yc le Curren t Pulses (N)
Pulse Tra in Dura tio n (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
T = 125°C
J
1000
ST230S Se rie s
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Insta n ta ne ous On-sta te Vo lta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue
= 0.1 K/ W
R
thJC
(DC Op e ra tion )
0.1
0.01
ST230S Se rie s
0.001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
8
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ST230S Series
Bulletin I25163 rev. B 01/94
100
10
1
Re c ta ng ula r g a te p ulse
(1) PGM = 10W, tp = 4ms
a ) Re c o mme nd e d loa d line fo r
ra te d d i/d t : 20V, 10oh ms; tr<=1 µs
b ) Re c omme nd e d loa d line for
<=30% ra te d di/d t : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a )
(b )
(1) (2) (3) (4)
VGD
IGD
De vic e : ST230S Se rie s
0.1
Fre q ue nc y Limite d b y PG(AV)
0.1
0.001
0.01
1
10
100
Insta nta ne o us Ga te Curre nt (A)
Fig. 9 - Gate Characteristics
9
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