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ST2600C22R0 [INFINEON]

Silicon Controlled Rectifier, 4800A I(T)RMS, 2200000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, RPUK-2;
ST2600C22R0
型号： ST2600C22R0
厂家： Infineon    Infineon
描述：

Silicon Controlled Rectifier, 4800A I(T)RMS, 2200000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, RPUK-2

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Previous Datasheet  
Index  
Next Data Sheet  
Bulletin I25199/A  
ST2600C..R SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
2630A  
Double side cooling  
High surge capability  
High mean current  
Fatigue free  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
(R-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST2600C..R  
Units  
2220  
80  
A
°C  
A
@ TC  
IT(AV)  
2630  
55  
@ T  
°C  
A
hs  
IT(RMS)  
4800  
@ T  
25  
°C  
A
hs  
ITSM  
@ 50Hz  
@ 60Hz  
46000  
48200  
A
I2t  
@ 50Hz  
@ 60Hz  
10580  
KA2s  
9640  
2000 to 3000  
400  
KA2s  
V
V
DRM/VRRM  
t
typical  
max.  
µs  
q
TJ  
125  
°C  
D-419  
To Order  
 
Previous Datasheet  
Index  
Next Data Sheet  
ST2600C..R Series  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
Type number Code  
peak and off-state voltage  
V
repetitive peak voltage  
V
@ TC = 125°C  
mA  
20  
22  
2000  
2200  
2400  
2600  
2800  
3000  
2100  
2300  
2500  
2700  
2900  
3100  
24  
ST2600C..R  
250  
26  
28  
30  
On-state Conduction  
Parameter  
ST2600C..R Units Conditions  
12  
IT(AV) Max. average on-state current  
@ Case temperature  
2220 (1440)  
80  
A
°C  
180° conduction, half sine wave  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
2630 (1160)  
55 (85)  
A
°C  
A
double side (single side [anode side]) cooled  
IT(RMS) Max. RMS on-state current  
4800  
DC @ 25°C heatsink temperature double side cooled  
46000  
48200  
36800  
38500  
10580  
9640  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
TJ = TJ max.  
ITSM  
Max. peak, one-cycle  
No voltage  
reapplied  
50% VRRM  
reapplied  
No voltage  
reapplied  
50% VRRM  
reapplied  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TC = 125°C  
I2t  
Maximum I2t for fusing  
KA2s  
6770  
6150  
VT(TO) Max. value of threshold voltage  
0.89  
V
rt  
Max. value of on-state slope  
resistance  
mΩ  
0.19  
T
J = TJ max.  
= 2900A, TC = 25°C  
VTM  
IL  
Max. on-state voltage  
1.45  
V
I
pk  
Max. (typical) latching current  
300 (100)  
mA  
TJ = 25°C, VD = 5V  
2222222222222  
Switching  
Parameter  
ST2600C..R  
150 (300)  
Units Conditions  
di/dt Max. repetitive 50Hz (no repetitive)  
rate of rise of turned-on current  
From 67% VDRM gate drive 20V, 20Ω, t = 1µs  
r
A/µs  
TJ = TJ max.  
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C  
d
t
Maximum delay time  
Typical turn-off time  
2.0  
d
q
Rise time 0.5µs  
µs  
IT = 800A, t = 1ms, TJ = TJ max, VRM = 50V,  
p
t
400  
dIRR/dt = 20A/µs, VDR = 67% VDRM, dV/dt = 20V/µs linear  
D-420  
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Index  
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ST2600C..R Series  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
Fig. 4 - On-state Voltage Drop Characteristics  
Fig. 6 - Maximum Non-Repetitive Surge Current  
Fig. 3 - On-state Power Loss Characteristics  
Fig. 5 - Maximum Non-Repetitive Surge Current  
D-423  
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Index  
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ST2600C..R Series  
Fig. 7 - Stored Charged  
Fig. 8 - Thermal Impedance ZthJ-C Characteristics  
Fig. 9 - Gate Characteristics  
D-424  
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Index  
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ST2600C..R Series  
Blocking  
Parameter  
ST2600C..R  
Units Conditions  
V/µs TJ = TJ max. to 67% rated VDRM  
dv/dt Maximum linear rate of rise of  
off-state voltage  
500  
250  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
mA  
TJ = 125°C rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
ST2600C..R  
Units Conditions  
= 100µs  
PGM  
150  
10  
t
p
W
IGM  
Max. peak positive gate current  
Max. peak positive gate voltage  
Max. peak negative gate voltage  
30  
A
V
V
Anode positive with respect to cathode  
Anode positive with respect to cathode  
Anode negative with respect to cathode  
VGM  
-VGM  
IGT  
30  
0.25  
Maximum DC gate current  
required to trigger  
400  
4
mA  
V
TC = 25°C, VDRM = 5V  
VGT  
Maximum gate voltage required  
to trigger  
TC = 25°C, VDRM = 5V  
23  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VGD  
DC gate voltage not to trigger  
0.25  
V
TC = 125°C  
V
DRM anode-to-cathode applied  
Thermal and Mechanical Specification  
Parameter  
ST2600C..R  
Units Conditions  
TJ max. Max. operating temperature  
125  
On-state (conducting)  
°C  
T
Max. storage temperature range  
-55 to 125  
stg  
RthJ-C Thermal resistance, junction  
tocase  
0.019  
DCoperationsinglesidecooled  
DCoperationdoublesidecooled  
K/W  
K/W  
0.0095  
Rth(C-h) Thermal resistance, case  
toheatsink  
0.004  
0.002  
Singlesidecooled  
Doublesidecooled  
Clamping force 43KN with  
mounting compound  
43000  
(4400)  
N
F
Mounting force ± 10%  
(Kg)  
wt  
Approximate weight  
Case style  
1600  
g
(R-PUK)  
SeeOutlineTable  
∆RthJ-C Conduction  
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)  
Conduction angle  
Single side  
0.0010  
Double side  
0.0010  
Units  
K/W  
Conditions  
J = TJ max.  
180°  
120°  
60°  
T
0.0017  
0.0017  
0.0044  
0.0044  
D-4213333  
To Order  
Previous Datasheet  
Index  
Next Data Sheet  
ST2600C..R Series  
Ordering Information Table  
Device Code  
ST 260  
0
C
30  
R
1
7
8
1
5
2
3
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
R = Puk Case  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt: None = 500V/µsec (Standard selection)  
12  
8
-
L
= 1000V/µsec (Special selection)  
Outline Table  
112.5 (4.4) DIA. MAX.  
73.2 (2.9) DIA. MAX.  
TWO PLACES  
GATE  
1.5 (0.06) DIA.  
ANODE  
HOLE 1.5 (0.06)  
DIA. MAX.  
4.76 (0.2)  
2222222222222  
CATHODE  
20° ± 5°  
(R-PUK)  
All dimensions in millimeters (inches)  
3.7 (0.15) DIA. NOM. X  
2.1 (0.1) DEEP MIN.  
BOTH ENDS  
D-422  
To Order  

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