ST2600C26R0L [INFINEON]
Silicon Controlled Rectifier, 4800A I(T)RMS, 2200000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, RPUK-2;型号: | ST2600C26R0L |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 4800A I(T)RMS, 2200000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, RPUK-2 栅 栅极 |
文件: | 总6页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Bulletin I25199/A
ST2600C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
2630A
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST2600C..R
Units
2220
80
A
°C
A
@ TC
IT(AV)
2630
55
@ T
°C
A
hs
IT(RMS)
4800
@ T
25
°C
A
hs
ITSM
@ 50Hz
@ 60Hz
46000
48200
A
I2t
@ 50Hz
@ 60Hz
10580
KA2s
9640
2000 to 3000
400
KA2s
V
V
DRM/VRRM
t
typical
max.
µs
q
TJ
125
°C
D-419
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ST2600C..R Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number Code
peak and off-state voltage
V
repetitive peak voltage
V
@ TC = 125°C
mA
20
22
2000
2200
2400
2600
2800
3000
2100
2300
2500
2700
2900
3100
24
ST2600C..R
250
26
28
30
On-state Conduction
Parameter
ST2600C..R Units Conditions
12
IT(AV) Max. average on-state current
@ Case temperature
2220 (1440)
80
A
°C
180° conduction, half sine wave
IT(AV) Max. average on-state current
@ Heatsink temperature
2630 (1160)
55 (85)
A
°C
A
double side (single side [anode side]) cooled
IT(RMS) Max. RMS on-state current
4800
DC @ 25°C heatsink temperature double side cooled
46000
48200
36800
38500
10580
9640
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
TJ = TJ max.
ITSM
Max. peak, one-cycle
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TC = 125°C
I2t
Maximum I2t for fusing
KA2s
6770
6150
VT(TO) Max. value of threshold voltage
0.89
V
rt
Max. value of on-state slope
resistance
mΩ
0.19
T
J = TJ max.
= 2900A, TC = 25°C
VTM
IL
Max. on-state voltage
1.45
V
I
pk
Max. (typical) latching current
300 (100)
mA
TJ = 25°C, VD = 5V
2222222222222
Switching
Parameter
ST2600C..R
150 (300)
Units Conditions
di/dt Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% VDRM gate drive 20V, 20Ω, t = 1µs
r
A/µs
TJ = TJ max.
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C
d
t
Maximum delay time
Typical turn-off time
2.0
d
q
Rise time 0.5µs
µs
IT = 800A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
400
dIRR/dt = 20A/µs, VDR = 67% VDRM, dV/dt = 20V/µs linear
D-420
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ST2600C..R Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-state Voltage Drop Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
D-423
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ST2600C..R Series
Fig. 7 - Stored Charged
Fig. 8 - Thermal Impedance ZthJ-C Characteristics
Fig. 9 - Gate Characteristics
D-424
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ST2600C..R Series
Blocking
Parameter
ST2600C..R
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
dv/dt Maximum linear rate of rise of
off-state voltage
500
250
IRRM
IDRM
Max. peak reverse and off-state
leakage current
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
ST2600C..R
Units Conditions
= 100µs
PGM
150
10
t
p
W
IGM
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
30
A
V
V
Anode positive with respect to cathode
Anode positive with respect to cathode
Anode negative with respect to cathode
VGM
-VGM
IGT
30
0.25
Maximum DC gate current
required to trigger
400
4
mA
V
TC = 25°C, VDRM = 5V
VGT
Maximum gate voltage required
to trigger
TC = 25°C, VDRM = 5V
23
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
V
DRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST2600C..R
Units Conditions
TJ max. Max. operating temperature
125
On-state (conducting)
°C
T
Max. storage temperature range
-55 to 125
stg
RthJ-C Thermal resistance, junction
tocase
0.019
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
0.0095
Rth(C-h) Thermal resistance, case
toheatsink
0.004
0.002
Singlesidecooled
Doublesidecooled
Clamping force 43KN with
mounting compound
43000
(4400)
N
F
Mounting force ± 10%
(Kg)
wt
Approximate weight
Case style
1600
g
(R-PUK)
SeeOutlineTable
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
0.0010
Double side
0.0010
Units
K/W
Conditions
J = TJ max.
180°
120°
60°
T
0.0017
0.0017
0.0044
0.0044
D-4213333
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ST2600C..R Series
Ordering Information Table
Device Code
ST 260
0
C
30
R
1
7
8
1
5
2
3
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
R = Puk Case
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
12
8
-
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
2222222222222
CATHODE
20° ± 5°
(R-PUK)
All dimensions in millimeters (inches)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
D-422
To Order
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