ST280CH04C3L [INFINEON]

Silicon Controlled Rectifier, 1130A I(T)RMS, 185000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2;
ST280CH04C3L
型号: ST280CH04C3L
厂家: Infineon    Infineon
描述:

Silicon Controlled Rectifier, 1130A I(T)RMS, 185000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, APUK-2

栅 栅极
文件: 总7页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Bulletin I25160 rev. C 02/00  
ST280CH..C SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
500A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AB (A-PUK)  
Extended temperature range  
TypicalApplications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AB (A-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST280CH..C  
Units  
500  
80  
A
°C  
@ T  
hs  
IT(RMS)  
1130  
25  
A
@ T  
°C  
hs  
ITSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
7200  
7500  
260  
230  
A
A
I2t  
KA2s  
KA2s  
VDRM/VRRM  
400 to 600  
100  
V
t
typical  
µs  
q
TJ  
- 40 to 150  
°C  
1
www.irf.com  
ST280CH..C Series  
Bulletin I25160 rev. C 02/00  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
V
DRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = TJ max  
mA  
Type number Code  
peak and off-state voltage  
repetitive peak voltage  
V
V
04  
400  
600  
500  
700  
ST280CH..C  
06  
75  
On-state Conduction  
Parameter  
ST280CH..C  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
500 (185)  
80 (110)  
1130  
A
180° conduction, half sine wave  
°C  
double side (single side) cooled  
IT(RMS) Max. RMS on-state current  
DC @ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
ITSM  
Max. peak, one-cycle  
7200  
7500  
6000  
6300  
260  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
235  
KA2s  
180  
165  
I2t  
Maximum I2t for fusing  
2600  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
0.84  
0.88  
0.50  
0.47  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
slope resistance  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
VTM  
IH  
Max. on-state voltage  
1.35  
600  
V
I = 1000A, TJ = TJ max, t = 10ms sine pulse  
pk p  
Maximum holding current  
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
Max (typical) latching current  
1000 (300)  
Switching  
Parameter  
ST280CH..C  
1000  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
A/µs  
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.0  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
I
TM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V  
t
Typical turn-off time  
100  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
2
www.irf.com  
ST280CH..C Series  
Bulletin I25160 rev. C 02/00  
Blocking  
Parameter  
ST280CH..C  
500  
Units Conditions  
V/µs TJ = TJ max. linear to 80% rated VDRM  
mA TJ = TJ max, rated VDRM/VRRM applied  
dv/dt Maximum critical rate of rise of  
off-state voltage  
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
75  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST280CH..C  
Units Conditions  
PGM  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
180  
MAX.  
-
TJ = - 40°C  
IGT  
DC gate current required  
to trigger  
90  
30  
150  
mA TJ = 25°C  
TJ = 150°C  
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
-
-
2.9  
1.8  
1.0  
TJ = - 40°C  
VGT  
DC gate voltage required  
to trigger  
3.0  
-
V
TJ = 25°C  
TJ = 150°C  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
0.30  
mA  
V
TJ = TJ max  
VGD  
Thermal and Mechanical Specification  
Parameter  
ST280CH..C  
Units Conditions  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 150  
-40 to 150  
°C  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.17  
0.08  
DC operation single side cooled  
DC operation double side cooled  
K/W  
K/W  
RthC-hs Max. thermal resistance,  
case to heatsink  
0.033  
0.017  
4900  
(500)  
50  
DC operation single side cooled  
DC operation double side cooled  
F
Mounting force, 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AB (A-PUK)  
See Outline Table  
3
www.irf.com  
ST280CH..C Series  
Bulletin I25160 rev. C 02/00  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
Conditions  
J = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.016  
0.019  
0.024  
0.035  
0.060  
0.017  
0.019  
0.024  
0.035  
0.060  
0.011  
0.019  
0.026  
0.036  
0.060  
0.011  
0.019  
0.026  
0.037  
0.061  
T
K/W  
60°  
30°  
Ordering Information Table  
Device Code  
ST 28  
0
CH 06  
C
1
7
8
1
2
3
5
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
CH = Ceramic Puk, High temperature  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
C = Puk Case TO-200AB (A-PUK)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt: None = 500V/µsec (Standard selection)  
8
-
L
= 1000V/µsec (Special selection)  
4
www.irf.com  
ST280CH..C Series  
Bulletin I25160 rev. C 02/00  
Outline Table  
ANODE TO GATE  
CREEPAGE DISTANCE: 7.62 (0.30) MIN.  
STRIKE DISTANCE: 7.12 (0.28) MIN.  
19 (0.75)  
0.3 (0.01) MIN.  
DIA. MAX.  
13.7 / 14.4  
(0.54 / 0.57)  
0.3 (0.01) MIN.  
19 (0.75)  
GATE TERM. FOR  
1.47 (0.06) DIA.  
PIN RECEPTACLE  
DIA. MAX.  
38 (1.50) DIA MAX.  
2 HOLES 3.56 (0.14) x  
1.83 (0.07) MIN. DEEP  
6.5 (0.26)  
4.75 (0.19)  
Case Style TO-200AB (A-PUK)  
All dimensions in millimeters (inches)  
25° 5°  
Quote between upper and lower  
pole pieces has to be considered  
after application of Mounting Force  
(see Thermal and Mechanical  
Specification)  
42 (1.65) MAX.  
28 (1.10)  
150  
140  
130  
120  
110  
100  
150  
140  
130  
120  
110  
100  
90  
ST280CH..C Series  
(Single Side Cooled)  
ST280CH..C Series  
(Single Side Cooled)  
R
(DC) = 0.17 K/W  
R
(DC) = 0.17 K/W  
thJ-hs  
thJ-hs  
Conduction Angle  
Conduction Period  
80  
70  
60  
50  
40  
30  
20  
0
30˚  
90  
80  
70  
60  
50  
40  
60˚  
30˚  
90˚  
60˚  
120˚  
90˚  
120˚  
180˚  
DC  
180˚  
0
100  
200  
300  
400  
500  
100 200 300 400 500 600 700  
AverageOn-stateCurrent(A)  
AverageOn-stateCurrent(A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
5
www.irf.com  
ST280C..H Series  
Bulletin I25160 rev. C 02/00  
150  
150  
140  
130  
120  
110  
100  
90  
ST280CH..C Series  
(Double Side Cooled)  
ST280CH..C Series  
(Double Side Cooled)  
140  
130  
120  
110  
100  
90  
R
(DC) = 0.08 K/W  
R
(DC) = 0.08 K/W  
thJ-hs  
thJ-hs  
Conduction Angle  
Conduction Period  
80  
70  
80  
70  
30˚  
30˚  
60˚  
60˚  
90˚  
60  
60  
90˚  
120˚  
120˚  
50  
40  
50  
40  
180˚  
180˚  
30  
30  
DC  
20  
20  
0
100 200 300 400 500 600 700 800  
0
200 400 600 800 1000 1200  
AverageOn-stateCurrent(A)  
Average On-state Current (A)  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
1300  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1800  
1600  
1400  
1200  
1000  
800  
DC  
180˚  
120˚  
90˚  
60˚  
30˚  
180˚  
120˚  
90˚  
60˚  
30˚  
RMS Limit  
RMS Limit  
600  
Conduction Period  
Conduction Angle  
400  
ST280CH..C Series  
ST280CH..C Series  
T
= 150˚C  
T
= 150˚C  
200  
J
J
0
0
100 200 300 400 500 600 700 800  
Average On-state Current (A)  
0
200 400 600 800 1000 1200  
Average On-state Current (A)  
Fig. 6- On-state Power Loss Characteristics  
Fig. 5- On-state Power Loss Characteristics  
6500  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
7500  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
2500  
At Any Rated Load Condition And With  
Maximum Non Repetitive Surge Current  
Versus Pulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
Rated V  
Applied Following Surge.  
RRM  
Initial T = 150˚C  
J
Initial T = 150˚C  
J
@ 60 Hz 0.0083 s  
No Voltage Reapplied  
@ 50 Hz 0.0100 s  
Rated V  
Reapplied  
RRM  
ST280CH..C Series  
ST280CH..C Series  
1
10  
100  
0.01  
0.1  
Pulse Train Duration (s)  
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
6
www.irf.com  
ST280C..H Series  
Bulletin I25160 rev. C 02/00  
Instantaneous On-state Voltage (V)  
Fig. 9 - On-state Voltage Drop Characteristics  
Square Wave Pulse Duration (s)  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
Instantaneous Gate Current (A)  
Fig. 11 - Gate Characteristics  
7
www.irf.com  

相关型号:

ST280CH04C3LPBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH04C3PBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C0

Silicon Controlled Rectifier, 1130A I(T)RMS, 185000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, EPUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
INFINEON

ST280CH06C0L

Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM)

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C0L

Silicon Controlled Rectifier, 1130A I(T)RMS, 185000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
INFINEON

ST280CH06C0LPBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C0PBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C1

Silicon Controlled Rectifier, 1130A I(T)RMS, 185000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, EPUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
INFINEON

ST280CH06C1-PBF

Phase Control Thyristors (Hockey PUK Version), 500 A

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C1L

Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM)

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C1LPBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

ST280CH06C1PBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY