ST300C04L1 [INFINEON]

Silicon Controlled Rectifier, 1115A I(T)RMS, 560000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, BPUK-2;
ST300C04L1
型号: ST300C04L1
厂家: Infineon    Infineon
描述:

Silicon Controlled Rectifier, 1115A I(T)RMS, 560000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, BPUK-2

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文件: 总8页 (文件大小:176K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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Index  
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DISCRETE POWER DIODES and THYRISTORS  
DATA BOOK  
D-310  
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Index  
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Bulletin I25193/A  
ST300C..L SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
560A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AC (B-PUK)  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AC (B-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST300C..L  
Units  
560  
55  
A
°C  
@ T  
hs  
IT(RMS)  
ITSM  
I2t  
1115  
25  
A
@ T  
°C  
hs  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
8000  
8380  
320  
292  
A
A
KA2s  
KA2s  
V
DRM/VRRM  
400 to 2000  
100  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
D-311  
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ST300C..L Series  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = TJ max  
mA  
Type number  
Code  
peak and off-state voltage  
repetitive peak voltage  
V
V
04  
08  
12  
16  
18  
20  
400  
500  
800  
900  
1200  
1600  
1800  
2000  
1300  
1700  
1900  
2100  
ST300C..L  
50  
12  
On-state Conduction  
Parameter  
ST300C..L  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
560 (275)  
55 (75)  
A
180° conduction, half sine wave  
double side (single side) cooled  
°C  
IT(RMS) Max. RMS on-state current  
1115  
8000  
8380  
6730  
7040  
320  
DC @ 25°C heatsink temperature double side cooled  
ITSM  
Max. peak, one-cycle  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
No voltage  
reapplied  
non-repetitive surge current  
A
100% VRRM  
reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
No voltage  
reapplied  
292  
KA2s  
226  
100% VRRM  
207  
reapplied  
I2t  
Maximum I2t for fusing  
3200  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
0.97  
0.98  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
2222222222222  
voltage  
rt1  
Low level value of on-state  
slope resistance  
0.74  
0.73  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(I > π x IT(AV)),TJ = TJ max.  
mΩ  
rt2  
High level value of on-state  
slope resistance  
VTM  
IH  
Max. on-state voltage  
Maximum holding current  
Typical latching current  
2.18  
600  
V
I
= 1635A, TJ = TJ max, t = 10ms sine pulse  
pk  
p
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
1000  
D-312  
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ST300C..L Series  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
Fig. 6- On-state Power Loss Characteristics  
Fig. 5- On-state Power Loss Characteristics  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
D-316  
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ST300C..L Series  
Fig. 9 - On-state Voltage Drop Characteristics  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
Fig. 11 - Gate Characteristics  
D-317  
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ST300C..L Series  
Switching  
Parameter  
ST300C..L  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
Gate drive 20V, 20, t 1µs  
r
1000  
1.0  
A/µs  
of turned-on current  
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V  
t
Typical turn-off time  
100  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
Blocking  
Parameter  
ST300C..L  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max, linear to 80% rated VDRM  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
50  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
23  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST300C..L  
Units Conditions  
PGM  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
MAX.  
200  
100  
50  
-
200  
-
T
J = - 40°C  
IGT  
DC gate current required  
to trigger  
mA  
V
TJ 25°C  
=
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
TJ = 125°C  
TJ = - 40°C  
2.5  
1.8  
1.1  
-
VGT  
DC gate voltage required  
to trigger  
3.0  
-
TJ  
= 25°C  
TJ = 125°C  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10.0  
0.25  
mA  
V
TJ = TJ max  
VGD  
V
DRM anode-to-cathode applied  
D-3133333  
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ST300C..L Series  
Thermal and Mechanical Specification  
Parameter  
ST300C..L  
Units Conditions  
°C  
TJ  
T
Max. operatingtemperaturerange  
Max. storage temperature range  
-40 to 125  
-40 to 150  
stg  
RthJ-hs Max. thermal resistance,  
junctiontoheatsink  
0.11  
0.05  
DCoperationsinglesidecooled  
DCoperationdoublesidecooled  
K/W  
K/W  
RthC-hs Max. thermal resistance,  
casetoheatsink  
0.011  
0.006  
9800  
(1000)  
250  
DCoperationsinglesidecooled  
DCoperationdoublesidecooled  
F
Mounting force, ± 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AC (B-PUK)  
SeeOutlineTable  
RthJ-hs Conduction  
12  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
K/W  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.012  
0.014  
0.018  
0.026  
0.045  
0.010  
0.015  
0.018  
0.027  
0.046  
0.008  
0.014  
0.019  
0.027  
0.046  
0.008  
0.014  
0.019  
0.028  
0.046  
60°  
30°  
Ordering Information Table  
Device Code  
ST 30  
0
C
20  
L
1
7
8
1
2
5
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
2222222222222  
Essential part number  
0 = Converter grade  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
L = Puk Case TO-200AC (B-PUK)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt:None = 500V/µsec (Standard value)  
8
-
L
= 1000V/µsec (Special selection)  
D-314  
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ST300C..L Series  
Outline Table  
34 (1.34) DIA. MAX.  
TWO PLACES  
0.7 (0.03) MIN.  
PIN RECEPTACLE  
AMP. 60598-1  
53 (2.09) DIA. MAX.  
0.7 (0.03) MIN.  
Case Style TO-200AC (B-PUK)  
All dimensions in millimeters (inches)  
6.2 (0.24) MIN.  
20°± 5°  
4.7 (0.18)  
23  
36.5 (1.44)  
2 HOLES DIA. 3.5 (0.14) x  
2.5 (0.1) DEEP  
CREPAGE DISTANCE 36.33 (1.430) MIN.  
STRIKE DISTANCE 17.43 (0.686) MIN.  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
D-3153333  
To Order  

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