ST300C08L1LPBF [INFINEON]
Silicon Controlled Rectifier, 1115A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, BPUK-2;
| 型号： | ST300C08L1LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 1115A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, BPUK-2 |
| 文件： | 总7页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25193 rev. B 04/00
ST300C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
560A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST300C..L
Units
560
55
A
°C
@ T
hs
IT(RMS)
1115
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
8000
8380
320
292
A
A
I2t
KA2s
KA2s
VDRM/VRRM
400 to 2000
100
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST300C..L Series
Bulletin I25193 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
peak and off-state voltage
repetitive peak voltage
V
V
04
08
12
16
18
20
400
500
800
900
1200
1600
1800
2000
1300
1700
1900
2100
ST300C..L
50
On-state Conduction
Parameter
ST300C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
560 (275)
55 (75)
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
1115
8000
8380
6730
7040
320
DC @ 25°C heatsink temperature double side cooled
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
292
KA2s
226
100% VRRM
207
reapplied
I2√t
Maximum I2√t for fusing
3200
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
0.97
0.98
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO)2 High level value of threshold
voltage
(I > π x IT(AV)),TJ = TJ max.
rt1
Low level value of on-state
slope resistance
0.74
0.73
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
2.18
600
V
I = 1635A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
2
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ST300C..L Series
Bulletin I25193 rev. B 04/00
Switching
Parameter
ST300C..L
1000
Units Conditions
A/µs
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
Typical turn-off time
100
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Blocking
Parameter
ST300C..L
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = TJ max, linear to 80% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
50
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST300C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
200
100
50
-
TJ = - 40°C
IGT
DC gate current required
to trigger
200
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
2.5
1.8
1.1
TJ = - 40°C
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ = 25°C
J = 125°C
T
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10.0
0.25
mA
V
TJ = TJ max
VGD
3
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ST300C..L Series
Bulletin I25193 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST300C..L
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.11
0.05
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.011
0.006
9800
(1000)
250
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
60°
30°
Ordering Information Table
Device Code
ST 30
0
C
20
L
1
1
2
5
7
8
3
4
6
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt:None = 500V/µsec (Standard value)
8
-
L
= 1000V/µsec (Special selection)
4
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ST300C..L Series
Bulletin I25193 rev. B 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
130
120
110
100
90
ST300C..L Series
(Single Side Cooled)
ST300C..L Series
(Single Side Cooled)
120
110
100
90
R
(DC) = 0.11 K/W
R
(DC) = 0.11 K/W
thJ-hs
thJ-hs
Conduction Period
80
Conduction Angle
80
70
70
60
30˚
60˚
60
90˚
30˚
50
120˚
60˚
50
180˚
40
90˚
40
120˚
30
180˚
DC
30
20
0
100
200
300
400
500
0
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
AverageOn-stateCurrent(A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST300C..L Series
Bulletin I25193 rev. B 04/00
130
130
120
110
100
90
ST300C..L Series
(Double Side Cooled)
(DC) = 0.05 K/W
ST300C..L Series
(Double Side Cooled)
120
110
100
90
R
R
(DC) = 0.05 K/W
thJ-hs
thJ-hs
Conduction Period
Conduction Angle
80
80
70
70
30˚
60
60
60˚
30˚
50
50
60˚
90˚
90˚
120˚
40
40
120˚
180˚
180˚
30
30
DC
20
20
0
200
400
600
800
0
200 400 600 800 1000 1200
AverageOn-stateCurrent(A)
AverageOn-stateCurrent(A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1600
1400
1200
1000
800
600
400
200
0
1800
1600
1400
1200
1000
800
180˚
120˚
90˚
60˚
30˚
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
RMS Limit
Conduction Period
ST300C..L Series
600
Conduction Angle
400
ST300C..L Series
200
T
= 125˚C
T
= 125˚C
J
J
0
0
100 200 300 400 500 600 700
AverageOn-stateCurrent(A)
0
200 400 600 800 1000 1200
AverageOn-stateCurrent(A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
7500
7000
6500
6000
5500
5000
4500
4000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated Vrrm Reapplied
3500 ST300C..L Series
ST300C..L Series
3000
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
PulseTrainDuration(s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST300C..L Series
Bulletin I25193 rev. B 03/00
10000
1000
100
T = 25˚C
J
T = 125˚C
J
ST300C..L Series
0
1
2
3
4
5
6
7
8
9
InstantaneousOn-stateVoltage(V)
Fig. 9 - On-state Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(1)
(2) (3)
(4)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST300C..L Series
0.1
0.001
0.01
0.1
1
10
100
SquareWavePulseDuration(s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1
0.1
Steady State Value
= 0.11 K/W
R
thJ-hs
(Single Side Cooled)
= 0.05 K/W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
0.001
ST300C..L Series
1
0.001
0.01
0.1
10
InstantaneousGateCurrent(A)
Fig. 11 - Gate Characteristics
7
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