ST300S04P0 [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | ST300S04P0 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25158 rev. B 01/94
ST300S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
300A
Center amplifying gate
Hermetic metal case with ceramic insulator
International standard case TO-209AE (TO-118)
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
IT(AV)
ST300S
Units
300
75
A
°C
A
@ TC
IT(RMS)
ITSM
470
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
8000
A
8380
A
I2t
320
KA2s
KA2s
V
292
V
DRM/VRRM
400 to 2000
100
t
typical
µs
°C
q
case style
TO-209AE (TO-118)
TJ
- 40 to 125
1
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ST300S Series
Bulletin I25158 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number
peak and off-state voltage
repetitive peak voltage
V
V
04
08
12
16
18
20
400
500
800
900
1200
1600
1800
2000
1300
1700
1900
2100
ST300S
50
On-state Conduction
Parameter
ST300S
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
300
75
A
180° conduction, half sine wave
°C
IT(RMS) Max. RMS on-state current
470
8000
8380
6730
7040
320
A
DC @ 64°C case temperature
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
No voltage
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
292
KA2s
226
207
I2√t
Maximum I2√t for fusing
3200
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
0.97
0.98
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO)2 High level value of threshold
voltage
(I > π x IT(AV)),TJ = TJ max.
r
Low level value of on-state
slope resistance
t1
0.74
0.73
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of on-state
slope resistance
t2
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.66
600
V
I = 940A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
2
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ST300S Series
Bulletin I25158 rev. B 01/94
Switching
Parameter
ST300S
1000
Units Conditions
A/µs
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
Typical turn-off time
100
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Blocking
Parameter
ST300S
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = TJ max. linear to 80% rated VDRM
IRRM
IDRM
Max. peak reverse and off-state
leakage current
50
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST300S
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
-
IGT
DC gate current required
to trigger
TJ = - 40°C
200
100
50
200
-
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT
DC gate voltage required
to trigger
TJ = - 40°C
2.5
1.8
1.1
-
3
-
V
TJ = 25°C
T
J = 125°C
J = TJ max
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10.0
0.25
mA
V
T
VGD
3
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ST300S Series
Bulletin I25158 rev. B 01/94
Thermal and Mechanical Specification
Parameter
ST300S
Units Conditions
°C
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
stg
RthJC Max. thermal resistance,
0.10
0.03
DC operation
K/W
junction to case
RthCS Max. thermal resistance,
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque, ± 10%
48.5
(425)
535
Nm
Non lubricated threads
See Outline Table
(lbf-in)
wt
Approximate weight
Case style
g
TO - 209AE (TO-118)
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
180°
120°
90°
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
TJ = TJ max.
K/W
60°
30°
Ordering Information Table
Device Code
ST 30
0
S
20
P
0
1
2
6
7
8
3
4
5
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
P = Stud base 16UNF threads
M = Stud base metric threads (M24 x 1.5)
7
8
-
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
Critical dv/dt: None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST300S Series
Bulletin I25158 rev. B 01/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX.
4.5 (0.18) MAX.
4.3 (0.17) DIA.
WHITE GATE
10.5 (0.41)
NOM.
RED SILICON RUBBER
FLEXIBLE LEAD
2
C.S. 50mm
(0.078 s.i.)
RED CATHODE
38 (1.50)
MAX. DIA.
Fast-on Terminals
AMP. 280000-1
REF-250
WHITE SHRINK
RED SHRINK
SW 45
3/4"16 UNF-2A
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
49 (1.92) MAX.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
38 (1.5)
DIA. MAX.
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
All dimensions in millimeters (inches)
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
5
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ST300S Series
Bulletin I25158 rev. B 01/94
130
130
120
110
100
90
ST300S Se rie s
ST300S Se rie s
R
(DC ) = 0.10 K/W
R
(DC ) = 0.10 K/ W
thJC
thJC
120
110
100
90
C o nd uc tio n Pe riod
C o nd uc tio n An g le
30°
60°
90°
80
30°
120°
60°
180°
80
90°
120°
70
180°
DC
400
70
60
0
100
200
300
500
0
50 100 150 200 250 300 350
Ave ra g e On-sta te C urre nt (A)
Ave ra g e O n-sta te C urre n t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
480
180°
120°
90°
60°
30°
0
2
.
0
440
t
h
8
S
A
K
/
W
0
400
360
320
280
240
200
160
120
80
.
1
K
/
W
0.
0
2
K
/
RMS Lim it
W
W
.
3
K
/
0
.
4
6
K
/
W
W
Co nd uctio n Ang le
0
1
.
K
/
.
2
K
/
W
ST300S Se rie s
T
= 125°C
40
J
0
0
40 80 120 160 200 240 280
3
2
0
50
75
100
125
Ave ra g e On-sta te C urre n t (A)
Ma ximum Allow a b le Amb ie nt Te m p e ra ture (°C )
Fig. 3 - On-state Power Loss Characteristics
650
600
550
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
60°
30°
0
.
0
8
K
/
W
0
.
1
2
K
/
W
RMS Limit
0
.
3
K
C o nd u c tio n Pe rio d
/
W
W
0
1
. 6
.2
K
/
ST300S Se rie s
K
/ W
T
= 125°C
J
0
0
100
200
300
400
5
0
0
50
75
100
125
Ave ra g e On-sta te C urre nt (A)
Ma ximum Allowa b le Amb ie nt Te mp e ra ture (°C )
Fig. 4 - On-state Power Loss Characteristics
6
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ST300S Series
Bulletin I25158 rev. B 01/94
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
8500
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
At Any Ra te d Loa d C on ditio n An d With
Ma ximum Non Re p e titive Surg e Curre nt
Ve rsus Pulse Tra in Dura tion . Co ntrol
O f C on d uc tio n Ma y No t Be Ma in ta in e d .
Ra te d V
Ap p lie d Fo llow ing Surg e .
RRM
Initia l T = 125°C
J
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Volta g e Re a p p lie d
Ra te d V
Re a p p lie d
RRM
ST300S Se rie s
ST300S Se rie s
1
10
100
0.01
0.1
Pulse T ra in Dura tio n (s)
1
Num b e r Of Eq ua l Am p litud e Ha lf C ycle Curre nt Pulse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
T = 25°C
J
T = 125°C
J
1000
ST300S Serie s
100
0
1
2
3
4
5
6
7
8
9
In sta nta n eo us O n-sta te Volta g e (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
Ste a d y Sta te Va lue
= 0.10 K/W
R
t hJC
(DC Op e ra tion )
0.1
0.01
0.001
ST300S Se rie s
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
7
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ST300S Series
Bulletin I25158 rev. B 01/94
100
Re c ta ng ula r g a te p ulse
(1) PGM = 10W, tp = 4m s
(2) PGM = 20W, tp = 2m s
(3) PGM = 40W, tp = 1m s
(4) PGM = 60W, tp = 0.66ms
a ) Re c o mme nd e d loa d line fo r
ra te d d i/d t : 20V, 10oh ms; tr<=1 µs
b ) Re c omme nd e d loa d line for
<=30% ra te d di/ dt : 10V, 10ohm s
tr<=1 µs
10
1
(a )
(b )
(1) (2) (3) (4)
VG D
IGD
Fre que nc y Limite d b y PG(AV)
De vic e : ST300S Se rie s
0.1
0.001
0.01
0.1
1
10
100
Insta nta ne o us Ga te Curre nt (A)
Fig. 9 - Gate Characteristics
8
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