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ST303C08LFM1P [INFINEON]

Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM);
ST303C08LFM1P
型号： ST303C08LFM1P
厂家： Infineon    Infineon
描述：

Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM)

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Bulletin I25237 10/06  
ST303CLPbF SERIES  
INVERTER GRADE THYRISTORS  
Hockey Puk Version  
Features  
Metal case with ceramic insulator  
International standard case TO-200AC (B-PUK)  
All diffused design  
515A  
Center amplifying gate  
Guaranteed high dV/dt  
Guaranteed high dI/dt  
High surge current capibility  
Low thermal impedance  
High speed performance  
TypicalApplications  
Inverters  
Choppers  
case style TO-200AC (B-PUK)  
Induction heating  
All types of force-commutated converters  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST303C..L  
Units  
515  
55  
A
°C  
@ T  
hs  
IT(RMS)  
995  
25  
A
@ T  
°C  
hs  
ITSM  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
7950  
8320  
316  
289  
A
A
I2t  
KA2s  
KA2s  
VDRM/VRRM  
400 to 1200  
10 to 30  
V
t range (*)  
µs  
q
TJ  
- 40 to 125  
°C  
(*) t = 10 to 20µs for 400 to 800V devices  
q
t = 15 to 30µs for 1000 to 1200V devices  
q
1
www.irf.com  
ST303CLPbF Series  
Bulletin I25237 10/06  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
V
DRM/VRRM, maximum  
VRSM , maximum  
IDRM/IRRM max.  
@ TJ = TJ max.  
mA  
Typenumber  
ST303C..L  
repetitivepeakvoltage  
non-repetitivepeakvoltage  
V
V
04  
08  
10  
12  
400  
500  
800  
900  
50  
1000  
1200  
1100  
1300  
CurrentCarryingCapability  
ITM  
ITM  
ITM  
Frequency  
Units  
180oel  
1800  
1850  
1560  
690  
50  
180oel  
100μs  
5660  
2830  
1490  
540  
50  
50Hz  
400Hz  
1130  
1010  
950  
820  
1540  
1570  
4990  
2420  
A
V
1000Hz  
680  
230  
50  
530  
140  
50  
1300  
510  
50  
1220  
390  
50  
2500Hz  
RecoveryvoltageVr  
Voltage before turn-on Vd  
VDRM  
V DRM  
V DRM  
Rise of on-state current di/dt  
Heatsink temperature  
50  
40  
50  
55  
-
-
-
-
A/μs  
40  
55  
40  
55  
°C  
Equivalent values for RC circuit  
10Ω / 0.47µF  
10Ω / 0.47µF  
10Ω / 0.47µF  
On-stateConduction  
Parameter  
ST303C..L  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
515 (190)  
55 (85)  
995  
A
180° conduction, half sine wave  
°C  
double side (single side) cooled  
IT(RMS) Max. RMS on-state current  
DC @ 25°C heatsink temperature double side  
cooled  
ITSM  
Max. peak, one half cycle,  
non-repetitive surge current  
7950  
8320  
6690  
7000  
316  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
A
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max  
I2t  
Maximum I2t for fusing  
KA2s  
289  
224  
204  
I2√t  
Maximum I2√t for fusing  
3160  
KA2√s t = 0.1 to 10ms, no voltage reapplied  
2
www.irf.com  
ST303CLPbF Series  
Bulletin I25237 10/06  
On-stateConduction  
Parameter  
ST303C..L Units Conditions  
VTM  
Max. peak on-state voltage  
2.16  
1.44  
ITM= 1255A, TJ = TJ max, t = 10ms sine wave pulse  
p
VT(TO)1 Low level value of threshold  
voltage  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
V
VT(TO)2 High level value of threshold  
voltage  
1.48  
0.57  
0.56  
(I > π x IT(AV)), TJ = TJ max.  
r 1  
t
Low level value of forward  
slope resistance  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(I > π x IT(AV)), TJ = TJ max.  
mΩ  
r 2  
t
High level value of forward  
slope resistance  
IH  
IL  
Maximum holding current  
600  
TJ = 25°C, IT > 30A  
mA  
Typical atching current  
1000  
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A  
Switching  
Parameter  
ST303C..L Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
TJ = TJ max, VDRM = rated VDRM  
ITM = 2 x di/dt  
1000  
A/µs  
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs  
p
t
Typical delay time  
0.83  
d
Resistive load Gate pulse: 10V, 5Ω source  
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs  
µs  
Min Max  
t
Max. turn-off time (*)  
q
10  
30  
VR = 50V, t = 500µs, dv/dt: see table in device code  
p
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.  
q
q
Blocking  
Parameter  
ST303C..L Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
TJ = TJ max. linear to 80% VDRM, higher value  
available on request  
500  
50  
V/μs  
IRRM Max. peak reverse and off-state  
IDRM leakage current  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
ST303C..L Units Conditions  
60  
PGM  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
Maximum peak gate power  
W
TJ = TJ max, f = 50Hz, d% = 50  
10  
10  
A
TJ = TJ max, t ≤ 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
5
V
TJ = TJ max, t ≤ 5ms  
p
-VGM Maximum peak negative  
gate voltage  
IGT  
Max. DC gate current required  
to trigger  
200  
3
mA  
V
TJ = 25°C, VA = 12V, Ra = 6Ω  
VGT  
Max. DC gate voltage required  
to trigger  
IGD  
Max. DC gate current not to trigger  
20  
mA  
V
TJ = TJ max, rated VDRM applied  
VGD  
Max. DC gate voltage not to trigger  
0.25  
www.irf.com  
3
ST303CLPbF Series  
Bulletin I25237 10/06  
ThermalandMechanicalSpecification  
Parameter  
ST303C..L  
Units Conditions  
°C  
TJ  
T
Max. operating temperature range  
Max. storage temperature range  
-40 to 125  
-40 to 150  
stg  
RthJ-hs Max. thermal resistance,  
junction to heatsink  
0.11  
0.05  
DC operation single side cooled  
K/W  
K/W  
DC operation double side cooled  
R
thC-hsMax. thermal resistance,  
case to heatsink  
0.011  
0.005  
9800  
(1000)  
250  
DC operation single side cooled  
DC operation double side cooled  
F
Mounting force, ± 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AC (B-PUK)  
See Outline Table  
ΔRthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidalconduction Rectangularconduction  
Conductionangle  
Units  
K/W  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.012  
0.014  
0.018  
0.026  
0.045  
0.010  
0.015  
0.018  
0.027  
0.046  
0.008  
0.014  
0.019  
0.027  
0.046  
0.008  
0.014  
0.019  
0.028  
0.046  
60°  
30°  
OrderingInformationTable  
Device Code  
ST 30  
3
C
12  
L
H
K
1
P
2
1
3
7
4
6
5
8
9
10  
11  
1 - Thyristor  
2 - Essential part number  
3 - 3 = Fast turn off  
4 - C = Ceramic Puk  
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
6 - L = Puk Case TO-200AC (B-PUK)  
dv/dt - tq combinations available  
dv/dt(V/µs) 20 50 100 200 400  
CN DN EN FN * HN  
7 - Reapplied dv/dt code (for t test condition)  
q
t (µs)  
q
10  
12  
15  
20  
8 - t code  
q
CM DM EM FM HM  
CL DL EL FL * HL  
CK DK EK FK * HK  
up to 800V  
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)  
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)  
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)  
t (µs)  
q
15  
18  
20  
25  
30  
CL  
CP DP  
CK DK EK FK * HK  
CJ  
--  
--  
--  
--  
--  
--  
--  
--  
only for  
1000/1200V  
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)  
- Criticaldv/dt:  
DJ  
EJ FJ * HJ  
DH EH FH HH  
10  
None = 500V/µsec(Standardvalue)  
= 1000V/µsec (Special selection)  
11 - P = Lead Free  
*Standard part number.  
All other types available only on request.  
L
4
www.irf.com  
ST303CLPbF Series  
Bulletin I25237 10/06  
OutlineTable  
34 (1.34) DIA. MAX.  
TWO PLACES  
0.7 (0.03) MIN.  
PIN RECEPTACLE  
AMP. 60598-1  
53 (2.09) DIA. MAX.  
0.7 (0.03) MIN.  
6.2 (0.24) MIN.  
20°± 5°  
4.7 (0.18)  
CaseStyleTO-200AC(B-PUK)  
36.5 (1.44)  
All dimensions in millimeters (inches)  
Quote between upper and lower  
pole pieces has to be considered  
after application of Mounting Force  
(see Thermal and Mechanical  
Specification)  
2 HOLES DIA. 3.5 (0.14) x  
2.5 (0.1) DEEP  
CREPAGE DISTANCE 36.33 (1.430) MIN.  
STRIKE DISTANCE 17.43 (0.686) MIN.  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
ST303C..LSeries  
(Single Side Cooled)  
ST303C..L Series  
(Single Side Cooled)  
R (DC) = 0.11 K/W  
thJ-hs  
R
(DC) = 0.11 K/W  
thJ-hs  
80  
Conduction Period  
Conduction Angle  
70  
80  
30°  
60  
60°  
70  
90°  
30°  
50  
120°  
180°  
60°  
60  
40  
90°  
120°  
50  
30  
180°  
DC  
20  
0
40  
0
50 100 150 200 250 300 350  
Average On-state Current (A)  
100 200 300 400 500 600  
Average On-state Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
www.irf.com  
5
ST303CLPbF Series  
Bulletin I25237 10/06  
130  
130  
120  
110  
100  
90  
ST303C..L Series  
(Double Side Cooled)  
ST303C..LSeries  
(Double Side Cooled)  
120  
110  
100  
90  
R
(DC) = 0.05 K/W  
R
(DC) = 0.05 K/W  
thJ-hs  
thJ-hs  
Conduction Angle  
Conduction Period  
80  
80  
70  
30°  
70  
60  
60°  
90°  
60  
30°  
50  
60°  
120°  
180°  
90°  
50  
40  
120°  
180°  
40  
30  
DC  
30  
20  
0
0
1
100 200 300 400 500 600 700  
Average On-state Current (A)  
0
200 400 600 800 1000 1200  
Average On-state Current (A)  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
2600  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
2000  
1800  
1600  
1400  
1200  
1000  
800  
180°  
120°  
90°  
60°  
30°  
DC  
180°  
120°  
90°  
60°  
30°  
RM S Lim it  
RM S Lim it  
Conduction Period  
Conduction Angle  
ST303C..L Series  
600  
600  
400  
ST303C..LSeries  
T = 125°C  
J
400  
200  
T = 125°C  
J
200  
0
0
100 200 300 400 500 600 700 800  
Average On-state Current (A)  
0
200 400 600 800 1000 1200  
Average On-state Current (A)  
Fig. 5 - On-state Power Loss Characteris-  
tics  
Fig. 6 - On-state Power Loss Characteris-  
tics  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
8000  
7500  
7000  
6500  
6000  
5500  
5000  
4500  
4000  
At Any Rated Load Condition And With  
Maximum Non Repetitive Surge Current  
VersusPulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
Rated V  
Applied Following Surge.  
RRM  
Initial T = 125°C  
J
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
Initial T = 125°C  
J
No Voltage Reapplied  
Rated V  
Reapplied  
RRM  
ST303C..L Series  
3500 ST303C . . L Se rie s  
3000  
0.01  
0.1  
Pulse Train Duration (s)  
1
10  
100  
NumberOf Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 7 - Maximum Non-repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-repetitive Surge Current  
Single and Double Side Cooled  
6
www.irf.com  
ST303CLPbF Series  
Bulletin I25237 10/06  
10000  
1000  
100  
1
0.1  
Steady State Value  
= 0.11 K/W  
R
thJ-hs  
(Single Side Cooled)  
= 0.05 K/W  
R
thJ-hs  
(Double Side Cooled)  
(DC Operation)  
T = 25°C  
J
T = 125°C  
J
0.01  
ST303C..LSeries  
ST303C .. L Se r ie s  
0.001  
0
1
2
3
4
5
6
7
8
0.001  
0.01  
0.1  
1
10  
Sq u a re Wa v e Pu lse D u r a t io n ( s)  
InstantaneousOn-state Voltage (V)  
Fig. 9 - On-state Voltage Drop Characteristics  
Fig. 10 - Thermal Impedance ZthJ-hs Characteris-  
tics  
180  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
I
= 1000 A  
500 A  
170  
160  
150  
140  
130  
120  
110  
100  
90  
80  
70  
60  
50  
I
= 1000 A  
500 A  
TM  
TM  
300 A  
300 A  
200 A  
200 A  
100 A  
100 A  
ST3 03C . . L Se rie s  
ST303C..L Series  
T = 125 °C  
T = 125 °C  
J
J
40  
30  
10 20 30 40 50 60 70 80 90 100  
10 20 30 40 50 60 70 80 90 100  
Rate Of Fall Of On-state Current - di/dt (A/µs)  
Fig. 11 - Reverse Recovered Charge Characteristics  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig. 12 - Reverse Recovery Current Characteristics  
1E4  
1E3  
1E2  
100  
50 Hz  
200  
400  
100  
50 Hz  
500  
200  
400  
1000  
500  
1000  
1500  
1500  
Snubber circuit  
R = 10 o hm s  
Snubber circuit  
s
2000  
R
C
V
= 10 o hm s  
= 0.47 µF  
= 80%V  
2000  
2500  
3000  
C
V
= 0.47 µF  
= 80%V  
s
s
s
DRM  
D
2500  
3000  
DRM  
D
ST30 3 C . . L Se r ie s  
Sin u so id a l p u lse  
T = 40 ° C  
ST3 0 3C . . L Se rie s  
Sinusoidal pulse  
T = 55°C  
tp  
C
tp  
C
1E1  
1
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
4  
1E4  
Pulse Ba se w id t h (µs)  
Pulse Ba sew id t h (µs)  
Fig. 13 - Frequency Characteristics  
www.irf.com  
7
ST303CLPbF Series  
Bulletin I25237 10/06  
1E4  
Snubber circuit  
Snubber circuit  
R
C
V
= 10 o h m s  
= 0.47 µF  
= 80%V  
R = 10 ohms  
s
s
C
= 0.47 µF  
= 80%V  
s
s
V
D
DRM  
DRM  
50 Hz  
D
100  
200  
400  
50 Hz  
100  
200  
400  
500  
1E3  
1E2  
1E1  
500  
1000  
1000  
1500  
1500  
2000  
2500  
2000  
2500  
3000  
ST303C..LSeries  
Trapezoidal pulse  
ST303C..LSeries  
Trapezoidal pulse  
3000  
T = 40°C  
T = 55°C  
C
C
tp  
tp  
di/dt = 50A/µs  
di/dt = 50A/µs  
1E1  
1E4
1E1  
1E2  
1E3  
1E2  
1E3  
1E4  
Pulse Ba se w id t h (µs)  
Pulse Ba sew id t h (µs)  
Fig. 14 - Frequency Characteristics  
Snubber circuit  
1E4  
1E3  
1E2  
1E1  
Snubber circ uit  
R = 10 ohms  
R = 10 o h m s  
s
s
C
= 0.47 µF  
C
V
= 0.47 µF  
= 80%V  
s
s
V
= 80%V  
DRM  
D
DRM  
D
50 Hz  
100  
50 Hz  
200  
100  
200  
400  
500  
400  
500  
1000  
1000  
1500  
1500  
2000  
2000  
2500  
3000  
2500  
3000  
ST303C..LSeries  
Trapezoidal pulse  
ST303C..LSeries  
Trapezoidal pulse  
T = 55 ° C  
T = 40°C  
C
C
tp  
tp  
di/dt = 100A/µs  
di/dt = 100A/µs  
1E1  
1E4
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
Pulse Ba sew id t h ( µs)  
Pulse Ba se w id t h (µs)  
Fig. 15 - Frequency Characteristics  
1E5  
ST303C..LSeries  
Rectangular pulse  
di/dt = 50A/µs  
tp  
1E4  
1E3  
1E2  
1E1  
20 joulesper pulse  
20 joulesper pulse  
10  
10  
5
3
2
5
1
3
2
0.5  
0.4  
1
0.5  
0.4  
ST303C..LSeries  
Sinusoidal pulse  
tp  
1E1  
1E2  
Pulse Ba sew id t h ( µs)  
Fig. 16 - Maximum On-state Energy Power Loss Characteristics  
1E3  
1
1E4
1E1  
1E2  
1E3  
1E4  
Pulse Ba se w id t h ( µs)  
8
www.irf.com  
ST303CLPbF Series  
Bulletin I25237 10/06  
100  
10  
1
Rectangulargate pulse  
(1) PGM=10W, tp =20ms  
a)Recommended load line for  
rated di/dt : 20V, 10ohms; tr<=1µs  
b)Recommended load line for  
<=30%rated di/dt : 10V, 10ohms  
tr<=1µs  
(2) PGM=20W, tp =10ms  
(3) PGM = 40W, tp = 5ms  
(4) PGM = 60W, tp = 3.3ms  
(a)  
(b)  
(2)  
(3) (4)  
(1)  
VGD  
IGD  
Device: ST303C..LSeries FrequencyLimited byPG(AV)  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
InstantaneousGate Current (A)  
Fig. 17 - Gate Characteristics  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level and Lead-Free.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 10/06  
www.irf.com  
9

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VISHAY

ST303C08LFM2LP

 Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2
VISHAY

ST303C08LFM2P

 Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM)
INFINEON

ST303C08LFM2PBF

 Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON

ST303C08LFM3LP

 Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2
VISHAY

ST303C08LFM3P

 Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2
VISHAY

ST303C08LFN0

 Silicon Controlled Rectifier, 995A I(T)RMS, 515000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON

ST303C08LFN0L

 Silicon Controlled Rectifier, 995A I(T)RMS, 515000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
VISHAY

ST303C08LFN0L

 Silicon Controlled Rectifier, 995A I(T)RMS, 515000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3
INFINEON

ST303C08LFN0LP

 Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2
VISHAY
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