ST303C [INFINEON]
INVERTER GRADE THYRISTORS Hockey Puk Version; 逆变器GRADE闸流体曲棍球北辰版本
| 型号： | ST303C |
| 厂家： | 
Infineon |
| 描述： | INVERTER GRADE THYRISTORS Hockey Puk Version |
| 文件： | 总10页 (文件大小：440K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Bulletin I25186/A
ST303C..L SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
515A
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capibility
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
case style TO-200AC (B-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST303C..L
Units
515
55
A
°C
@ T
hs
hs
IT(RMS)
ITSM
I2t
995
25
A
@ T
°C
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
7950
8320
316
289
A
A
KA2s
KA2s
V
DRM/VRRM
400 to 1200
10 to 30
V
t range (*)
µs
q
TJ
- 40 to 125
°C
(*) t = 10 to 20µs for 400 to 800V devices
q
t = 15 to 30µs for 1000 to 1200V devices
q
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ST
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
repetitive peak voltage
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST303C..L
non-repetitive peak voltage
V
V
04
08
10
12
400
500
800
900
50
1000
1200
1100
1300
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
5660
2830
1490
540
50
180oel
1130
1010
680
230
50
50Hz
400Hz
950
820
1800
1850
1540
1570
4990
2420
A
V
1000Hz
530
140
50
1560
690
50
1300
510
50
1220
390
50
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
VDRM
VDRM
VDRM
Rise of on-state current di/dt
Heatsink temperature
50
40
50
55
-
-
-
-
A/µs
40
55
40
55
°C
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
ST303C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
515 (190)
55 (85)
995
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
7950
8320
6690
7000
316
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
289
KA2s
224
204
I2√t
Maximum I2√t for fusing
3160
KA2√s t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
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Fig. 7 - Maximum Non-repetitive Surge Current
Fig. 8 - Maximum Non-repetitive Surge Current
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ries
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
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Fig. 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
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Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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ries
100
Re c ta ng u la r g a te p u lse
a ) Re c o m m e n d e d lo a d lin e fo r
ra te d d i/ d t : 20V , 10o h m s; tr<=1 µ s
b ) Re c o m m e n d e d lo a d lin e fo r
<=30% ra te d d i/ d t : 10V , 10o hm s
tr<=1 µ s
(1) PG M = 10W , tp = 20m s
(2) PG M = 20W , tp = 10m s
(3) PG M = 40W , tp = 5m s
(4) PG M = 60W , tp = 3.3m s
(a )
10
(b )
1
(2) (3) (4)
(1)
V G D
IG D
D e vic e : ST303C ..L Se rie s Fre q u e n c y Lim ite d b y PG (A V )
0.1 10 100
0.1
0.001
0.01
1
Insta n ta n e o u s G a te C u rre nt (A )
Fig. 17 - Gate Characteristics
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ies
On-state Conduction
Parameter
ST303C..L Units Conditions
VTM
Max. peak on-state voltage
2.16
ITM= 1255A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
1.44
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.48
r
Low level value of forward
slope resistance
1
t
0.57
0.56
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
t
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical atching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST303C..L Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
1000
A/µs
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
0.83
d
Resistive load Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
t
Max. turn-off time (*)
q
10
30
VR = 50V, t = 500µs, dv/dt: see table in device code
p
(*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices.
q
q
Blocking
Parameter
ST303C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
50
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST303C..L Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max, f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
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ST303C..ees
Thermal and Mechanical Specification
Parameter
ST303C..L
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.11
0.05
DC operation single side cooled
DC operation double side cooled
K/W
K/W
R
thC-hs Max. thermal resistance,
case to heatsink
0.011
0.005
9800
(1000)
250
DC operation single side cooled
DC operation double side cooled
F
Mounting force, ± 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
60°
30°
Ordering Information Table
Device Code
ST 30
3
C
12
L
H
K
1
2
1
3
7
4
6
5
8
9
10
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - L = Puk Case TO-200AC (B-PUK)
dv/dt - tq combinations available
7 - Reapplied dv/dt code (for t test condition)
dv/dt (V/µs) 20
50 100 200 400
CN DN EN FN * HN
CM DM EM FM HM
q
t (µs)
q
10
12
15
20
8 - t code
q
up to 800V
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
CL
CK DK
DL
EL FL * HL
EK FK * HK
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
t (µs)
q
15
18
20
25
30
CL --
CP DP
CK DK
CJ
--
--
--
--
--
--
--
only for
1000/1200V
EK FK * HK
EJ FJ * HJ
DH EH FH HH
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
DJ
10
None = 500V/µsec (Standard value)
= 1000V/µsec (Special selection)
*Standard part number.
All other types available only on request.
L
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Outline Table
34 (1.34) DIA. MAX.
0.7 (0.03) MIN.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
4.7 (0.18)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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