ST3230C12R0LPBF [INFINEON]
Silicon Controlled Rectifier, 5970A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, RPUK-2;
| 型号： | ST3230C12R0LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 5970A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, RPUK-2 |
| 文件： | 总6页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25200 rev. B 04/00
ST3230C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
3360A
Double side cooling
High surge capability
High mean current
Fatigue free
TypicalApplications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST3230C..R
Units
2785
80
A
°C
A
@ TC
IT(AV)
3360
@ T
@ T
55
°C
A
hs
IT(RMS)
5970
25
°C
A
hs
ITSM
@ 50Hz
@ 60Hz
61200
64000
A
I2t
@ 50Hz
@ 60Hz
18730
17000
KA2s
KA2s
V
VDRM/VRRM
1000 to 1800
500
t
typical
max.
µs
q
TJ
125
°C
1
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
ST3230C..R
peak and off-state voltage
V
repetitive peak voltage
V
@ T = 125°C
CmA
10
12
14
16
18
1000
1200
1400
1600
1800
1100
1300
1500
1700
1900
250
On-state Conduction
Parameter
ST3230C..R
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
2785 (1720)
80
A
°C
A
180° conduction, half sine wave
IT(AV) Max. average on-state current
3360 (1360)
double side (single side [anode side]) cooled
@ Heatsink temperature
55 (85)
5970
°C
IT(RMS) Max. RMS on-state current
A
DC @ 25°C heatsink temperature double side cooled
61200
64000
49000
51300
18730
17000
12000
10920
0.92
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
TJ = TJ max.
ITSM
Max. peak, one-cycle
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
I2t
Maximum I2t for fusing
Initial TC = 125°C
KA2s
VT(TO) Max. value of threshold voltage
V
rt
Max. value of on-state slope
resistance
mΩ
0.09
TJ = TJ max.
VTM
IL
Max. on-state voltage
Typical latching current
1.3
V
I = 2900A, TC = 25°C
pk
300
mA
TJ = 25°C, VD = 5V
Switching
Parameter
ST3230C..R
150 (300)
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% VDRM to 1000A gate drive 10V, 5Ω, t = 0.5µs
r
A/µs
to 1A, TJ = TJ max.
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C
d
t
Maximum delay time
Typical turn-off time
4.5
d
q
Rise time 0.5µs
µs
IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
500
dIRR/dt = 2A/µs, VDR =67% VDRM, dvDR/dt = 8V/µs linear
2
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ST3230C..R Series
Bulletin I25200 rev. 04/00
Blocking
Parameter
ST3230C..R
500
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
dv/dt Maximum linear rate of rise of
off-state voltage
IRRM
IDRM
Max. peak reverse and off-state
leakage current
250
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
ST3230C..R
Units Conditions
= 100µs
PGM
150
10
t
p
W
IGM
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
30
A
V
V
Anode positive with respect to cathode
Anode positive with respect to cathode
Anode negative with respect to cathode
VGM
-VGM
IGT
30
0.25
Maximum DC gate current
required to trigger
400
4
mA
V
TC = 25°C, VDRM = 5V
VGT
Maximum gate voltage required
to trigger
TC = 25°C, VDRM = 5V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
Thermal and Mechanical Specification
Parameter
ST3230C..R
Units Conditions
On-state (conducting)
TJ max. Max. operating temperature
125
°C
T
Max. storage temperature range
-55 to 125
stg
RthJ-C
Thermal resistance, junction
to case
0.019
DC operation single side cooled
DC operation double side cooled
K/W
K/W
0.0095
Rth(C-h) Thermal resistance, case
to heatsink
0.004
0.002
Singlesidecooled
Double side cooled
Clamping force 43KN with
mounting compound
43000
(4400)
N
F
Mounting force 10%
(Kg)
wt
Approximate weight
Case style
1600
g
(R-PUK)
See Outline Table
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
0.0010
Double side
0.0010
Units
K/W
Conditions
TJ = TJ max.
180°
120°
60°
0.0017
0.0017
0.0044
0.0044
3
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
Ordering Information Table
Device Code
ST 323
0
C
18
R
1
7
1
2
3
5
6
8
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
R = Puk Case
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
CATHODE
20° 5°
)
4
2
.
0
(
3
.
6
(R-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
4
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
13 0
12 0
11 0
10 0
9 0
130
120
110
100
90
ST 3230C ..R Se ries
(Sin g le Sid e C oo le d )
ST3230C..R Series
(D ouble Side Cooled)
R
(DC) = 0.0115 K/W
R
(D C ) = 0.023 K /W
th J-hs
th J-hs
C ondu ction Angle
8 0
80
Cond uction Angle
7 0
70
6 0
60
5 0
50
60°
1 20°
4 0
40
60°
120°
DC
3 0
30
1 80°
D C
180°
2 0
20
0
50 0 1 0 00 1 50 0 2 0 00 2 50 0 30 0 0 3 5 00
A vera g e O n -sta te C u rre n t (A )
0
1000 2000 3000 4000 5000 6000
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
1 0 0 00
1 0 00
10 0
D C
180°
120°
60°
T
= 1 25° C
J
RMS Limit
Con duction Angle
ST3230C..R Series
S T3 230C ..R Se rie s
1. 5
T
= 125°C
J
0
1000 2000 3000 4000 5000 6000
Average On-state Current (A)
0.5
1
2
In sta n ta n e ou s O n - sta te V o lta g e (V )
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Voltage Drop Characteristics
5 5 00 0
5 0 00 0
4 5 00 0
4 0 00 0
3 5 00 0
3 0 00 0
2 5 00 0
2 0 00 0
1 5 00 0
100000
90000
80000
70000
60000
50000
40000
A t A n y R a ted Lo a d C o n d ition A n d W ith
M a xim u m N on R e pe titiv e Su rg e C u rre n t
V ersu s P u lse T ra in D u ra tio n . C o n tro l
O f C on d u ctio n M a y N o t Be M a in ta in e d .
50% R a te d
V
A p p lied Fo llow in g S u rg e
RR M
In itia l
T = 1 25°C
J
@
@
60 H z 0.0 083
50 H z 0.0 100
s
s
In itia l T
=
12 5°C
J
50% R a te d
V
R RM
R ea p p lie d
S T 3230C ..R Se rie s
ST 32 30C ..R Se rie s
1
10
1 00
1
10
Numb er O f Equ al Amp litude H alf C ycle C urren t Pulses (N)
Pu lse Tr a in D u ra tio n (m s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
1 00 00
I
= 1000A
T
= 125° C
S T 3230C ..R Se rie s
J
T
1 0 00
I
T
t
dI
T
d t
t
p
= 3ms
rr
Q
I
(REC )
RM
1 00
0 .1
1
10
1 00
Ra te O f D eca y O f O n - sta te C u rren t - d i/d t (A/µ s)
Fig. 7 - Stored Charged
0 .1
0. 01
Ste ad y Sta te V a lu e
0.019 K /W
(Sin gle Sid e C oo le d )
0.0095 K/W
R
=
thJ-C
R
=
thJ-C
(D ou b le S id e C o ole d )
(D C O p e ration )
0 .0 01
0. 00 01
ST 3230C ..R S eries
0 .0 01
0 .01
0.1
1
1 0
10 0
Sq u are W a ve P ulse D u ra tion (s)
Fig. 8 - Thermal Impedance ZthJ-C Characteristics
1 0 0
1 0
1
(1) PG M
(2) PG M
(3) PG M
(4) PG M
(5) PG M
=
=
=
=
=
2W
4W
8W
20W
50W
(6)
(5)
(6) PG M = 100W
(2)
(3)
(4)
(1)
V G D
IG D
D e vic e: S T323 0C ..R Se ries
0 .0 1
F req u en cy Lim ite d b y P G(A V )
1 10
0. 1
0 .00 1
0 .1
In sta n ta n e ou s G a te C u rren t (A)
Fig. 9 - Gate Characteristics
6
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