ST3230C [INFINEON]
PHASE CONTROL THYRISTORS Hockey Puk Version; 相位控制晶闸管曲棍球北辰版本
| 型号： | ST3230C |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS Hockey Puk Version |
| 文件： | 总6页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Previous Datasheet
Index
Next Data Sheet
Bulletin I25200/A
ST3230C..R SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
3360A
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
(R-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST3230C..R
Units
2785
80
A
°C
A
@ TC
IT(AV)
3360
@ T
55
°C
A
hs
IT(RMS)
5970
@ T
25
°C
A
hs
ITSM
@ 50Hz
@ 60Hz
61200
64000
A
I2t
@ 50Hz
@ 60Hz
18730
17000
KA2s
KA2s
V
V
DRM/VRRM
1000 to 1800
500
t
typical
max.
µs
q
TJ
125
°C
D-425
To Order
Previous Datasheet
Index
Next Data Sheet
ST3230C..R Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
Code
peak and off-state voltage
V
repetitive peak voltage
V
@ TC = 125°C
mA
10
12
14
16
18
1000
1200
1400
1600
1800
1100
1300
1500
1700
1900
ST3230C..R
250
On-state Conduction
Parameter
ST3230C..R
Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
2785 (1720)
80
A
12
°C
180° conduction, half sine wave
IT(AV) Max. average on-state current
@ Heatsink temperature
3360 (1360)
55 (85)
A
°C
A
double side (single side [anode side]) cooled
IT(RMS) Max. RMS on-state current
5970
DC @ 25°C heatsink temperature double side cooled
61200
64000
49000
51300
18730
17000
12000
10920
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TC = 125°C
I2t
Maximum I2t for fusing
KA2s
VT(TO) Max. value of threshold voltage
0.92
V
TJ = TJ max.
rt
Max. value of on-state slope
resistance
mΩ
0.09
TJ = TJ max.
VTM
IL
Max. on-state voltage
Typical latching current
1.3
V
I
= 2900A, TC = 25°C
pk
300
mA
TJ = 25°C, VD = 5V
Switching
2222222222222
Parameter
ST3230C..R
150 (300)
Units Conditions
di/dt
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
From 67% VDRM to 1000A gate drive 10V, 5Ω, t = 0.5µs
r
A/µs
to 1A, TJ = TJ max.
Gate drive 30V, 15Ω, V = 67% VDRM, TJ = 25°C
d
t
Maximum delay time
Typical turn-off time
4.5
d
q
Rise time 0.5µs
µs
IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
500
dIRR/dt = 2A/µs, VDR = 67% VDRM, dvDR/dt = 8V/µs linear
D-426
To Order
Previous Datasheet
Index
Next Data Sheet
ST3230C..R Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 4 - On-state Voltage Drop Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
D-429
To Order
Previous Datasheet
Index
Next Data Sheet
ST3230C..R Series
Fig. 7 - Stored Charged
Fig. 8 - Thermal Impedance ZthJ-C Characteristics
Fig. 9 - Gate Characteristics
D-430
To Order
Previous Datasheet
Index
Next Data Sheet
ST3230C..R Series
Blocking
Parameter
ST3230C..R
Units Conditions
V/µs TJ = TJ max. to 67% rated VDRM
dv/dt Maximum linear rate of rise of
off-state voltage
500
250
IRRM
IDRM
Max. peak reverse and off-state
leakage current
mA
TJ = 125°C rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
ST3230C..R
Units Conditions
= 100µs
PGM
150
10
t
p
W
IGM
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
30
A
V
V
Anode positive with respect to cathode
Anode positive with respect to cathode
Anode negative with respect to cathode
VGM
-VGM
IGT
30
0.25
Maximum DC gate current
required to trigger
400
4
mA
V
TC = 25°C, VDRM = 5V
VGT
Maximum gate voltage required
to trigger
TC = 25°C, VDRM = 5V
23
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VGD
DC gate voltage not to trigger
0.25
V
TC = 125°C
V
DRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST3230C..R
Units Conditions
TJ max. Max. operating temperature
125
On-state (conducting)
°C
T
Max. storage temperature range
-55 to 125
stg
RthJ-C
Thermal resistance, junction
tocase
0.019
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
0.0095
Rth(C-h) Thermal resistance, case
toheatsink
0.004
0.002
Singlesidecooled
Doublesidecooled
Clamping force 43KN with
mounting compound
43000
(4400)
N
F
Mounting force ± 10%
(Kg)
wt
Approximate weight
Case style
1600
g
(R-PUK)
SeeOutlineTable
∆RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
Single side
0.0010
Double side
0.0010
Units
K/W
Conditions
J = TJ max.
180°
120°
60°
T
0.0017
0.0017
0.0044
0.0044
D-4273333
To Order
Previous Datasheet
Index
Next Data Sheet
ST3230C..R Series
Ordering Information Table
Device Code
ST 323
0
C
18
R
1
7
8
1
5
2
3
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
R = Puk Case
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
12
8
-
L
= 1000V/µsec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
2222222222222
CATHODE
20° ± 5°
(R-PUK)
All dimensions in millimeters (inches)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
D-428
To Order
相关型号：
ST3230C10R0
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R0L
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R0PBF
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R1
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R1PBF
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R2
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R2LPBF
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R3L
Silicon Controlled Rectifier, 5970A I(T)RMS, 2800000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R3LPBF
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
ST3230C10R3PBF
Silicon Controlled Rectifier, 5970A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, RPUK-2
INFINEON
©2020 ICPDF网 联系我们和版权申明