ST330C..L Series
Bulletin I25154 rev. D 04/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
repetitive peak voltage
V
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number Code
peak and off-state voltage
V
04
08
400
800
500
900
ST2330C..L
12
14
16
18
20
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
50
On-state Conduction
Parameter
ST330C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
650 (314)
55 (75)
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
1230
9000
9420
7570
7920
405
DC @ 25°C heatsink temperature double side cooled
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
370
KA2s
287
262
I2√t
Maximum I2√t for fusing
4050
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.91
0.93
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
0.57
0.57
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.90
600
V
I = 1730A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST330C..L
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
t
100
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
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