ST330C08L2 [INFINEON]

Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4;


型号：	ST330C08L2
厂家：	Infineon
描述：	Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4
文件：	总8页 (文件大小：83K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Bulletin I25154 rev. D 04/03

ST330C..L SERIES

Hockey Puk Version

PHASE CONTROL THYRISTORS

Features

Center amplifying gate

Metal case with ceramic insulator

International standard case TO-200AC (B-PUK)

High profile hockey-puk

650A

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

case style TO-200AC (B-PUK)

Major Ratings and Characteristics

Parameters

I_T(AV)

ST330C..L

650

Units

@ T

°C

I_T(RMS)

1230

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

9000

9420

405

I²t

KA²s

370

V_DRM/V_RRM

400 to 2000

100

typical

µs

T_J

- 40 to 125

°C

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ST330C..L Series

Bulletin I25154 rev. D 04/03

ELECTRICALSPECIFICATIONS

Voltage Ratings

Voltage

V_DRM/V_RRM, max. repetitive

V_RSM, maximum non-

repetitive peak voltage

I_DRM/I_RRMmax.

@ T_J= T_Jmax

Type number Code

peak and off-state voltage

400

800

500

900

ST2330C..L

1200

1400

1600

1800

2000

1300

1500

1700

1900

2100

On-state Conduction

Parameter

ST330C..L

Units Conditions

I_T(AV)Max. average on-state current

@ Heatsink temperature

650 (314)

55 (75)

180° conduction, half sine wave

double side (single side) cooled

°C

I_T(RMS)Max. RMS on-state current

1230

9000

9420

7570

7920

405

DC @ 25°C heatsink temperature double side cooled

I_TSM

Max. peak, one-cycle

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

No voltage

reapplied

100% V_RRM

reapplied

non-repetitive surge current

Sinusoidal half wave,

Initial T_J= T_Jmax.

I²t

Maximum I²t for fusing

No voltage

reapplied

100% V_RRM

reapplied

370

KA²s

287

262

I²√t

Maximum I²√t for fusing

4050

KA²√s t = 0.1 to 10ms, no voltage reapplied

V_T(TO)Low level value of threshold

0.91

0.93

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

voltage

V_T(TO)High level value of threshold

(I > π x I_T(AV)),T_J= T_Jmax.

voltage

r_t1

Low level value of on-state

slope resistance

0.57

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

mΩ

r_t2

High level value of on-state

slope resistance

(I > π x I_T(AV)),T_J= T_Jmax.

V_TM

I_H

Max. on-state voltage

Maximum holding current

Typical latching current

1.90

600

I = 1730A, T_J= T_Jmax, t = 10ms sine pulse

pk p

T_J= 25°C, anode supply 12V resistive load

I_L

1000

Switching

Parameter

ST330C..L

1000

Units Conditions

di/dt

Max. non-repetitive rate of rise

of turned-on current

Gate drive 20V, 20Ω, t ≤ 1µs

A/µs

T_J= T_Jmax, anode voltage ≤ 80% V_DRM

Gate current 1A, di /dt = 1A/µs

Typical delay time

Typical turn-off time

1.0

= 0.67% V_DRM, T_J= 25°C

µs

I_TM= 550A, T_J= T_Jmax, di/dt = 40A/µs, V_R= 50V

100

dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs

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ST330C..L Series

Bulletin I25154 rev. D 04/03

Blocking

Parameter

ST330C..L

500

Units Conditions

V/µs T_J= T_Jmax. linear to 80% rated V_DRM

dv/dt Maximum critical rate of rise of

off-state voltage

I_RRM

I_DRM

Max. peak reverse and off-state

leakage current

T_J= T_Jmax, rated V_DRM/V_RRMapplied

Triggering

Parameter

Maximum peak gate power

P_G(AV)Maximum average gate power

I_GMMax. peak positive gate current

ST330C..L

Units Conditions

P_GM

10.0

2.0

T_J= T_Jmax, t ≤ 5ms

T_J= T_Jmax, f = 50Hz, d% = 50

3.0

T_J= T_Jmax, t ≤ 5ms

+V_GMMaximum peak positive

gate voltage

T_J= T_Jmax, t ≤ 5ms

-V_GMMaximum peak negative

gate voltage

5.0

TYP.

MAX.

200

100

200

T_J= - 40°C

T_J= 25°C

I_GT

DC gate current required

to trigger

Max. required gate trigger/ cur-

rent/ voltage are the lowest value

which will trigger all units 12V

anode-to-cathode applied

T_J= 125°C

T_J= - 40°C

T_J= 25°C

T_J= 125°C

2.5

1.8

1.1

V_GT

DC gate voltage required

to trigger

3.0

Max. gate current/voltage not to

trigger is the max. value which

will not trigger any unit with rated

V_DRManode-to-cathode applied

I_GD

DC gate current not to trigger

DC gate voltage not to trigger

T_J= T_Jmax

V_GD

0.25

Thermal and Mechanical Specification

Parameter

ST330C..L

Units Conditions

°C

T_J

Max.operatingtemperaturerange

Max.storagetemperaturerange

-40 to 125

-40 to 150

stg

R_thJ-hsMax.thermalresistance,

junctiontoheatsink

0.11

0.06

DCoperationsinglesidecooled

DCoperationdoublesidecooled

K/W

R_thC-hsMax.thermalresistance,

casetoheatsink

0.011

0.005

9800

(1000)

250

DCoperationsinglesidecooled

DCoperationdoublesidecooled

Mountingforce,±10%

(Kg)

Approximateweight

Casestyle

TO-200AC(B-PUK)

SeeOutlineTable

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ST330C..L Series

Bulletin I25154 rev. D 04/03

∆R_thJ-hsConduction

(The following table shows the increment of thermal resistence R_thJ-hswhen devices operate at different conduction angles than DC)

Sinusoidal conduction Rectangular conduction

Conduction angle

Units

K/W

Conditions

T_J= T_Jmax.

Single Side Double Side Single Side Double Side

180°

120°

90°

0.012

0.014

0.018

0.026

0.045

0.010

0.015

0.018

0.027

0.046

0.008

0.014

0.019

0.027

0.046

0.008

0.014

0.019

0.028

0.046

60°

30°

Ordering Information Table

Device Code

ST 33

Thyristor

Essential part number

0 = Converter grade

C = Ceramic Puk

Voltage code: Code x 100 = V_RRM(See Voltage Rating Table)

L = Puk Case TO-200AC (B-PUK)

0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)

2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)

3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

Critical dv/dt: None = 500V/µsec (Standard selection)

= 1000V/µsec (Special selection)

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ST330C..L Series

Bulletin I25154 rev. D 04/03

Outline Table

34 (1.34) DIA. MAX.

TWO PLACES

0.7 (0.03) MIN.

PIN RECEPTACLE

AMP. 60598-1

53 (2.09) DIA. MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

20°± 5°

4.7 (0.18)

Case Style TO-200AC (B-PUK)

All dimensions in millimeters (inches)

36.5 (1.44)

Quote between upper and lower

pole pieces has to be considered

after application of Mounting Force

(see Thermal and Mechanical

Specification)

2 HOLES DIA. 3.5 (0.14) x

2.5 (0.1) DEEP

CREPAGE DISTANCE 36.33 (1.430) MIN.

STRIKE DISTANCE 17.43 (0.686) MIN.

130

120

110

100

130

120

110

100

ST330C..L Series

(Single Side Cooled)

ST330C..LSeries

(Single Side Cooled)

(DC) = 0.11 K/W

thJ-hs

Conduction Period

Conduction Angle

30°

60°

90°

30°

120°

60°

180°

90°

120°

180°

600

50 100 150 200 250 300 350 400 450

Average On-state Current (A)

200

400

800

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

Fig. 1 - Current Ratings Characteristics

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ST330C..L Series

Bulletin I25154 rev. D 04/03

130

120

110

100

ST330C..LSeries

(Double Side Cooled)

ST330C..L Series

(Double Side Cooled)

120

110

100

(DC) = 0.05 K/W

thJ-hs

Conduction Angle

Conduction Period

30°

60°

30°

60°

90°

120°

180°

120°

180°

200

400

600

800

200 400 600 800 1000 1200 1400

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

2200

2000

1800

1600

1400

1200

1000

800

1600

1400

1200

1000

800

600

400

200

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

RM S Lim it

RMS Lim it

Conduction Period

ST330C..LSeries

Conduction Angle

ST330C..LSeries

600

400

T = 125°C

200

100 200 300 400 500 600 700 800

Average On-state Current (A)

200 400 600 800 1000 1200 1400

Average On-state Current (A)

Fig. 5- On-state Power Loss Characteristics

Fig. 6- On-state Power Loss Characteristics

8000

7500

7000

6500

6000

5500

5000

4500

4000

3500

9000

8500

8000

7500

7000

6500

6000

5500

5000

4500

4000

3500

At Any Rated Load Condition And With

Maximum Non Repetitive Surge Current

VersusPulse Train Duration. Control

Of Conduction May Not Be Maintained.

Rated V

RRM

Applied Following Surge.

Initial T = 125°C

@60 Hz 0.0083 s

@50 Hz 0.0100 s

Initial T = 125°C

No Voltage Reapplied

Rated V

Reapplied

RRM

ST330C..L Series

ST330C..LSeries

100

0.01

0.1

Pulse Train Duration (s)

Number Of Equal Amplitude Half Cycle Current Pulses(N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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ST330C..L Series

Bulletin I25154 rev. D 04/03

10000

1000

100

Tj = 125˚C

Tj = 25˚C

ST330C..L Series

Instantaneous On-state Voltage (V)

Fig. 9 - On-state Voltage Drop Characteristics

0.1

Steady State Value

= 0.11 K/W

thJ-hs

(Single Side Cooled)

= 0.05 K/W

thJ-hs

(Double Side Cooled)

(DC Operation)

0.01

0.001

ST330C..L Series

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z_thJ-hsCharacteristics

100

Rectangular gate pulse

(1) PGM = 10W, tp = 4ms

a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30%rated di/dt : 10V, 10ohms

tr<=1 µs

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

(a)

(b)

(1) (2) (3) (4)

VGD

IGD

Frequency Limited by PG(AV)

Device: ST330C..L Series

0.1

0.001

0.01

100

Inst a nt a ne o us Ga t e Curre nt (A)

Fig. 11 - Gate Characteristics

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ST330C..L Series

Bulletin I25154 rev. D 04/03

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 04 /03

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相关型号：

ST330C08L2PBF

Silicon Controlled Rectifier, 1230A I(T)RMS, 650000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, LEAD FREE, METAL, BPUK-4