ST650C22L1 [INFINEON]
Silicon Controlled Rectifier, 1857A I(T)RMS, 790000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, TO-200AC, BPUK-2;
| 型号： | ST650C22L1 |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 1857A I(T)RMS, 790000mA I(T), 2200V V(DRM), 2200V V(RRM), 1 Element, TO-200AC, BPUK-2 |
| 文件： | 总7页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25203 rev. B 04/00
ST650C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
790A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
TypicalApplications
DC motor control
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST650C..L
790
Units
A
@ T
55
°C
hs
IT(RMS)
ITSM
I2t
1557
25
A
@ T
°C
hs
@50Hz
10100
10700
510
A
@ 60Hz
@50Hz
@ 60Hz
A
KA2s
KA2s
475
V
DRM/VRRM
2000 to 2400
200
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST650C..L Series
Bulletin I25203 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRMmax.
@ TJ = TJ max
mA
Typenumber
ST650C..L
peak and off-state voltage
repetitive peak voltage
V
V
20
22
24
2000
2200
2400
2100
2300
2500
80
12
On-state Conduction
Parameter
ST650C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
790 (324)
55 (85)
1857
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
ITSM
Max. peak, one-cycle
10100
10700
8600
9150
510
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
475
KA2s
370
347
I2√t
Maximum I2√t for fusing
5100
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
1.04
1.13
0.61
0.35
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
2222222222222
rt1
Low level value of on-state
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)),TJ = TJ max.
slope resistance
mΩ
rt2
High level value of on-state
slope resistance
VTM
IH
Max. on-state voltage
2.07
600
V
I = 1700A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Typical latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
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2
ST650C..L Series
Bulletin I25203 rev. B 04/00
Switching
Parameter
ST650C..L
1000
Units Conditions
A/µs
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
t
200
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Blocking
Parameter
ST650C..L
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = TJ max. linear to 80% rated VDRM
IDRM
IRRM
Max. peak reverse and off-state
leakage current
80
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
23
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST650C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
200
100
50
-
T
J = - 40°C
IGT
DC gate current required
to trigger
200
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
2.5
1.8
1.1
TJ = - 40°C
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ = 25°C
J = 125°C
T
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
3
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ST650C..L Series
Bulletin I25203 rev. B 04/00
Thermal and Mechanical Specification
Parameter
ST650C..L
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.073
0.031
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.011
0.006
14700
(1500)
255
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
12
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
60°
30°
Ordering Information Table
Device Code
ST 65
0
C
24
L
1
1
2
5
6
7
8
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
2222222222222
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
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4
ST650C..L Series
Bulletin I25203 rev. B 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
23
Case Style TO-200AC (B-PUK)
36.5 (1.44)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
1 30
1 20
1 10
1 00
90
13 0
12 0
11 0
10 0
9 0
ST 6 50C ..L S e rie s
(Sin g le S id e C oo le d )
ST 650C ..L Se rie s
(Sin g le Sid e C oo le d )
R
(D C ) = 0.073 K /W
R
(D C ) = 0 .07 3 K /W
thJ-hs
th J-hs
Cond uction P eriod
C onduction An gle
30°
30°
60°
80
8 0
60 °
90 °
9 0°
120°
70
7 0
120°
180°
D C
180°
6 0
60
0
5 0
1 00 1 50 20 0 2 5 0 3 0 0 35 0 4 00
0
10 0
2 0 0
3 0 0
4 00
5 00
60 0
A ve ra g e O n - sta te C u rren t (A )
Av era g e O n -s ta te C u rren t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST650C..L Series
Bulletin I25203 rev. B 04/00
1 30
1 20
1 10
1 00
90
13 0
S T 650 C ..L S erie s
(D ou b le S id e C oole d )
ST 650C ..L Se ries
(D o u ble S id e C oo led )
12 0
11 0
10 0
9 0
R
(D C ) = 0.031 K /W
R
(D C ) = 0.0 31 K /W
thJ-h s
th J-hs
C onduction Angle
Cond uction Period
8 0
80
7 0
70
1 80°
6 0
60
5 0
50
120°
90°
9 0°
4 0
40
6 0°
120°
60 °
3 0
D C
30
30°
180 °
30°
2 0
20
0
10 0 2 00 3 0 0 4 0 0 5 00 6 00 7 0 0 80 0
0
2 00
4 00
60 0
80 0 10 0 0 1 2 00 1 40 0
Av era g e O n - sta te C u rre n t (A)
A ve ra g e O n -sta te C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
20 0 0
17 5 0
15 0 0
12 5 0
10 0 0
7 5 0
5 0 0
2 5 0
0
2 40 0
2 20 0
2 00 0
1 80 0
1 60 0
1 40 0
1 20 0
1 00 0
8 00
1 80°
1 20°
90°
60°
30°
D C
1 80°
1 20°
90°
60°
30°
R M S Lim it
R M S Lim it
C ondu ction P eriod
S T 650C ..L S eries
C ond uction Angle
S T 650 C ..L S erie s
6 00
4 00
T
= 12 5°C
J
T
= 12 5°C
J
2 00
0
0
1 0 0 2 00 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00
Ave ra g e O n -sta te C u rren t (A )
0
20 0
4 00
6 0 0
80 0 10 0 0 1 20 0 1 4 00
A ve ra g e O n -sta te C urre n t (A)
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
1 2 00 0
1 1 00 0
1 0 00 0
90 0 0
80 0 0
70 0 0
60 0 0
50 0 0
40 0 0
10 0 00
9 00 0
8 00 0
7 00 0
6 00 0
5 00 0
4 00 0
A t Any R ated Loa d C ond itio n An d W ith
M a x im u m N o n R e p etitive S u rg e C u rre n t
V e rsu s P u lse T ra in D u ra tion . C o n trol
O f C on d u c tio n M a y N ot B e M a in ta in ed .
R ated
V
Ap plied Follow in g Su rge .
RR M
In itia l T
= 12 5°C
J
@
@
60 H z 0 .00 83
50 H z 0 .01 00
s
s
In itia l
T
=
125 °C
No V olta g e R ea p p lie d
R a te d Re a p p lied
J
V
R RM
S T6 50C ..L S eries
ST 650 C ..L S er ie s
1
1 0
10 0
0 .0 1
0. 1
P u lse T ra in D u ra tion (s)
1
Nu mber O f Equ al Amp litud e H alf C ycle C urren t Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST650C..L Series
Bulletin I25203 rev. B 04/00
10000
1000
100
T
= 25°C
J
T
= 125°C
J
ST650C..L Series
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0. 1
Stea d y Sta te V a lu e
0.073 K/W
(Sin gle Sid e C oo le d)
0.031 K/W
R
=
thJ-hs
R
=
thJ-hs
(Do u ble Sid e C oo led )
(DC O p era tio n )
0 .0 1
ST 650C ..L Se ries
0 .00 1
0 .00 1
0.0 1
0 .1
S q ua re W a ve P u lse Du ra tion (s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1 0 0
1 0
1
Re cta n g u la r g a te p ulse
a ) R e com m e n d ed loa d lin e f or
ra ted d i/dt : 20V , 10oh m s; tr<= 1 µ s
b ) Re co m m e n d ed loa d lin e for
< = 30% ra te d d i/d t : 1 0V , 10o h m s
tr< = 1 µ s
(1) PG M
(2) PG M
(3) PG M
(4) PG M
=
=
=
=
10W , tp
20W , tp
40W , tp
60W , tp
=
=
=
=
4m s
2m s
1m s
0.66m s
(a )
(b )
(1)
(2) (3) (4)
V G D
IG D
F req u en c y Lim ite d b y P G (AV )
10 1 00
ST 6 50C ..L Se rie s
0 .1
0 .1
0 .0 01
0 .01
1
In sta n tan eo us G a te C u rren t (A)
Fig. 11 - Gate Characteristics
7
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