ST700C12L0PBF [INFINEON]
Silicon Controlled Rectifier, 1857A I(T)RMS, 910000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, BPUK-2;型号: | ST700C12L0PBF |
厂家: | Infineon |
描述: | Silicon Controlled Rectifier, 1857A I(T)RMS, 910000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, BPUK-2 栅极 触发装置 可控硅整流器 |
文件: | 总7页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I25190 rev. D 04/00
ST700C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
910A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
TypicalApplications
DC motor control
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST700C..L
Units
910
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
1857
25
A
@ T
°C
hs
@50Hz
15700
16400
1232
1125
A
@ 60Hz
@50Hz
@ 60Hz
A
KA2s
KA2s
V
DRM/VRRM
1200 to 2000
150
V
t
typical
µs
q
TJ
- 40 to 125
°C
1
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ST700C..L Series
Bulletin I25190 rev. D 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRMmax.
@ TJ = TJ max
mA
Typenumber
peak and off-state voltage
repetitive peak voltage
V
V
12
16
18
20
1200
1600
1800
2000
1300
1700
1900
2100
ST700C..L
80
On-state Conduction
Parameter
ST700C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
910 (355)
55 (85)
1857
A
180° conduction, half sine wave
°C
double side (single side) cooled
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
ITSM
Max. peak, one-cycle
15700
16400
13200
13800
1232
1125
871
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
KA2s
795
I2√t
Maximum I2√t for fusing
12321
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
1.00
1.13
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
0.40
0.35
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
slope resistance
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
1.80
600
V
I = 2000A, TJ = TJ max, t = 10ms sine pulse
pk p
Maximum holding current
Typical latching current
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
2
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ST700C..L Series
Bulletin I25190 rev. D 04/00
Switching
Parameter
ST700C..L
1000
Units Conditions
A/µs
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
1.0
d
q
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
t
Typical turn-off time
150
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Blocking
Parameter
ST700C..L
500
Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
V/µs TJ = TJ max. linear to 80% rated VDRM
IDRM
IRRM
Max. peak reverse and off-state
leakage current
80
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST700C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
200
MAX.
-
T
J = - 40°C
IGT
DC gate current required
to trigger
100
50
200
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
-
-
2.5
1.8
1.1
TJ = - 40°C
VGT
DC gate voltage required
to trigger
3.0
-
V
TJ = 25°C
J = 125°C
T
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
3
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ST700C..L Series
Bulletin I25190 rev. D 04/00
Thermal and Mechanical Specification
Parameter
ST700C..L
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.073
0.031
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
case to heatsink
0.011
0.006
14700
(1500)
255
DC operation single side cooled
DC operation double side cooled
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
60°
30°
Ordering Information Table
Device Code
ST 70
0
C
20
L
1
1
2
5
6
7
8
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
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ST700C..L Series
Bulletin I25190 rev. D 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
13 0
12 0
11 0
10 0
9 0
13 0
12 0
11 0
10 0
9 0
ST 70 0C ..L S er ies
(S in g le Sid e C o oled )
S T 700C ..L Se ries
(S in gle S id e C oo led )
R
(D C ) = 0.0 73 K/W
R
(D C ) = 0 .07 3 K/W
th J-hs
th J-hs
C on duction Period
8 0
C ond uction Angle
7 0
8 0
6 0
7 0
30°
60°
5 0
3 0°
90°
6 0
60°
4 0
1 20°
5 0 0
90°
180°
5 0
120°
3 0
180°
D C
4 0
2 0
0
10 0
2 0 0
3 0 0
40 0
60 0
70 0
0
20 0
4 00
60 0
8 0 0
1 00 0
A ve ra ge O n - sta te C u rren t (A )
A ver a g e O n -sta te C u rren t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST700C..L Series
Bulletin I25190 rev. D 04/00
130
1 30
1 20
1 10
1 00
90
ST700C..L Series
(Double Side Cooled)
ST 700C ..L Se ries
(D o ub le S id e C oo le d )
120
110
100
90
R
(DC) = 0.031 K/W
R
(D C ) = 0.031 K /W
thJ-hs
thJ- hs
C onduction Angle
C ondu ction Period
80
80
70
70
30 °
60
60
60°
90 °
50
50
30°
60°
90°
120°
40
40
120°
180°
18 0°
30
30
D C
20
20
0
200
400
600
800
1000 1200
0
4 0 0
8 00
1 2 00
1 60 0
2 00 0
A ver a g e O n -sta te C urre n t (A)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
3500
3000
2500
2000
1500
1000
500
2800
2400
2000
1600
1200
800
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RMS Limit
RMS Limit
C ond uction Period
ST700C..L Series
C ondu ction Angle
ST700C..L Series
400
T
= 125°C
T
= 125°C
J
J
0
0
0
200
400
600
800
1000 1200
0
400
800
1200
1600
2000
Average On-state Current (A)
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Fig. 5- On-state Power Loss Characteristics
1 40 0 0
1 30 0 0
1 20 0 0
1 10 0 0
1 00 0 0
9 00 0
16000
15000
14000
13000
12000
11000
10000
9000
A t A n y R a ted Lo a d C o n d ition A n d W ith
M a x im u m N on R e p etitiv e Su rg e C u rre n t
V e rsu s P ulse T ra in D u ra tion . C o n tro l
O f C on d u ction M a y N ot Be M a in ta in e d .
R a te d
V
A p p lie d F o llow in g Su rg e .
RRM
In itia l T
= 125° C
J
@
@
60 H z 0 .00 83
50 H z 0 .01 00
s
s
In itia l T
=
125° C
No V olta g e Re a p p lied
Ra te d R ea p p lied
J
V
RRM
8 00 0
8000
S T 700C ..L S eries
7 00 0
ST 7 00C ..L Se rie s
7000
6 00 0
6000
1
10
1 0 0
0.01
0.1
1
Numb er Of Equa l Amp litude H alf C ycle C urren t Pulses (N)
P u lse T ra in D u ra tion (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
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ST700C..L Series
Bulletin I25190 rev. D 04/00
1 0 0 00
1 00 0
10 0
T
=
2 5° C
J
T
= 125 °C
J
S T7 00C ..L S eries
0.5
1
1 .5
2
2.5
3
3.5
4
In sta n ta n e ou s O n - sta te V o lta g e (V )
Fig. 9 - On-state Voltage Drop Characteristics
0.1
ST 700C ..L Se rie s
0.0 1
Stea d y Sta te V a lu e
0.073 K /W
(Sin gle Sid e C o oled )
0.031 K /W
R
=
thJ-hs
R
=
thJ-hs
(D ou ble Sid e C o oled )
(D C O p e ration )
0.0 01
0.0 01
0. 01
0 .1
Sq u a re W a ve P ulse D ur atio n (s)
1
1 0
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
1 0 0
R ec ta n g ula r g a te p ulse
a ) Re co m m e n d e d lo a d lin e fo r
ra ted d i/d t : 20V , 1 0oh m s; tr< =1 µ s
b ) Re co m m e n d e d loa d lin e f or
< = 30% ra ted d i/d t : 10 V , 10 oh m s
tr< = 1 µs
(1) P G M
(2) P G M
(3) P G M
(4) P G M
=
=
=
=
10W , tp
20W , tp
40W , tp
60W , tp
=
=
=
=
4m s
2m s
1m s
0.66m s
10
(a )
(b )
1
(2)
(1)
(3) (4)
V G D
IG D
Fre q u en c y Lim ite d b y P G (AV )
10 1 00
D e vice : ST 7 00C ..L S eries
0 .1
0. 1
0.0 01
0 .0 1
1
In sta n ta n e ou s G a te C u rren t (A)
Fig. 11 - Gate Characteristics
7
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