ST730C08L1L [INFINEON]
PHASE CONTROL THYRISTORS; 相位控制晶闸管
| 型号： | ST730C08L1L |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL THYRISTORS |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25191 rev. D 04/03
ST730C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
Center amplifying gate
990A
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV)
ST730C..L
990
Units
A
@ T
55
°C
hs
IT(RMS)
2000
25
A
@ T
°C
hs
ITSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
17800
18700
1591
1452
A
A
I2t
KA2s
KA2s
VDRM/VRRM
800 to 2000
150
V
t
typical
µs
q
TJ
- 40 to 125
°C
www.irf.com
1
ST730C..L Series
Bulletin I25191 rev. D 04/03
ELECTRICALSPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
@ TJ = TJ max
mA
Type number Code
peak and off-state voltage
repetitive peak voltage
V
V
08
12
800
900
1200
1400
1600
1800
2000
1300
1500
1700
1900
2100
ST730C..L
14
16
18
20
80
On-state Conduction
Parameter
ST730C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
990 (375)
55 (85)
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
2000
17800
18700
15000
15700
1591
DC @ 25°C heatsink temperature double side cooled
ITSM
Max. peak, one-cycle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
non-repetitive surge current
A
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
100% VRRM
reapplied
1452
KA2s
1125
1027
I2√t
Maximum I2√t for fusing
15910
KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Low level value of threshold
1
0.98
1.12
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage
V
VT(TO) High level value of threshold
2
(I > π x IT(AV)),TJ = TJ max.
voltage
rt1
Low level value of on-state
slope resistance
0.32
0.27
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
rt2
High level value of on-state
slope resistance
(I > π x IT(AV)),TJ = TJ max.
VTM
IH
Max. on-state voltage
Maximum holding current
Typical latching current
1.62
600
V
I = 2000A, TJ = TJ max, t = 10ms sine pulse
pk p
mA
TJ = 25°C, anode supply 12V resistive load
IL
1000
Switching
Parameter
ST730C..L
1000
Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20Ω, t ≤ 1µs
r
A/µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di /dt = 1A/µs
g
t
Typical delay time
Typical turn-off time
1.0
d
V
= 0.67% VDRM, TJ = 25°C
d
µs
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
t
150
q
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
2
www.irf.com
ST730C..L Series
Bulletin I25191 rev. D 04/03
Blocking
Parameter
ST730C..L
500
Units Conditions
V/µs TJ = TJ max. linear to 80% rated VDRM
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM
IRRM
Max. peak reverse and off-state
leakage current
80
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
ST730C..L
Units Conditions
PGM
10.0
2.0
TJ = TJ max, t ≤ 5ms
p
W
A
TJ = TJ max, f = 50Hz, d% = 50
3.0
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
5.0
TYP.
MAX.
200
100
50
-
200
-
TJ = - 40°C
TJ = 25°C
IGT
DC gate current required
to trigger
mA
V
Max. required gate trigger/ cur-
TJ = 125°C
TJ = - 40°C
TJ = 25°C
TJ = 125°C
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
2.5
1.8
1.1
-
VGT
DC gate voltage required
to trigger
3.0
-
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
IGD
DC gate current not to trigger
DC gate voltage not to trigger
10
mA
V
TJ = TJ max
VGD
0.25
Thermal and Mechanical Specification
Parameter
ST730C..L
Units Conditions
°C
TJ
T
Max.operatingtemperaturerange
Max.storagetemperaturerange
-40 to 125
-40 to 150
stg
RthJ-hs Max.thermalresistance,
junctiontoheatsink
0.073
0.031
DCoperationsinglesidecooled
DCoperationdoublesidecooled
K/W
K/W
RthC-hs Max.thermalresistance,
casetoheatsink
0.011
0.006
14700
(1500)
255
DCoperationsinglesidecooled
DCoperationdoublesidecooled
F
Mountingforce,±10%
N
(Kg)
g
wt
Approximateweight
Casestyle
TO-200AC(B-PUK)
SeeOutlineTable
www.irf.com
3
ST730C..L Series
Bulletin I25191 rev. D 04/03
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
Conditions
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.010
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
K/W
TJ = TJ max.
60°
30°
Ordering Information Table
Device Code
ST 73
0
C
20
L
1
7
8
1
2
5
6
3
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Critical dv/dt: None = 500V/µsec (Standard selection)
8
-
L
= 1000V/µsec (Special selection)
4
www.irf.com
ST730C..L Series
Bulletin I25191 rev. D 04/03
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
Case Style TO-200AC (B-PUK)
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20°± 5°
4.7 (0.18)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
130
120
110
100
90
130
120
110
100
90
ST730C..LSeries
(Single Side Cooled)
ST730C..LSeries
(Single Side Cooled)
(DC) = 0.073 K/ W
R
(DC) = 0.073 K/ W
R
thJ-hs
thJ-hs
80
Conduction Angle
Conduction Period
70
80
60
30°
70
60°
30°
50
90°
60°
90°
120°
60
120°
40
180°
50
30
180°
DC
40
20
0
100 200 300 400 500 600 700
Average On-state Current (A)
0
200 400 600 800 1000 1200
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
www.irf.com
5
ST730C..L Series
Bulletin I25191 rev. D 04/03
130
130
120
110
100
90
ST730C..L Series
(Double Side Cooled)
ST730C..LSeries
(Double Side Cooled)
120
110
100
90
R
(DC) = 0.031 K/ W
R
(DC) = 0.031 K/W
thJ-hs
thJ-hs
Conduction Angle
80
80
Conduction Period
70
70
60
30°
60
60°
50
50
90°
120°
30°
60°
90°
40
40
120°
180°
180°
30
30
DC
20
20
0
400 800 1200 1600 2000 2400
Average On-state Current (A)
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2500
2000
1500
1000
500
3500
3000
2500
2000
1500
1000
500
180°
120°
90°
60°
30°
DC
180°
120°
90°
60°
30°
RM S Lim it
RMS Lim it
Conduction Period
ST730C..L Series
Conduction Angle
ST730C..LSeries
T = 125°C
J
T = 125°C
J
0
0
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
0
400 800 1200 1600 2000 2400
Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
16000
15000
14000
13000
12000
11000
10000
9000
18000
17000
16000
15000
14000
13000
12000
11000
10000
9000
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
ST730C..LSeries
8000 ST730C..LSeries
8000
7000
1
7000
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
www.irf.com
ST730C..L Series
Bulletin I25191 rev. D 04/03
10000
1000
100
T = 25°C
J
T = 125°C
J
ST730C..LSeries
0.5
1
1.5
2
2.5
3
3.5
InstantaneousOn-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0.1
Steady State Value
= 0.073 K/ W
R
thJ-hs
(Single Side Cooled)
= 0.031 K/ W
R
thJ-hs
(Double Side Cooled)
(DC Operation)
0.01
ST730C..L Series
1
0.001
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 10W, tp = 4ms
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/dt : 10V, 10ohms
tr<=1 µs
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Frequency Limited by PG(AV)
Device: ST730C..L Series
0.1
0.1
0.001
0.01
1
10
100
InstantaneousGate Current (A)
Fig. 11 - Gate Characteristics
www.irf.com
7
ST730C..L Series
Bulletin I25191 rev. D 04/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 04 /03
8
www.irf.com
相关型号：
ST730C08L1LPBF
Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4
INFINEON
ST730C08L1PBF
Silicon Controlled Rectifier, 2000A I(T)RMS, 990000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4
INFINEON
ST730C08L2LPBF
Silicon Controlled Rectifier, 2000A I(T)RMS, 990000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, METAL, BPUK-2
VISHAY
ST730C08L3LPBF
Silicon Controlled Rectifier, 2000A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4
INFINEON
ST730C08L3PBF
Silicon Controlled Rectifier, 2000A I(T)RMS, 990000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, ROHS COMPLIANT, METAL, BPUK-2
VISHAY
ST730C12L0LPBF
Silicon Controlled Rectifier, 2000A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4
INFINEON
©2020 ICPDF网 联系我们和版权申明