ST730 [INFINEON]

PHASE CONTROL THYRISTORS Hockey Puk Version; 相位控制晶闸管曲棍球北辰版本
ST730
型号: ST730
厂家: Infineon    Infineon
描述:

PHASE CONTROL THYRISTORS Hockey Puk Version
相位控制晶闸管曲棍球北辰版本

文件: 总8页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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DISCRETE POWER DIODES and THYRISTORS  
DATA BOOK  
D-334  
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Index  
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Bulletin I25191/B  
ST730C..L SERIES  
PHASE CONTROL THYRISTORS  
Hockey Puk Version  
Features  
990A  
Center amplifying gate  
Metal case with ceramic insulator  
International standard case TO-200AC (B-PUK)  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
case style TO-200AC (B-PUK)  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST730C..L  
Units  
990  
55  
A
°C  
@ T  
hs  
IT(RMS)  
ITSM  
I2t  
2000  
25  
A
@ T  
°C  
hs  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
17800  
18700  
1591  
1452  
A
A
KA2s  
KA2s  
V
DRM/VRRM  
800 to 1800  
150  
V
t
typical  
µs  
q
TJ  
- 40 to 125  
°C  
D-335  
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ST730C..L Series  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = TJ max  
mA  
Type number  
ST730C..L  
Code  
peak and off-state voltage  
repetitive peak voltage  
V
V
08  
12  
14  
16  
18  
800  
900  
1200  
1400  
1600  
1800  
1300  
1500  
1700  
1900  
80  
On-state Conduction  
Parameter  
ST730C..L  
Units Conditions  
IT(AV) Max. average on-state current  
@ Heatsink temperature  
990 (375)  
55 (85)  
A
180° conduction, half sine wave  
double side (single side) cooled  
12  
°C  
IT(RMS) Max. RMS on-state current  
2000  
17800  
18700  
15000  
15700  
1591  
DC @ 25°C heatsink temperature double side cooled  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
t = 10ms No voltage  
t = 8.3ms reapplied  
t = 10ms 100% VRRM  
t = 8.3ms reapplied  
ITSM  
Max. peak, one-cycle  
non-repetitive surge current  
A
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
1452  
KA2s  
1125  
1027  
I2t  
Maximum I2t for fusing  
15910  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO) Low level value of threshold  
1
0.98  
1.12  
0.32  
0.27  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
voltage  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
slope resistance  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
2222222222222  
VTM  
IH  
Max. on-state voltage  
Maximum holding current  
Typical latching current  
1.62  
600  
V
I
= 2000A, TJ = TJ max, t = 10ms sine pulse  
pk  
p
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
1000  
Switching  
Parameter  
ST730C..L  
1000  
Units Conditions  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
A/µs  
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.0  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V  
t
Typical turn-off time  
150  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
D-336  
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ST730C..L Series  
Fig. 3 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
Fig. 5- On-state Power Loss Characteristics  
Fig. 6- On-state Power Loss Characteristics  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
D-340  
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ST730C..L Series  
Fig. 9 - On-state Voltage Drop Characteristics  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics  
Fig. 11 - Gate Characteristics  
D-341  
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ST730C..L Series  
Blocking  
Parameter  
ST730C..L  
Units Conditions  
V/µs TJ = TJ max. linear to 80% rated VDRM  
dv/dt Maximum critical rate of rise of  
off-state voltage  
500  
80  
IDRM  
IRRM  
Max. peak reverse and off-state  
leakage current  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST730C..L  
Units Conditions  
PGM  
10.0  
2.0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
T
J = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
MAX.  
23  
200  
100  
50  
-
200  
-
T
J = - 40°C  
IGT  
DC gate current required  
to trigger  
mA  
V
TJ 25°C  
=
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
T
J = 125°C  
J = - 40°C  
2.5  
1.8  
1.1  
-
T
VGT  
DC gate voltage required  
to trigger  
3.0  
-
TJ  
= 25°C  
TJ = 125°C  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
mA  
V
TJ = TJ max  
VGD  
0.25  
V
DRM anode-to-cathode applied  
Thermal and Mechanical Specification  
Parameter  
ST730C..L  
-40 to 125  
Units Conditions  
°C  
TJ  
T
Max. operatingtemperaturerange  
Max. storage temperature range  
-40 to 150  
stg  
RthJ-hs Max. thermal resistance,  
junctiontoheatsink  
0.073  
0.031  
DCoperationsinglesidecooled  
DCoperationdoublesidecooled  
K/W  
K/W  
R
thC-hs Max. thermal resistance,  
casetoheatsink  
0.011  
0.006  
14700  
(1500)  
255  
DCoperationsinglesidecooled  
DCoperationdoublesidecooled  
F
Mounting force, ± 10%  
N
(Kg)  
g
wt  
Approximate weight  
Case style  
TO - 200AC (B-PUK)  
SeeOutlineTable  
D-3373333  
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ST730C..L Series  
RthJ-hs Conduction  
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)  
Sinusoidal conduction Rectangular conduction  
Conduction angle  
Units  
K/W  
Conditions  
TJ = TJ max.  
Single Side Double Side Single Side Double Side  
180°  
120°  
90°  
0.009  
0.011  
0.014  
0.020  
0.036  
0.009  
0.011  
0.014  
0.020  
0.036  
0.006  
0.010  
0.015  
0.021  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
60°  
30°  
12  
Ordering Information Table  
Device Code  
ST 73  
0
C
18  
L
1
7
1
5
8
2
3
6
4
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor  
Essential part number  
0 = Converter grade  
C = Ceramic Puk  
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)  
L = Puk Case TO-200AC (B-PUK)  
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)  
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)  
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)  
Critical dv/dt: None = 500V/µsec (Standard selection)  
2222222222222  
8
-
L
= 1000V/µsec (Special selection)  
D-338  
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ST730C..L Series  
Outline Table  
34 (1.34) DIA. MAX.  
0.7 (0.03) MIN.  
TWO PLACES  
PIN RECEPTACLE  
AMP. 60598-1  
Case Style TO-200AC (B-PUK)  
53 (2.09) DIA. MAX.  
0.7 (0.03) MIN.  
All dimensions in millimeters (inches)  
6.2 (0.24) MIN.  
20°± 5°  
4.7 (0.18)  
23  
36.5 (1.44)  
2 HOLES DIA. 3.5 (0.14) x  
2.5 (0.1) DEEP  
CREPAGE DISTANCE 36.33 (1.430) MIN.  
STRIKE DISTANCE 17.43 (0.686) MIN.  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
D-3393333  
To Order  

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