ST733C04LDK0LPBF [INFINEON]
Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3;
| 型号： | ST733C04LDK0LPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 1900A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3 |
| 文件： | 总9页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I25188 rev. A 04/00
ST733C..L SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
940A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
TypicalApplications
Inverters
Choppers
case style TO-200AC (B-PUK)
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV)
ST733C..L
Units
940
55
A
°C
@ T
hs
IT(RMS)
ITSM
I2t
1900
25
A
@ T
°C
hs
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
20000
20950
2000
1820
A
A
KA2s
KA2s
V
DRM/VRRM
400 to 800
10 to 20
V
t range
q
µs
TJ
- 40 to 125
°C
1
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ST733C..L Series
Bulletin I25188 rev. A 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VDRM/VRRM, maximum
VRSM , maximum
IDRM/IRRM max.
@ TJ = TJ max.
mA
Type number
ST733C..L
repetitive peak voltage
V
non-repetitive peak voltage
V
04
08
400
800
500
900
75
Current Carrying Capability
ITM
ITM
ITM
Frequency
Units
180oel
100µs
6800
3750
2120
960
50
180oel
50Hz
400Hz
2200
2050
1900
1660
3580
3600
3100
3130
5920
3240
1000Hz
1370
500
50
1070
370
50
2900
1220
50
2450
980
50
1780
770
50
A
V
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state currentdi/dt
VDRM
VDRM
V DRM
50
40
50
55
-
-
-
-
A/µs
°C
Heatsink temperature
40
55
40
55
Equivalent values for RC circuit
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
ST733C..L
Units Conditions
IT(AV) Max. average on-state current
@ Heatsink temperature
940 (350)
55 (85)
1900
A
180° conduction, half sine wave
double side (single side) cooled
°C
IT(RMS) Max. RMS on-state current
DC @ 25°C heatsink temperature double side cooled
t = 10ms No voltage
ITSM
Max. peak, one half cycle,
non-repetitive surge current
20000
20950
16800
17600
2000
A
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
Initial TJ = TJ max
I2t
Maximum I2t for fusing
1820
KA2s
1410
1290
I2√t
Maximum I2√t for fusing
20000
KA2√s t = 0.1 to 10ms, no voltage reapplied
2
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ST733C..L Series
Bulletin I25188 rev. A 04/00
On-state Conduction
Parameter
ST733C..L Units Conditions
VTM
Max. peak on-state voltage
1.63
1.09
ITM= 1700A, TJ = TJ max, t = 10ms sine wave pulse
p
VT(TO)1 Low level value of threshold
voltage
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
VT(TO)2 High level value of threshold
voltage
1.20
0.32
0.29
(I > π x IT(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
t
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
t2
IH
IL
Maximum holding current
600
TJ = 25°C, IT > 30A
mA
Typical latching current
1000
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST733C..L Units Conditions
di/dt
Max. non-repetitive rate of rise
of turned-on current
T
J = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt
1000
A/µs
Gate pulse: 20V 20Ω, 10µs 0.5µs rise time
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, t = 1µs
p
t
Typical delay time
1.5
d
Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max
TJ = TJ max, ITM = 550A, commutating di/dt = -40A/µs
t
Max. turn-off time
10
20
VR = 50V, t = 500µs, dv/dt: see table in device code
p
q
Blocking
Parameter
ST733C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
TJ = TJ max. linear to 80% VDRM, higher value
available on request
500
75
V/µs
IRRM Max. peak reverse and off-state
IDRM leakage current
mA
TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
ST733C..L Units Conditions
60
PGM
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
Maximum peak gate power
W
TJ = TJ max., f = 50Hz, d% = 50
10
10
A
TJ = TJ max, t ≤ 5ms
p
+VGM Maximum peak positive
gate voltage
20
5
V
TJ = TJ max, t ≤ 5ms
p
-VGM Maximum peak negative
gate voltage
IGT
Max. DC gate current required
to trigger
200
3
mA
V
TJ = 25°C, VA = 12V, Ra = 6Ω
VGT
Max. DC gate voltage required
to trigger
IGD
Max. DC gate current not to trigger
20
mA
V
TJ = TJ max, rated VDRM applied
VGD
Max. DC gate voltage not to trigger
0.25
3
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ST733C..L Series
Bulletin I25188 rev. A 04/00
Thermal and Mechanical Specification
Parameter
ST733C..L
Units Conditions
TJ
T
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
°C
stg
RthJ-hs Max. thermal resistance,
junction to heatsink
0.073
0.031
DC operation single side cooled
K/W
K/W
DC operation double side cooled
RthC-hs Max. thermal resistance,
0.011
0.005
14700
(1500)
255
DC operation single side cooled
DC operation double side cooled
case to heatsink
F
Mounting force, 10%
N
(Kg)
g
wt
Approximate weight
Case style
TO - 200AC (B-PUK)
See Outline Table
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
K/W
Conditions
TJ = TJ max.
Single Side Double Side Single Side Double Side
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.021
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.022
0.036
60°
30°
Ordering Information Table
Device Code
ST 73
3
C
08
L
H
K
1
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- C = Ceramic Puk
- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
- L = Puk Case TO-200AC (B-PUK)
dv/dt - tq combinations available
- Reapplied dv/dt code (for t test condition)
q
dv/dt (V/µs) 20
50
100 200 400
- t code
q
10
12
15
18
20
CN
CM
CL
CP
CK
DN
DM
DL
DP
DK
EN
EM FM *
EL
EP
EK
--
--
--
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
t (µs)
FL * HL
FP
FK
q
HP
H
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
* Standard part number.
All other types available only on request.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
10
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
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ST733C..L Series
Bulletin I25188 rev. A 04/00
Outline Table
34 (1.34) DIA. MAX.
TWO PLACES
0.7 (0.03) MIN.
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20° 5°
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
13 0
12 0
11 0
10 0
9 0
13 0
12 0
11 0
10 0
9 0
ST 733C ..L Se rie s
(Sin g le Sid e C oo le d )
S T73 3C ..L S e rie s
(S in g le Sid e C ooled )
R
(D C ) = 0.073 K /W
R
(D C ) = 0.073 K /W
th J-hs
thJ- hs
C ondu ction Period
8 0
Cond uction Angle
7 0
8 0
6 0
30 °
7 0
60°
30°
5 0
90°
60 °
6 0
120°
180 °
90°
4 0
120°
5 0
3 0
180 °
D C
4 0
2 0
0
10 0
2 00
3 0 0
4 00
50 0
6 00
7 00
0
2 00
40 0
60 0
8 0 0
1 0 00
A vera g e O n - sta te C u rren t (A)
Ave ra g e O n -sta te C u rren t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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ST733C..L Series
Bulletin I25188 rev. A 04/00
1 3 0
13 0
12 0
11 0
10 0
9 0
ST 7 33C ..L Se rie s
(D o ub le Sid e C oo le d )
ST 73 3C ..L S eries
(D ou b le S id e C o ole d )
1 2 0
1 1 0
1 0 0
9 0
R
(D C ) = 0.031 K /W
R
(D C ) = 0.031 K /W
thJ-h s
thJ-hs
C on duction Period
C onduction An gle
8 0
8 0
7 0
7 0
3 0°
6 0
6 0
60°
5 0
3 0°
5 0
60°
90 °
90°
4 0
120 °
4 0
1 20°
180 °
1 80°
3 0
3 0
D C
2 0
2 0
0
2 00
4 00
60 0
8 00 1 0 00 12 0 0 1 40 0
0
50 0
10 0 0
15 00
2 0 00
Av era g e O n - sta te C u rre n t (A )
A ve ra ge O n - sta te C u rren t (A )
Fig.4-CurrentRatingsCharacteristics
Fig.3-CurrentRatingsCharacteristics
2500
2000
1500
1000
500
2 5 00
2 0 00
1 5 00
1 0 00
50 0
180°
120°
90°
60°
30°
180 °
120 °
90 °
60 °
30 °
RMS Limit
R M S Lim it
C ondu ction Angle
ST733C..L Series
C ond uction Angle
ST 73 3C ..L Se rie s
T
= 125°C
T
= 12 5°C
J
J
0
0
0
200 400 600 800 1000 1200 1400
Average On-state Current (A)
0
20 0
4 00
6 00
8 0 0 1 0 00 1 20 0 1 4 00
Av era g e O n - sta te C u rre n t (A )
Fig.5-On-statePowerLossCharacteristics
Fig.6-On-statePowerLossCharacteristics
1 80 00
1 60 00
20 0 0 0
18 0 0 0
16 0 0 0
14 0 0 0
12 0 0 0
10 0 0 0
8 00 0
M a xim u m Non R epe titive Su r ge C u rren t
V e rsu s P ulse T rain D ur ation . C o n trol
Of C o nd uc tion M a y No t Be M a intaine d.
A t A ny R ated Loa d C o n ditio n A nd W ith
Ra ted
V
Ap plie d Follo w ing S urg e.
RRM
In itia l T
= 12 5°C
J
In itial T =
125°C
No V oltag e R ea pplie d
R a ted R ea pplie d
@
@
60 H z 0.0 083
50 H z 0.0 100
s
s
J
V
R RM
1 40 00
1 20 00
1 00 00
8 00 0
ST 733 C ..L S er ie s
ST 733C ..L S er ies
1
1 0
1 00
0 .0 1
0. 1
P u lse T r a in D u ra tio n (s)
1
Nu mber Of Eq ual Amplitu de Ha lf Cycle C urrent Pulses (N)
Fig.7-MaximumNon-repetitiveSurgeCurrent
SingleandDoubleSideCooled
Fig.8-MaximumNon-repetitiveSurgeCurrent
SingleandDoubleSideCooled
6
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ST733C..L Series
Bulletin I25188 rev. A 04/00
0 .1
10000
1000
100
ST 73 3C ..L S er ies
0 .01
Stea d y S ta te V a lu e
0.073 K /W
(S in g le S id e C oo le d )
0.031 K /W
T
T
= 25°C
J
R
=
= 125°C
thJ- hs
J
R
=
thJ- hs
ST733C..L Series
(D ou b le S id e C o ole d )
(D C O p era tio n )
0 .00 1
0 .00 1
0 .01
0 .1
1
1 0
10 0
0.5
1
1.5
Instantaneous On-state Voltage (V)
Fig.9-On-stateVoltageDropCharacteristics
2
2.5
3
3.5
4
4.5
S q u a re W a ve P u lse D ur ation (s)
Fig.10-ThermalImpedanceZthJCCharacteristic
2 50
2 00
1 50
1 00
50
45 0
40 0
35 0
30 0
25 0
20 0
15 0
10 0
5 0
I
= 1500 A
TM
ST 7 33C ..L Se rie s
I
= 1500 A
TM
T
=
12 5 ° C
J
1000 A
500 A
1000 A
500 A
S T 733C ..L Se rie s
= 125 °C
T
J
0
0
10
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0 10 0
10
2 0
3 0
40
50
6 0
70
80
90 1 0 0
R a te O f Fa ll O f O n -sta te C u rren t - d i/d t (A/µ s)
R a te O f Fa ll O f F orw a rd C u r ren t - d i/d t (A /µ s)
Fig.11-ReverseRecoveredChargeCharacteristics
Fig.12-ReverseRecoveryCurrentCharacteristics
1 E5
1 E4
1 E3
1 E2
Snub ber circu it
Snu bber circuit
R
C
V
=
10 ohm s
s
R
C
V
= 10 ohms
= 0.47 µF
s
= 0.47 µ F
= 80% V
s
D
s
DR M
=
80% V
DR M
D
50 Hz
100
200
400
50 Hz
100
200
400
1000
1000
1500
1500
2500
2500
3000
ST733C ..L Series
Sin usoidal pulse
ST733C..L Series
Sinusoidal pulse
3000
5000
5000
T
= 40°C
T
= 55°C
C
C
tp
tp
1 E1
1 E2
1 E3
1E14E41 E
1
1
E1
1 E2
1E3
1E4
P u lse Ba se w id th (µ s)
Pu lse B a sew id th (µ s)
Fig.13-FrequencyCharacteristics
7
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ST733C..L Series
Bulletin I25188 rev. A 04/00
1E 5
S T 733C..L S eries
T rapezoidal puls e
S nubber circuit
S nubber circuit
S T 733C..L S eries
T rapezoidal puls e
R
= 10 o hms
= 0.47 µF
= 80% V
R
C
= 10 ohms
= 0.47 µF
s
s
s
C
T
= 4 0°C
T
= 55 °C
s
C
C
tp
D
V
V
= 80%
V
D
di/dt= 50A/µs
di/dt= 50A/µs
DR M
DR M
1E 4
1E 3
1E 2
100
200
50 H z
50 H z
400
100
200
400
500
1000
500
1000
1500
2000
1500
2000
2500
3000
5000
2500
3000
1E 4
1E 1
1E 1
1E 2
1E 3
1E 2
1E 3
1E 4
P uls e B as ewidth (µs )
P uls e Bas ewidth (µs )
Fig.14-FrequencyCharacteristics
1E 5
1E 4
1E 3
1E 2
S T 733C..L S eries
T rapezoidal puls e
S nubber circuit
S nubber circuit
S T 733C..L S eries
T rapezoidal puls e
T = 55 °C
C
R
C
V
= 10 o hms
= 0.47 µF
= 80% V
R
C
= 10 ohms
= 0.47 µF
s
s
s
s
D
T
= 4 0°C
C
tp
D
V
= 80%
V
di/dt= 100A/µs
di/dt= 100A/µs
DR M
DR M
50 H z
100
50 H z
200
100
400
500
200
400
500
1000
1500
2000
1000
1500
2000
2500
2500
3000
3000
5000
1E 4 1E1
1E 1
1E 2
1E 3
1E 2
1E 3
1E 4
P uls e Bas ewidth (µs )
P uls e Bas ewidth (µs )
Fig.15-FrequencyCharacteristics
1 E5
1 E4
1 E3
1 E2
1 E1
ST733C ..L Series
Rectangular pulse
ST733C ..L Series
Sinusoidal pulse
d i/dt = 50A/µs
tp
tp
20 joules per pulse
10
20 joules p er pu lse
5
10
3
5
2
3
1
2
0.5
1
0.4
0.3
0.5
0.4
0.3
1 E1
1 E2
1E 3
1E141 E11E1
1E 2
1E 3
1 E4
P u lse B ase w id th (µs)
P u lse B ase w id th (µs)
Fig.16-MaximumOn-stateEnergyPowerLossCharacteristics
8
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ST733C..L Series
Bulletin I25188 rev. A 04/00
100
10
1
R ectangular gate puls e
(1) P GM = 10W , tp = 20ms
a) R ecommended load line for
rated di/dt :20V, 10ohms ; tr<=1 µs
b) R ecommended load line for
<=30% rated di/dt: 10V, 10ohms
tr<=1 µs
(2) P GM = 20W , tp = 10ms
(3) P GM = 40W , tp = 5ms
(4) P GM = 60W , tp = 3.3ms
(a)
(b )
(1)
(2)
(3) (4)
V GD
IGD
Device:S T 733C..L S eries
0.1
F requency Limited by P G(AV )
10 100
0.1
0.001
0.01
1
Ins tantaneous Gate Current (A)
Fig.17-GateCharacteristics
9
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ST733C04LDK3
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
ST733C04LDK3L
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
ST733C04LDK3P
Silicon Controlled Rectifier, 940000mA I(T), 400V V(DRM)Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
ST733C04LDL0
Silicon Controlled Rectifier, 1900A I(T)RMS, 940000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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INFINEON
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