ST780C06L2L [INFINEON]

Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AC, BPUK-2;


型号：	ST780C06L2L
厂家：	Infineon
描述：	Silicon Controlled Rectifier, 2700A I(T)RMS, 1400000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-200AC, BPUK-2 栅栅极
文件：	总8页 (文件大小：170K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

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Bulletin I25192/B

ST780C..L SERIES

PHASE CONTROL THYRISTORS

Hockey Puk Version

1350A

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ST780C..L Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

V_DRM/V_RRM, max. repetitive

V_RSM, maximum non-

I_DRM/I_RRMmax.

@ T_J= T_Jmax

Type number

ST780C..L

Code

peak and off-state voltage

repetitive peak voltage

400

600

500

700

On-state Conduction

Parameter

ST780C..L

Units Conditions

I_T(AV)Max. average on-state current

@ Heatsink temperature

1350 (500)

55 (85)

180° conduction, half sine wave

double side (single side) cooled

°C

I_T(RMS)Max. RMS on-state current

2700

24400

25600

20550

21500

2986

DC @ 25°C heatsink temperature double side cooled

I_TSM

Max. peak, one-cycle

t = 10ms

t = 8.3ms reapplied

t = 10ms 100% V_RRM

t = 8.3ms reapplied

t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% V_RRM

t = 8.3ms reapplied

No voltage

non-repetitive surge current

Sinusoidal half wave,

Initial T_J= T_Jmax.

I²t

Maximum I²t for fusing

2726

KA²s

2112

1928

I²√t

Maximum I²√t for fusing

29860

KA²√s t = 0.1 to 10ms, no voltage reapplied

V_T(TO)Low level value of threshold

0.80

0.90

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

voltage

V_T(TO)High level value of threshold

(I > π x I_T(AV)),T_J= T_Jmax.

voltage

r_t1

Low level value of on-state

slope resistance

0.14

0.13

(16.7% x π x I_T(AV)< I < π x I_T(AV)), T_J= T_Jmax.

mΩ

r_t2

High level value of on-state

slope resistance

(I > π x I_T(AV)),T_J= T_Jmax.

V_TM

I_H

Max. on-state voltage

Maximum holding current

Typical latching current

1.31

600

= 3600A, T_J= T_Jmax, t = 10ms sine pulse

2222222222222

T_J= 25°C, anode supply 12V resistive load

I_L

1000

Switching

Parameter

ST780C..L

1000

Units Conditions

di/dt

Max. non-repetitive rate of rise

of turned-on current

Gate drive 20V, 20Ω, t ≤ 1µs

A/µs

T_J= T_Jmax, anode voltage ≤ 80% V_DRM

Gate current 1A, di /dt = 1A/µs

Typical delay time

1.0

= 0.67% V_DRM, T_J= 25°C

µs

I_TM= 750A, T_J= T_Jmax, di/dt = 60A/µs, V_R= 50V

Typical turn-off time

150

dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs

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ST780C..L Series

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 6- On-state Power Loss Characteristics

Fig. 5- On-state Power Loss Characteristics

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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ST780C..L Series

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z_thJ-hsCharacteristics

Fig. 11 - Gate Characteristics

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ST780C..L Series

Blocking

Parameter

ST780C..L

Units Conditions

V/µs T_J= T_Jmax. linear to 80% rated V_DRM

dv/dt Maximum critical rate of rise of

off-state voltage

500

I_DRM

I_RRM

Max. peak reverse and off-state

leakage current

T_J= T_Jmax, rated V_DRM/V_RRMapplied

Triggering

Parameter

Maximum peak gate power

P_G(AV)Maximum average gate power

I_GMMax. peak positive gate current

ST780C..L

Units Conditions

P_GM

10.0

2.0

T_J= T_Jmax, t ≤ 5ms

T_J= T_Jmax, f = 50Hz, d% = 50

3.0

T_J= T_Jmax, t ≤ 5ms

+V_GMMaximum peak positive

gate voltage

_J= T_Jmax, t ≤ 5ms

-V_GMMaximum peak negative

gate voltage

5.0

TYP.

MAX.

200

100

200

_J= - 40°C

I_GT

DC gate current required

to trigger

T_J25°C

Max. required gate trigger/ cur-

rent/ voltage are the lowest value

which will trigger all units 12V

anode-to-cathode applied

_J= 125°C

_J= - 40°C

2.5

1.8

1.1

V_GT

DC gate voltage required

to trigger

3.0

T_J

= 25°C

T_J= 125°C

Max. gate current/voltage not to

trigger is the max. value which

will not trigger any unit with rated

I_GD

DC gate current not to trigger

DC gate voltage not to trigger

T_J= T_Jmax

V_GD

0.25

_DRManode-to-cathode applied

Thermal and Mechanical Specification

Parameter

ST780C..L

-40 to 125

Units Conditions

°C

T_J

Max. operatingtemperaturerange

Max. storage temperature range

-40 to 150

stg

R_thJ-hsMax. thermal resistance,

junctiontoheatsink

0.073

0.031

DCoperationsinglesidecooled

DCoperationdoublesidecooled

K/W

_thC-hsMax. thermal resistance,

casetoheatsink

0.011

0.006

14700

(1500)

255

DCoperationsinglesidecooled

DCoperationdoublesidecooled

Mounting force, ± 10%

(Kg)

Approximate weight

Case style

TO - 200AC (B-PUK)

SeeOutlineTable

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ST780C..L Series

∆R_thJ-hsConduction

(The following table shows the increment of thermal resistence R_thJ-hswhen devices operate at different conduction angles than DC)

Sinusoidal conduction Rectangular conduction

Conduction angle

Units

K/W

Conditions

T_J= T_Jmax.

Single Side Double Side Single Side Double Side

180°

120°

90°

0.009

0.011

0.014

0.020

0.036

0.009

0.011

0.014

0.020

0.036

0.006

0.011

0.015

0.021

0.036

0.006

0.011

0.015

0.021

0.036

60°

30°

Ordering Information Table

Device Code

ST 78

Thyristor

Essential part number

0 = Converter grade

C = Ceramic Puk

Voltage code: Code x 100 = V_RRM(See Voltage Rating Table)

L = Puk Case TO-200AC (B-PUK)

0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)

2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)

3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

Critical dv/dt: None = 500V/µsec (Standard selection)

2222222222222

= 1000V/µsec (Special selection)

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ST780C..L Series

Outline Table

34 (1.34) DIA. MAX.

TWO PLACES

0.7 (0.03) MIN.

PIN RECEPTACLE

AMP. 60598-1

Case Style TO-200AC (B-PUK)

All dimensions in millimeters (inches)

53 (2.09) DIA. MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

20°± 5°

4.7 (0.18)

36.5 (1.44)

2 HOLES DIA. 3.5 (0.14) x

2.5 (0.1) DEEP

CREPAGE DISTANCE 36.33 (1.430) MIN.

STRIKE DISTANCE 17.43 (0.686) MIN.

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

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