STM81004G [INFINEON]

1550 nm Laser in Coaxial Package with SM-Pigtail, Medium Power; 1550纳米激光同轴封装与SM-尾纤,中等功率
STM81004G
型号: STM81004G
厂家: Infineon    Infineon
描述:

1550 nm Laser in Coaxial Package with SM-Pigtail, Medium Power
1550纳米激光同轴封装与SM-尾纤,中等功率

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STM 81004X  
STM 81005X  
1550 nm Laser in Coaxial Package with SM-Pigtail,  
Medium Power  
Designed for application in fiber-optic networks  
Laser diode with Multi-Quantum Well structure  
Suitable for bit rates up to 1 Gbit/s  
Ternary photodiode at rear mirror for monitoring and  
control of radiant power  
Hermetically sealed subcomponent, similar to TO 18  
SM Pigtail with optional flange  
Type  
Ordering Code  
Q62702-Pxxxx  
Q62702-Pxxxx  
Q62702-Pxxxx  
Q62702-Pxxxx  
Connector/Flange  
STM 81004G  
STM 81004A  
STM 81005G  
STM 81005A  
FC / without flange  
DIN / without flange  
FC / with flange  
DIN / with flange  
Component with other connector types on request.  
Maximum Ratings  
Output power ratings refer to the SM fiber output. The operating temperature of the  
submount is identical to the case temperature.  
Parameter  
Symbol  
Values  
Unit  
Module  
Operating temperature range at case  
Storage temperature range  
Soldering temperature  
TC  
40 + 85  
40 + 85  
260  
°C  
°C  
°C  
Tstg  
TS  
tmax = 10 s, 2 mm distance from bottom edge of  
case  
Semiconductor Group  
1
02.95  
STM 81004X  
STM 81005X  
Maximum Ratings (cont’d)  
Parameter  
Symbol  
Values  
Unit  
Laser Diode  
Direct forward current  
Radiant power CW  
Reverse voltage  
IF max  
Φe  
120  
2
mA  
mW  
V
VR max  
2
Monitor Diode  
Reverse voltage  
VR max  
10  
V
Characteristics  
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.  
Parameter  
Symbol  
Values  
Unit  
Laser Diode  
Optical output power  
Φe  
λ
> 1.2  
mW  
Emission wavelength center of range  
1510 1590 nm  
Φe = 0.5 mW  
Spectral bandwidth Φe = 0.5 mW (RMS)  
Threshold current (40 + 85 °C)  
Forward voltage Φe = 0.5 mW  
Radiant power at threshold  
Slope efficiency  
∆λ  
< 5  
8 60  
< 1.5  
< 40  
nm  
mA  
V
Ith  
VF  
Φeth  
η
µW  
mW/A  
20 100  
< 8  
Differential series resistance  
Rise time/fall time  
rS  
tR, tF  
< 1  
ns  
Monitor Diode  
Dark Current, VR = 5 V, Φe = 0  
Photocurrent, Φe = 0.5 mW  
IR  
IP  
< 500  
nA  
µA  
100 1000  
Semiconductor Group  
2
STM 81004X  
STM 81005X  
Laser Diode  
Relative Radiant Power  
Radiant Power in Singlemode Fiber  
Φe = f(λ)  
1.2  
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
1546 1548 1550 1552 1554  
Forward Current in mA  
Wavelength in nm  
Laser Forward Current  
IF = f(VF)  
Monitor Diode Dark Current IR = f(TA)  
Φport = 0, VR = 5 V  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1000  
100  
10  
1
0.1  
0.01  
-50  
0
50  
100  
0
0.4  
0.8  
1.2  
1.6  
Temperature in °C  
Forward Voltage in V  
Semiconductor Group  
3
STM 81004X  
STM 81005X  
Package Outlines (Dimensions in mm)  
STM 81004X  
STM 81005X  
Semiconductor Group  
4

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