T1101N30TOF [INFINEON]
Silicon Controlled Rectifier, 3450A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element;
| 型号： | T1101N30TOF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 3450A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element 栅 栅极 |
| 文件： | 总7页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datenblatt / Data sheet
N
Netz-Thyristor
Phase Control Thyristor
T 1101N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
3000
3100
V
V
Tvj = -40°C... Tvj max
VDRM,VRRM
VDRM,VRRM
PeriodischeVorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
V
V
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = 0°C... Tvj max
repetitive peak forward off-state and reverse voltages
3450 A
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
ITRMSM
ITAVM
1520 A
2200 A
Dauergrenzstrom
average on-state current
TC = 85 °C
TC = 60 °C
31000 A
29000 A
Stoßstrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
ITSM
4800 10³ A²s
4200 10³ A²s
Grenzlastintegral
I²t-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
I²t
DIN IEC 60747-6
300 A/µs
Kritische Stromsteilheit
(diT/dt)cr
(dvD/dt)cr
f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter F
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
typ.
V
Tvj = Tvj max , iT = 4000A
Tvj = Tvj max
vT
max.
2,0 V
on-state voltage
typ.
V
Schleusenspannung
threshold voltage
V(TO)
rT
max.
1 V
typ.
mΩ
Ersatzwiderstand
slope resistance
Tvj = Tvj max
max. 0,227 mΩ
typ.
A
B
C
D
A
B
C
D
Durchlaßkennlinie
Tvj = Tvj max
on-state characteristic
vT = A + B ⋅ iT + C ⋅ Ln(iT + 1) + D ⋅ iT
max.
-0,09195
0,000239
0,1933
-0,00753
max.
350
Zündstrom
Tvj = 25°C, vD = 6 V
Tvj = 25°C, vD = 6 V
IGT
VGT
IGD
VGD
IH
mA
V
gate trigger current
2,5
Zündspannung
gate trigger voltage
max.
Nicht zündender Steuerstrom
gate non-trigger current
Tvj = Tvj max , vD = 6 V
Tvj = Tvj max , vD = 0,5 VDRM
max.
max.
20 mA
10 mA
Nicht zündende Steuerspannung
gate non-trigger voltage
Tvj = Tvj max , vD = 0,5 VDRM
max.
max.
max.
max.
max.
0,4 V
350 mA
3 A
Haltestrom
holding current
Tvj = 25°C, vD = 6 V, RA = 5 Ω
Tvj = 25°C, vD = 6 V, RGK ≥ 10 Ω
Einraststrom
latching current
IL
iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
tgd
300 mA
2,5 µs
Zündverzug
gate controlled delay time
DIN IEC 60747-6
Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs
J. Przybilla
date of publication: 15.05.03
prepared by:
revision:
3
approved by: R. Keller
BIP AC, 2001-10-18, Przybilla J.
Seite/page
1/6
Datenblatt / Data sheet
N
Netz-Thyristor
Phase Control Thyristor
T 1101N
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit
Tvj = Tvj max, iTM = ITAVM
tq
circuit commutated turn-off time
vRM = 100 V, vDM = 0,67 VDRM
dvD/dt = 20 V/µs, -diT/dt = 10 A/µs
4.Kennbuchstabe / 4th letter O
typ.
400 µs
Sperrverzögerungsladung
recovered charge
Tvj = Tvj max
Qr
iTM = ITAVM, -diT/dt = 10 A/µs
VR = 0,5VRRM, VRM = 0,8VRRM
max.
mAs
Rückstromspitze
peak reverse recovery current
Tvj = Tvj max
iTM = ITAVM, -diT/dt = 10 A/µs
VR = 0,5VRRM, VRM = 0,8VRRM
IRM
max.
A
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
Anode / anode, DC
RthJC
max. 0,0129 °C/W
max. 0,012
°C/W
max. 0,0227 °C/W
max. 0,0255 °C/W
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
RthCH
0,004
0,008
max.
max.
°C/W
°C/W
einseitig / single-sided
125 °C
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj max
Tc op
Tstg
Betriebstemperatur
operating temperature
-40...+125 °C
-40...+150 °C
Lagertemperatur
storage temperature
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 3
page 3
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpresskraft
clamping force
F
27...40 kN
Steueranschlüsse
control terminals
DIN 46244
f = 50 Hz
Gate
Kathode /Cathode
A 4,8x0,8
A 6,3x0,8
Gewicht
weight
G
typ.
850 g
Kriechstrecke
creepage distance
27 mm
50 m/s²
Schwingfestigkeit
vibration resistance
Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in
Verbindung mit den zugehörigen technischen Erläuterungen.
This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging
technical notes.
BIP AC, 2001-10-18, Przybilla J.
Seite/page
2/6
Datenblatt / Data sheet
N
Netz-Thyristor
T 1101N
Phase Control Thyristor
1: Anode/Anode
2: Kathode/Cathode
4: Gate
4 5
1
2
5: Hilfskathode/
Cathode (control terminal)
BIP AC, 2001-10-18, Przybilla J.
Seite/page
3/6
Datenblatt / Data sheet
N
Netz-Thyristor
Phase Control Thyristor
T 1101N
Analytische Elemente des transienten Wärmewiderstandes Z thJC
Analytical elements of transient thermal impedance Z thJC
Pos. n
1
2
3
4
5
6
7
Rthn [°C/W] 0,00235 0,002
1,15 0,232
0,0015
0,14
0,0055
0,13
0,00065
0,0006
0,00065
0,0006
0,00065
beidseitig
two-sided
τn [s]
Rthn [°C/W] 0,01305 0,002
0,0015
0,14
0,0055
0,13
anodenseitg
anode-sided
6,6
0,232
τn [s]
Rthn [°C/W] 0,01585 0,002
0,0015
0,14
0,0055
0,13
kathodenseitig
cathode-sided
7,3
0,232
0,0006
τn [s]
nmax
-t
τn
Analytische Funktion / Analytical function:
=
−
ZthJC
Rthn 1 e
Σ
n=1
0,03
0,025
0,02
0,015
0,01
0,005
0
c
a
d
0,001
0,01
0,1
1
10
100
t [s ]
Transienter innerer Wärmewiderstand für DC/ Transient thermal impedance Z thJC = f(t) for DC
Beidseitige Kühlung / Two-sided cooling
Anodenseitige Kühlung / Anode-sided cooling
Kathodenseitige Kühlung / Cathode-sided cooling
BIP AC, 2001-10-18, Przybilla J.
Seite/page
4/6
Datenblatt / Data sheet
N
Netz-Thyristor
T 1101N
Phase Control Thyristor
9 0 0 0
8 0 0 0
7 0 0 0
6 0 0 0
5 0 0 0
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
0
m a x.
0
0 ,5
1
1 ,5
2
2 ,5
3
3 ,5
v T [V ]
Grenzdurchlaßkennlinie / Limiting on-state characteristic iT = f(vT)
Tvj = Tvj max
BIP AC, 2001-10-18, Przybilla J.
Seite/page
5/6
Datenblatt / Data sheet
N
Netz-Thyristor
T 1101N
Phase Control Thyristor
30
20
10
5
c
b
a
-40°C
2
+25°C
vG [V]
+125°C
1
0,5
0,2
10
20
50
100
200
500
1000
2000
5000 10000
iG [mA]
Steuercharakteristik vG = f (iG) mit Zündbereichen für VD = 6 V
Gate characteristic vG = f (iG) with triggering area for VD = 6 V
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) :
a - 20 W/10ms b - 40 W/1ms c - 60 W/0,5ms
BIP AC, 2001-10-18, Przybilla J.
Seite/page
6/6
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