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T485B_MPA_1 [INFINEON]

Wide Band Low Power Amplifier, 35000MHz Min, 38000MHz Max, GAAS,;
T485B_MPA_1
型号： T485B_MPA_1
厂家： Infineon    Infineon
描述：

Wide Band Low Power Amplifier, 35000MHz Min, 38000MHz Max, GAAS,

射频 微波
文件： 总5页 (文件大小：67K)
中文：  中文翻译
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T485B_MPA_1  
GaAs 38 GHz Medium Power Amplifier MMIC  
• Two-Stage Monolithic Microwave Integrated  
Circuit (MMIC) HEMT Amplifier  
• Input/Output matched to 50 Ohm  
• Frequency range: 35 GHz to 38 GHz  
• Gain > 13 dB  
• P-1dB > 17 dBm  
chip size: 1,1 mm x 1,9 mm  
• Psat > 19 dBm  
ESD: Electrical discharge sensitive device, observe handling precautions!  
Description:  
This two-stage GaAs MMIC medium power amplifier is intended for use in radio link  
applications. It provides an output power of 17 dBm at 1 dB gain compression. The device is  
fabricated with a 0.18 micron Pseudomorphic InGaAs/AlGaAs/GaAs High Electron Mobility  
Transistor processing technology.  
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T485B_MPA_1  
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Chip  
Electrical Specifications: (VG = 0.3 V, VD = 5 V, ID = 240 mA)  
Parameter  
Min  
Typ  
Max  
Unit  
GHz  
dBm  
dBm  
dB  
Frequency Range  
P-1dB @ 38GHz  
35  
38  
17  
19  
Psat @ 38GHz  
Gain @ 38GHz  
13  
Input Return Loss @ 38GHz  
Output Return Loss @ 38GHz  
-10  
-11  
dB  
dB  
Infineon Technologies AG i. Gr.  
pg. 1/5  
Preliminary data sheet 07.05.99  
This is information on a product that is under development. Data and specificatios are subject to change without notice.  
T485B_MPA_1  
0HDVXUHGꢀGDWDꢁꢀ(on chip measurments)  
VGS = 0,3 V, VDS = 5 V, IDS1 = 48 mA, IDS2 = 72 mA, unless otherwise specified  
20  
15  
dB(S21)  
10  
5
0
25  
30  
35  
40  
45  
f [GHz]  
0
-5  
-10  
-15  
-20  
dB(S22)  
dB(S11)  
25  
30  
35  
40  
45  
f [GHz]  
Infineon Technologies AG i. Gr.  
pg. 2/5  
Preliminary data sheet 07.05.99  
This is information on a product that is under development. Data and specificatios are subject to change without notice.  
T485B_MPA_1  
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6x60 um  
4x60 um  
Out  
In  
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Vd  
Vd  
λ/4  
λ/4  
Vg  
Vg  
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Drain voltage  
Gate voltage  
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V
V
VD  
VG  
5
- 2 .. + 0.8  
Infineon Technologies AG i. Gr.  
pg. 3/5  
Preliminary data sheet 07.05.99  
This is information on a product that is under development. Data and specificatios are subject to change without notice.  
T485B_MPA_1  
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Chip thickness  
Chip size  
95µm  
1,1 mm * 1,9 mm  
DC / RF Bond pads  
Bond pad material  
Chip passivation  
100 µm * 100 µm / 90 µm * 50 µm  
Au (plated gold)  
SiN (silicon nitride)  
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VG1 VD1  
VG2 VD2  
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250°C  
180°C  
100 Hz  
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250°C  
150°C  
1: 2,5 g  
2: 3,1 g  
3: 3,2 g  
4: 3,0 g  
5: 2,8 g  
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50 g  
25 µm  
25 g  
17 µm  
Infineon Technologies AG i. Gr.  
pg. 4/5  
Preliminary data sheet 07.05.99  
This is information on a product that is under development. Data and specificatios are subject to change without notice.  
T485B_MPA_1  
Published by Infineon Technologies AG i. Gr., Wireless Products Division, GaAs & Sensor  
Subdivision, WS GS PM P, Balanstraße 73, 81541 Munich, Germany; Postal Address: P.O. Box  
800949, 81609 Munich, Germany.  
copyright Infineon Technologies 1999. All Rights Reserved.  
As fas as patents or other rights of third parties are concerned, liability is only assumed for  
components per se, not for applications, processes and cirucits implemented within components  
or assemblies.  
The information describes the type of component and shall not be considered as assured  
characteristics.  
Terms of delivery and rights to change design reserved.  
For questions on technology, delivery, and prices please contact the Offices of Infineon in  
Germany or the Infineon Companies and Representatives worldwide.  
Due to technical requirements components may contain dangerous substances. For information  
on the type in question please contact your nearest Infineon Office.  
Infineon Technologies AG i. Gr. is an approved QS9000 and ISO9001 manufacturer.  
Infineon Technologies AG i. Gr.  
pg. 5/5  
Preliminary data sheet 07.05.99  
This is information on a product that is under development. Data and specificatios are subject to change without notice.  

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