TAE4453A [INFINEON]
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| 型号： | TAE4453A |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 运算放大器 |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TAE 4453
TAF 4453
Quad PNP-Operational Amplifier
Bipolar IC
Features
● Supply voltage range between 3 V and 36 V
● Low current consumption, 1.6 mA typ.
● Extremely large control range
● Low output saturation voltage,
almost independent of load current
● Output current up to 70 mA (100 mA max.)
● Output virtually short-circuit proof
● Wide common-mode range
P-DSO-14-1
● Wide temperature range (TAF 4453 G)
● Pin-compatible to LM 324
● The typical characteristics of the electric
parameters correspond to those of the
TAE 1453 G
Applications
● Amplifier
● Level converter
● Driver
● Offset voltage switch
● Comparator
Type
Ordering Code
Q67000-A2152
Q67000-A2213
Package
TAE 4453 G
TAF 4453 G
P-DSO-14-1 (SMD)
P-DSO-14-1 (SMD)
The TAE 4453 / TAF 4453 consists of four independent, frequency-compensated op
amps, each having a PNP-input differential stage and an open collector output. The
integrated regulator provides for all parameters a large degree of independence of the
supply voltage.
Semiconductor Group
1
01.96
TAE 4453
TAF 4453
Pin Configurations
(top view)
TAE 4453 G
TAF 4453 G
RL = load resistance (collector resistance)
Connection Diagram
Semiconductor Group
2
TAE 4453
TAF 4453
Circuit Diagram of One Op Amp
Semiconductor Group
3
TAE 4453
TAF 4453
Absolute Maximum Ratings (TAE 4453 G)
Parameter
Symbol
Limit Values
± 18
Unit
V
Supply voltage
Output current
VS
IQ
100
mA
V
Differential input voltage
VID
± VS
Junction temperature
Storage temperature range
Tj
Tstg
150
– 55 to 125
°C
°C
Thermal resistance
system - air
TAE 4453 G
Rth SA
120
K/W
V
Operating Range (TAE 4453 G)
Supply voltage
VS
TA
± 2 to ± 18
(± 1.5 V with slightly
increased offset voltage)
Ambient temperature
– 25 to 85
°C
Characteristics (TAE 4453 G)
VS = ± 5 Vto ± 15 V; RL = 10 kΩ, unless otherwise specified
Parameter
Symbol
Limit Values
TA = 25 °C
Limit Values Unit
TA = – 25
to 85 °C
min. typ.
max. min. max.
Open-loop supply
current consumption, total
IS
1.6
40
3.0
5.5
3.6
7
mA
mV
Input offset voltage,
RG = 50 Ω
VIO
– 5.5
– 15
– 7
Input offset current
Input current
IIO
II
15
150
– 25
25
200
nA
nA
Control range
RL = 2 kΩ, VS = ± 15 V
RL = 620 Ω, VS = ± 15 V
VQ pp
VQ pp
14.9
14.9
– 14.7 14.9
– 14.5 14.9
– 14.7
– 14.4
V
V
Semiconductor Group
4
TAE 4453
TAF 4453
Characteristics (TAE 4453 G) (cont’d)
VS = ± 5 Vto ± 15 V; RL = 10 kΩ, unless otherwise specified
Parameter
Symbol
Limit Values
TA = 25 °C
Limit Values Unit
TA = – 25
to 85 °C
min. typ.
max. min. max.
Input impedance, f = 1 kHz
ZI
200
85
kΩ
Open-loop voltage gain
GV0
80
80
dB
RL = 2 kΩ
Output reverse current
IQR
VIC
10
20
µA
Common-mode input
voltage range
RL = 2 kΩ
– VS
– 0.2
+ VS – VS + VS
V
– 1.8
100
– 2.0
Common-mode rejection
RL = 2 kΩ
kCMR
kSVR
75
80
25
75
dB
Supply voltage rejection
100
µV/V
GV = 100
Temperature coefficient of IIO αIIO
RG = 50 Ω
Temperature coefficient of VIO αVIO
RG = 50 Ω
0.1
6
nA/K
µV/K
Slew rate
for non-inverting operation
Slew rate
for inverting operation
SR
SR
0.65
1.1
0.25
0.5
1.0
1.6
V/µs
V/µs
Semiconductor Group
5
TAE 4453
TAF 4453
Characteristics (TAE 4453 G)
VS = ± 2 V
Parameter
Symbol
Limit Values
TA = 25 °C
Limit Values Unit
TA = – 25
to 85 °C
min.
typ.
max. min.
max.
Input offset voltage,
VIO
– 6
6
– 7.5 7.5
mV
RG = 50 Ω
Input offset current
Input current
IIO
II
– 15
70
15
150
– 100 100
200
nA
nA
40
Open-loop voltage gain;
GV0
70
dB
RL = 2 kΩ
Absolute Maximum Ratings (TAF 4453 G)
Parameter
Symbol
VS
Limit Values
± 18
Unit
V
Supply voltage
Output current
IQ
100
mA
V
Differential input voltage
VID
± VS
Junction temperature
Storage temperature range
Tj
Tstg
150
– 55 to 125
°C
°C
Thermal resistance
system - air
TAF 4453 G
Rth SA
120
K/W
Operating Range (TAF 4453 G)
Supply voltage
VS
TA
± 2 to ± 18
(± 1.5 V with slightly
increased offset voltage)
V
Ambient temperature
Semiconductor Group
– 55 to 125
°C
6
TAE 4453
TAF 4453
Characteristics (TAF 4453 G)
VS = ± 5 Vto ± 15 V; RL = 10 kΩ, unless otherwise specified
Parameter
Symbol
Limit Values
TA = 25 °C
Limit Values Unit
TA = – 55
to 125 °C
min. typ.
max. min. max.
Open-loop supply
current consumption, total
mA
mV
IS
1.6
40
3.0
4
3.6
6
Input offset voltage,
RG = 50 Ω
VIO
– 4
– 6
Input offset current
Input current
IIO
II
– 10
10
100
– 15 15
nA
nA
150
Control range
RL = 2 kΩ, VS = ± 15 V
RL = 620 Ω, VS = ± 15 V
VQ pp
VQ pp
14.9
14.9
– 14.7 14.8
– 14.5 14.8
– 14.7
– 14.4
V
V
Input impedance, f = 1 kHz
ZI
200
87
kΩ
Open-loop voltage gain
GV0
85
80
dB
RL = 2 kΩ
Output reverse current
IQR
VIC
1
5
µA
Common-mode input
voltage range
RL = 2 kΩ
– VS
– 0.2
+ VS – VS + VS
– 1.5 + 0.2 – 1.8
V
Common-mode rejection,
RL = 2 kΩ
kCMR
kSVR
80
85
25
75
dB
Supply voltage rejection,
100
100
µV/V
GV = 100
Semiconductor Group
7
TAE 4453
TAF 4453
Characteristics (TAF 4453 G) (cont’d)
VS = ± 5 Vto ± 15 V; RL = 10 kΩ, unless otherwise specified
Parameter
Symbol
Limit Values
TA = 25 °C
Limit Values Unit
TA = – 55
to 125 °C
min. typ.
max. min. max.
Temperature coefficient of IIO αIIO
RG = 50 Ω
Temperature coefficient of VIO αVIO
RG = 50 Ω
0.1
6
0.8
25
0.8
25
nA/K
µV/K
Slew rate
for non-inverting operation
Slew rate
for inverting operation
SR
SR
0.65
1.1
0.2
0.4
0.65 V/µs
1.7 V/µs
Characteristics (TAF 4453 G)
VS = ± 2 V
Parameter
Symbol
Limit Values
TA = 25 °C
Limit Values Unit
TA = – 55
to 125 °C
min. typ.
max. min. max.
Input offset voltage,
RG = 50 Ω
VIO
– 4
– 50
75
4
– 6
– 75
70
6
mV
Input offset current
Input current
IIO
II
50
100
75
150
nA
nA
40
Open-loop voltage gain
GV0
dB
RL = 2 kΩ
Note: For typical performance curves, please refer to the data sheets of TAE 1453
and TAF 1453.
Semiconductor Group
8
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