TDA16832G [INFINEON]
Off-line SMPS Controller with 600 V Sense CoolMOS on Board; 离线SMPS控制器,船上600 V SENSE的CoolMOS型号: | TDA16832G |
厂家: | Infineon |
描述: | Off-line SMPS Controller with 600 V Sense CoolMOS on Board |
文件: | 总21页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Off-line SMPS Controller with
600 V Sense CoolMOS on Board
TDA16831-4
CoolSET
Preliminary Data
Overview
Features
• PWM controller + sense CoolMOS
attached in one compact package
• 600 V avalanche rugged CoolMOS
• Typical RDSon = 0.5 ... 3.5 Ω at Tj = 25 °C
• Only 4 active Pins
P-DIP-8-6
• Standard DIP-8 Package for
Output Power ≤40 W
• Only few external components required
• Low start up current
• Current mode control
• Input Undervoltage Lockout
• Max. Duty Cycle limitation
• Thermal Shutdown
• Modulated Gate Drive for low EMI
P-DSO-14-11
Type
Ordering Code
Q67000-A9420
Q67000-A9422
Q67000-A9389
samples
Package
TDA 16831
TDA 16832
TDA 16833
TDA 16834
TDA 16831G
TDA 16832G
TDA 16833G
P-DIP-8-6
P-DIP-8-6
P-DIP-8-6
P-DIP-8-6
Q67000-A9421
Q67000-A9423
Q67000-A9419
P-DSO-14-11
P-DSO-14-11
P-DSO-14-11
Data Sheet
1
1999-12-10
TDA 16831-4
Device
Output Power Range/
Required Heatsink1)
Output Power Range/
Required Heatsink1)
Vin = 190-265 VAC
10 W / no heatsink
20 W / no heatsink
40 W / no heatsink
40 W / no heatsink
10 W / no heatsink
20 W / no heatsink
40 W / 3 cm2
Vin = 85-270 VAC
10 W / no heatsink
20 W / 6 cm2
30 W / 3 cm2
40 W / 3 cm2
TDA 16831
TDA 16832
TDA 16833
TDA 16834
TDA 16831G
TDA 16832G
TDA 16833G
10 W / no heatsink
20 W / 8 cm2
20 W / no heatsink
1)
TA = 70 °C
Data Sheet
2
1999-12-10
TDA 16831-4
Pin Configurations
N.C.
FB
1
2
3
4
8
7
6
GND
VCC
N.C.
D
N.C.
D
5
AEP02782
Figure 1
TDA 16831/2/3/4
P-DIP-8-6 for Applications with Pout ≤ 40 W: TDA 16831/2/3/4
Pin
1
Symbol
N.C.
FB
Function
Not Connected
2
PWM Feedback Input
Not Connected
3
N.C.
D
4
600 V Drain CoolMOS
600 V Drain CoolMOS
Not Connected
5
D
6
N.C.
VCC
GND
7
PWM Supply Voltage
PWM GND and Source of CoolMOS
8
Data Sheet
3
1999-12-10
TDA 16831-4
GND
FB
N.C.
N.C.
D
1
2
3
4
5
6
7
14
13
12
11
10
9
GND
VCC
N.C.
N.C.
D
D
D
D
8
D
AEP02783
Figure 2
TDA 16831G/2G/3G
P-DSO-14-11 for Applications with Pout ≤ 20 W: TDA 16831G/2G/3G
Pin
Symbol
GND
FB
Function
1
PWM GND and CoolMOS Source
PWM Feedback Input
Not Connected
2
3
N.C.
N.C.
D
4
Not Connected
5, 6, 7
600 V Drain CoolMOS
600 V Drain CoolMOS
Not Connected
8, 9, 10 D
11
12
13
14
N.C.
N.C.
VCC
Not Connected
PWM Supply Voltage
PWM GND and Source of CoolMOS
GND
Data Sheet
4
1999-12-10
FB
Drain
uvlo
bandgap
bias
tempshutdown
RFB
Vcc
Vref
pwmcomp
pwmss
logpwm
biaspwm
pwmop
gtdrv
R
S
Q
Q
rlogpwm
slogpwm
pwmrmp
alogpwm
v04sst
osc
Rsense
csshutdown
tff
slogpwm
pwmpls
3
J
kippl
5
K
GND
TDA 16831-4
Circuit Description
Oscillator (osc)
The oscillator is generating a frequency
twice the switching frequency
switch = 100 kHz. Resistor, capacitor and
current source which determine the
frequency are integrated. The charging
The TDA 16831-4 is a current mode pulse
width modulator with integrated sense
CoolMOS transistor. It fulfills the
requirements of minimum external control
circuitry for a flyback application.
f
and
discharging
current
of
the
Current mode control means that the
current through the MOS transistor is
compared with a reference signal derived
from the output voltage of the flyback
application. The result of that comparison
determines the on time of the MOS
transistor.
implemented oscillator capacitor is
internally trimmed, in order to achieve a
very accurate switching frequency.
Temperature coefficient of switching
frequency is very low ( see page 19).
Divider Flip Flop (tff)
To minimize external circuitry the sense
resistor which gives information about
MOS current is integrated. The oscillator
resistor and capacitor which determine the
switching frequency are integrated, too.
Tff is a flip flop which divides the oscillator
frequency by one half to create the
switching frequency. The maximum duty
cycle is set to Dmax = 0.5.
Special efforts have
compensate temperature dependency and
to minimize tolerances of this resistor.
been made to
Current Sense Amplifier (pwmop)
The positive input of the pwmop is applied
to the internal sense resistor. With the
internal sense resistor (Rsense) the sensed
current coming from the CoolMOS is
converted into a sense voltage. The sense
voltage is amplified with a gain of 32 dB.
The amplified sense voltage is connected
to the negative input of the pwm
comparator. Each time when the CoolMOS
transistor is switched on, a current spike is
superposed to the true current information.
To eliminate this current spike the sense
voltage is smoothed via an internal resistor
capacitor network with a time constant of
Td1 = 100 ns. This is the first leading edge
blanking and only a small spike is left. To
reduce this small spike the current sense
amplifier is creating a virtual ramp at the
output. This is done by a second resistor
capacitor network with Td2 = 100 ns and an
op-offset of 0.8 V which is seen at the
output of the amplifier. When gate drive is
The circuit in detail: (see Figure 3)
Start Up Circuit (uvlo)
Uvlo is monitoring the external supply
voltage VCC. When VCC is exceeding the on
threshold VCCH = 12 V, the bandgap, the
bias circuit and the soft start circuit are
switched on. When VCC is falling below the
off-threshold VCCL = 9 V the circuit is
switched off. During start up the current
consumption is about 30 µA.
Bandgap (bg)
The bandgap generates an internal very
accurate reference voltage of 5.5 V to
supply the internal circuits.
Current Source (bias)
The bias circuit provides the internal
circuits with constant current.
Data Sheet
6
1999-12-10
TDA 16831-4
switched off the output capacitor is Logic (logpwm)
discharged via pulse signal pwmpls. The
The logic logpwm comprises a RS-flip-flop
and a NAND-gate. The NAND-gate
insures that CoolMOS transistor is only
switched on when sosta is on and pwmin
has exceeded minimum threshold and
oscillator signal slogpwm sets the RS-flip-
flop. The gate drive circuit is switched on,
when capacitor voltage exceeds the
internal threshold of 0.4 V. This leads to a
linear ramp, which is created by the output
of the amplifier. Therefore duty cycle of
0 % is possible. The amplifier is
compensated through an internal compen-
sation network.
pwmin
is
below
pwmrmp
and
currentshutdown is off and tempshutdown
is off and tff sets the starting impulse.
CoolMOS transistor is switched off when
pwmrmp exceeds pwmin or duty cycle
exceeds 0.5 or pwmcs exceeds Imax or
silicium temperature exceeds Tmax or uvlo
is going below threshold. The RS flip flop
ensures that with every frequency period
only one switch on can occur (double pulse
suppression).
The transfer function of the amplifier can
be described as
Vo
----- = -----------------------------------; p = jω
Vi p × (1 + T × p)
Ki
Gate Drive (gtdrv)
Gtdrv is the driver circuit for the CoolMOS
and is optimized to minimize EMI
influences and to provide high circuit
efficiency. This is done by smoothing the
switch on slope when reaching the
CoolMOS threshold. Leading switch on
spike is minimized then. When CoolMOS
is witched off, the falling slope of the gate
driver is slowed down when reaching 2 V.
So an overshoot below ground can't occur.
Also gate drive circuit is designed to
eliminate cross conduction of the output
stage.
the step response is described with
-t
on
T
æ
---------ö
V = V × K × t – T + T × e
ç
on
÷
o
i
i
è
40
Ki = -----
ton
T = 850 ns
Comparator (pwmcomp)
The comparator pwmcomp compares the
amplified current signal pwmrmp of the
CoolMOS with the reference signal pwmin.
Pwmin is created by an external
optocoupler or external transistor and
gives the information of the feedback
circuitry. When the pwmrmp exceeds the
reference signal pwmin the comparator
switches the CoolMOS off.
Current Shut Down (cssd)
Current shut down circuit switches the
CoolMOS immediately off when the sense
current is exceeding an internal threshold
of 100 mV at Rsense
.
Data Sheet
7
1999-12-10
TDA 16831-4
Tempshutdown (tsd)
Tempshutdown switches the CoolMOS off
when junction temperature of the PWM
controller is exceeding an internal
threshold.
Data Sheet
8
1999-12-10
TDA 16831-4
kippl,
f = 200 kHz
(oscillator)
pwmpls,
(tff)
f = 100 kHz
slogpwm
(tff)
VFB
Gate Start
at 0.4 V
op-offset = 0.8 V
pwmrmp
(pwmop)
alogpwm
(pwmcomp)
rlogpwm
(pwmcomp)
gtrdrv
Q
(logpwm)
AED02766
Figure 4
Signal Diagram
Data Sheet
9
1999-12-10
TDA16831-4
Electrical Characteristics
Absolute Maximum Ratings
Parameter
Symbol Limit Values Unit Remarks
min.
max.
Supply Voltage
VCC
ICCZ
– 0.3
VZ
V
Zener Voltage 1)
page 11
2)
Supply + Zener Current
0
20
mA Beware of Pmax
Drain Source Voltage
Avalanche Current
VDS
IAC
600
Icsthmax
V
t = 100 ns
Voltage at FB
VFB
Tj
– 0.3
– 40
– 50
5.5
V
Junction Temperature
Storage Temperature
150
150
°C
°C
Tstg
Thermal Resistance System-Air RthSA
90
K/W P-DIP-8-6
RthSA
125
K/W P-DSO-14-11
1)
Be aware that VCC capacitor is discharged before IC is plugged into the application board.
Power dissipation should be observed.
2)
Operating Range
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
VZ
Supply Voltage
VCC
Tj
VCCH
V
Junction Temperature
– 25
120
°C
Data Sheet
10
1999-12-10
TDA 16831-4
Supply Section
-25 °C < Tj < 120 °C, VCC = 15 V
Parameter
Symbol
Limit Values
Unit Test Conditions
min. typ. max.
Quiescent Current
ICCL
25
4.5
6
80
6
µA
Supply Current Active
Supply Current Active
Supply Current Active
ICCHA
ICCHA
ICCHA
mA TDA 16831/2/G
7.5 mA TDA 16833/G
8.5 mA TDA 16834
7
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
VCC Zener Clamp
VCCH
VCCL
VCCHY
VZ
12
9
3
12.5 V
8.5
16
V
V
V
17.5 19
Controller Thermal Shutdown
Thermal Hysteresis
TjSD
TjHy
120 135 150 °C
TDA 16831/2/3/G/4
2
°C
Oscillator Section
-25 °C < Tj < 120 °C, VCC = 15 V
Parameter
Symbol
Limit Values
Unit Test Conditions
min. typ. max.
Accuracy
f
90
100 110 kHz
ppm/°C
Temperature Coefficient
TK f
1000
Data Sheet
11
1999-12-10
TDA16831-4
PWM Section
Parameter
Symbol
Limit Values
Unit Test Conditions
min. typ. max.
Duty Cycle
D
0
0.5
2)
Trans Impedance ∆VFB / ∆IDrain
ZPWM
ZPWM
ZPWM
Bw
4
2
1.3
2
70
V/A TDA16831/G
V/A TDA16832/G
V/A TDA16833/G/4
OP Gain Bandwidth 1)
OP Phase Margin 1)
MHz
degree
Phim
VFB Operating Range min. Level VFBmin
VFB Operating Range max. Level VFBmax 3.5
0.45
0.85 V
4.8
for D = 0
Ics = 0.95 Icsth
V
Feedback Resistance
RFB
3.0 3.7 4.9 KΩ
ppm/°C
Temperature Coefficient RFB
Internal Reference Voltage
Temperature Coefficient Vrefint
RFBTK
Vrefint
Vreftk
600
5.3 5.5 5.7
0.2
V
mV/°C
1) Guaranteed by design
2)
For discontinuous mode the VFB is described by:
-t
-t
on
on
æ
ç
---------ö
æ
---------ö
T
T
IPK
VFB = ZPWM × ------- × ton – T1 + T1 × e
1
2
÷
÷
ç
÷
+ 0.6 × 1 – e
ç
è
ç
è
÷
ton
T1 = 850 ns; T2 = 200 ns
Data Sheet
12
1999-12-10
TDA 16831-4
i
Output Section
Parameter
Symbol
Limit Values
Unit Test Conditions
min. typ. max.
Drain Source Breakdown Voltage V(BR)DSS 600
V
TA = 25 °C
Drain Source On-Resistance
TA = 25 °C:
RDson
RDson
RDSon
3.5
1
0.5
Ω
Ω
Ω
TDA 16831/2/G
TDA 16833/G
TDA 16834
-25<TA<120 °C:
TDA 16831/2/G
TDA 16833/G
TDA 16834
RDson
RDSon
RDson
9
2.7
1.6
Ω
Ω
Ω
Zero Gate Voltage Drain Current IDSS
0.5 50
25
Icsthmax
µA
VGS = 0
Output Capacitance
COSS
IAR
pF TDA 16833
A
Avalanche Current
tDR = 100 ns
I
source Current Limit Threshold
Icsth
Icsth
Icsth
Icsth
tcsth
0.6 0.9 1.4
1.2 1.8 2.7
2.2 2.9 4.8
2.2 2.9 4.8
300
A
A
A
A
TDA 16831/G
TDA 16832/G
TDA 16833/G
TDA 16834
Time Constant Icsth
ns
Rise Time
Fall Time
trise
tfall
70
50
ns
ns
Data Sheet
13
1999-12-10
TDA 16831-4
Application Circuit
Vcc
Drain
TDA18831-4
CoolMOS
PWM
Controller
FB
AC
85...270VAC
GND
Figure 5
TDA 16831G/2G/3G: 4 Active Pins, Version without Soft Start
Data Sheet
14
1999-12-10
TDA 16831-4
Quiescent Current versus
Temperature
Supply Current Active versus
Temperature
AED02767
AED02768
30
6
ICCL
I
TDA 16833
CCH mA
µ
A
25
20
15
10
5
5.5
5
TDA 16831/2
4.5
4
3.5
0
3
-25
0
25
50
75
˚C 125
-25
0
25
50
75
˚C 125
T
T
Turn On/Off Supply Voltage versus
Temperature
Turn On/Off Hysteresis
AED02770
AED02769
2.9
12.5
V
12
VCCHY
VCC
V
VCCH
2.85
11.5
11
2.8
10.5
10
2.75
2.7
9.5
9
VCCL
2.65
8.5
2.6
8
-25
0
25
50
75
˚C 125
-25
0
25
50
75
˚C 125
T
T
Data Sheet
15
1999-12-10
TDA 16831-4
VCC Zener Clamp
Switching Frequency versus
Temperature
AED02771
AED02772
19
110
VZ
f
kHz
V
18.5
18
106
104
102
100
98
17.5
17
96
94
16.5
92
16
90
-25
0
25
50
75
˚C 125
-25
0
25
50
75
˚C 125
T
T
Maximum Duty Cycle versus
Temperature TDA 16831/2/3/G/4
Operational Amplifier Phase and
Amplitude versus Frequency
AED02774
AED02773
40
0
50
%
ϕ
A
Grad
dB
30
-40
49
48.5
48
A
/dB
-60
20
10
0
-80
-100
-120
-140
-160
-180
-200
47.5
47
ϕ /Grad
46.5
46
-10
45.5
-20
45
100
101
102
104
kHz
-25
0
25
50
75
˚C 125
f
T
Data Sheet
16
1999-12-10
TDA 16831-4
Feedback Voltage Operating Range
versus Temperature
Feedback Voltage versus
Feedback Current
AED02776
AED02775
6
5
VFB
VFB
V
V
For ICS = 0.95 ICSTH
5
4
3
4
3.5
3
2.5
2
Temp = 25
2
1.5
Temp = 130
1
1
For D = 0
25
0.5
0
0
0
0.5
1
mA
1.5
-25
0
50
75
˚C 125
IFB
T
R
DSon versus Temperature
TDA 16833 Output Capacitance COSS
versus VDS
AED02778
AED02777
100
8
COSS
RDSON
pF
Ω
7
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
TDA 16831
TDA 16833
40
50
60
70
80
V
100
-25
0
25
50
75
˚C 125
VDS
T
Data Sheet
17
1999-12-10
TDA 16831-4
I
source Current Limit Threshold Icsth
Normalized Overcurrent Shutdown
versus Drain Current Slope
versus Temperature
AED02780
AED02779
IDrain
ICSTH
6
5
4
3
2
3.5
ICSTH
A
TDA 16833
3
2.5
2
TDA 16831
TDA 16832
TDA 16833
1.5
TDA 16832
TDA 16831
1
1
0.5
0
0
0
2
4
6
A /µs 10
-25
0
25
50
75
˚C 125
d
I
t
T
d
Data Sheet
18
1999-12-10
TDA 16831-4
Package Outlines
P-DIP-8-6
(Plastic Dual In-line Package)
Data Sheet
19
1999-12-10
TDA16831-4
P-DSO-14-11
(Plastic Dual Small Outline)
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Dimensions in mm
1999-12-10
SMD = Surface Mounted Device
Data Sheet
20
TDA 16831-4
TDA 16831-4
Revision History:
Current Version: 1999-11-08
Previous Version:
Page
(in previous (in current
Version) Version)
Page
Subjects (major changes since last revision)
Published by Infineon Technologies AG i. Gr.,
Bereichs Kommunikation, St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and
charts stated herein.
Infineon Technologiesis an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Tech-
nologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Data Sheet
21
1999-12-10
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