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TLE4274GV10 [INFINEON]

Low-Drop Voltage Regulator; 低压差稳压器
TLE4274GV10
型号： TLE4274GV10
厂家： Infineon    Infineon
描述：

Low-Drop Voltage Regulator
低压差稳压器

稳压器
文件： 总13页 (文件大小：83K)
中文：  中文翻译
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Low-Drop Voltage Regulator  
TLE 4274  
Features  
• Output voltage tolerance ≤ ± 4 %  
• Low-drop voltage  
• Very low current consumption  
• Short-circuit proof  
• Reverse polarity proof  
• Suitable for use in automotive electronics  
P-TO220-3-1  
P-TO252-3-1  
P-TO263-3-1  
Type  
Ordering Code Package  
TLE 4274 V10  
TLE 4274 V85  
TLE 4274 V50  
Q67000-A9258 P-TO220-3-1  
Q67000-A9257 P-TO220-3-1  
Q67000-A9256 P-TO220-3-1  
TLE 4274 D V50 Q67006-A9331 P-TO252-3-1  
TLE 4274 G V10 Q67006-A9261 P-TO263-3-1  
TLE 4274 G V50 Q67006-A9259 P-TO263-3-1  
TLE 4274 G V85 Q67006-A9260 P-TO263-3-1  
SMD = Surface Mounted Device  
Functional Description  
The TLE 4274 is a low-drop voltage regulator in a  
TO220 package. The IC regulates an input voltage up  
to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85) and 10 V  
(V10). The maximum output current is 400 mA. The IC  
is short-circuit proof and incorporates temperature  
protection that disables the IC at over temperature.  
Dimensioning Information on External Components  
The input capacitor CI is necessary for compensating line influences. Using a resistor of  
approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can  
be damped. The output capacitor CQ is necessary for the stability of the regulation circuit.  
Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating  
temperature range.  
Semiconductor Group  
1
1998-11-01  
TLE 4274  
Circuit Description  
The control amplifier compares a reference voltage to a voltage that is proportional to the  
output voltage and drives the base of the series transistor via a buffer. Saturation control  
as a function of the load current prevents any oversaturation of the power element. The  
IC also incorporates a number of internal circuits for protection against:  
• Overload  
• Overtemperature  
• Reverse polarity  
Pin Configuration (top view)  
P-TO220-3-1  
P-TO252-3-1  
P-TO263-3-1  
GND  
Ι
Q
AEP02512  
Ι
GND Q  
AEP02281  
Ι
GND Q  
AEP01957  
Figure 1  
Pin Definitions and Functions  
Pin No. Symbol Function  
1
I
Input; block to ground directly at the IC with a ceramic  
capacitor.  
2
3
GND  
Q
Ground  
Output; block to ground with a ≥ 22 µF capacitor.  
Semiconductor Group  
2
1998-11-01  
TLE 4274  
Saturation  
Control and  
Protection  
Circuit  
Temperature  
Sensor  
1
3
Ι
Q
Control  
Amplifier  
Buffer  
Bandgap  
Reference  
2
GND  
AEB01959  
Figure 2  
Block Diagram  
Semiconductor Group  
3
1998-11-01  
TLE 4274  
Absolute Maximum Ratings  
Tj = – 40 to 150 °C  
Parameter  
Symbol  
Limit Values  
Unit Test Condition  
min.  
max.  
Voltage Regulator  
Input  
Voltage  
VI  
II  
– 42  
–
45  
–
–
V
Current  
Internally limited  
–
Output  
Voltage  
Current  
VQ  
IQ  
– 1.0  
–
40  
–
V
–
–
Internally limited  
Ground  
Current  
IGND  
–
100  
mA  
–
Temperature  
Junction temperature  
Storage temperature  
Tj  
–
150  
150  
°C  
°C  
–
–
Tstg  
– 50  
Note: Maximum ratings are absolute ratings; exceeding any one of these values may  
cause irreversible damage to the integrated circuit.  
Operating Range  
Parameter  
Symbol  
Limit Values  
Unit Remarks  
min.  
5.5  
9.0/10.5 40/40  
max.  
Input voltage  
VI  
Tj  
40  
V50  
V85/V10  
V
Junction temperature  
– 40  
150  
°C  
–
Thermal Resistance  
Junction ambient  
Junction ambient  
Junction case  
Rthja  
Rthja  
Rthjc  
–
–
–
65  
70  
4
K/W TO220  
K/W TO2521), TO263  
K/W –  
1)  
Soldered in, min. footprint  
Semiconductor Group  
4
1998-11-01  
TLE 4274  
Characteristics  
VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified)  
Parameter  
Symbol  
Limit Values  
min. typ. max.  
Unit Measuring Conditions  
Output voltage  
V50-Version  
VQ  
VQ  
VQ  
IQ  
4.8  
8.16  
9.6  
400  
–
5
5.2  
8.84  
10.4  
–
5 mA < IQ < 400 mA  
6 V < VI < 40 V  
V
Output voltage  
V85-Version  
8.5  
10  
5 mA < IQ < 400 mA  
9.5 V < VI < 40 V  
V
Output voltage  
V10-Version  
5 mA < IQ < 400 mA  
11 V < VI < 40 V  
V
Output current  
limitation1)  
600  
100  
mA  
µA  
–
Current  
Iq  
220  
IQ = 1 mA  
consumption;  
Iq = II – IQ  
Current  
consumption;  
Iq = II – IQ  
Drop voltage1)  
Load regulation  
Line regulation  
Iq  
–
8
15  
mA  
IQ = 250 mA  
IQ = 400 mA  
Iq  
–
–
20  
30  
mA  
mV  
Vdr  
250  
500  
IQ = 250 mA  
Vdr = VI – VQ  
–
–
–
–
20  
10  
60  
0.5  
50  
25  
–
mV  
mV  
dB  
IQ = 5 mA to  
400 mA  
∆VQ  
∆Vl = 12 V to 32 V  
IQ = 5 mA  
∆VQ  
Power supply  
ripple rejection  
fr = 100 Hz;  
Vr = 0.5 VSS  
PSRR  
Temperature  
output voltage  
drift  
–
mV/K –  
dV  
--------Q--  
dT  
1)  
Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.  
Semiconductor Group  
5
1998-11-01  
TLE 4274  
Ι Ι  
Ι Q  
Output  
1
3
Input  
C
C
Q
22 µF  
Ι
µ
100  
F
100 nF  
TLE 4274  
R
V
V
Q
L
Ι
2
AES01960  
Figure 3  
Measuring Circuit  
3
1
Input  
Output  
TLE 4274  
C
C
Q
Ι
2
AES01961  
Figure 4  
Application Circuit  
Semiconductor Group  
6
1998-11-01  
TLE 4274  
Typical Performance Characteristics (V50, V85 and V10):  
Drop Voltage Vdr versus  
Output Current IQ  
Output Current IQ versus  
Input Voltage VI  
AED01963  
AED01962  
800  
600  
mA  
mV  
V
dr  
Ι
Q
600  
T = 125 C  
j
400  
300  
200  
100  
0
T
V
= 25 C  
= 0 V  
j
Q
400  
200  
0
T = 25 C  
j
=
V
V
QNOM-0.1 V  
dr  
0
10  
20  
30  
40  
50  
V
0
100  
200  
300  
400  
mA  
V
Ι
Ι
Q
Current Consumption Iq versus  
Output Current IQ (high load)  
Current Consumption Iq versus  
Output Current IQ (low load)  
AED02268  
AED02267  
0.6  
60  
mA  
mA  
T j = 25 C  
Ι q  
T j = 25 C  
Ι q  
V Ι = 13.5 V  
V Ι = 13.5 V  
0.4  
0.3  
0.2  
0.1  
0
40  
30  
20  
10  
0
0
10  
20  
30  
40  
60  
mA  
0
100 200 300 400  
600  
mA  
Ι Q  
Ι Q  
Semiconductor Group  
7
1998-11-01  
TLE 4274  
Typical Performance Characteristics (V50):  
Output Voltage VQ versus  
Junction Temperature Tj  
Current Consumption Iq versus  
Input Voltage VI  
AED01966  
AED02269  
5.20  
30  
V
V
Q
mA  
5.10  
5.00  
4.90  
4.80  
4.70  
4.60  
Ι q  
V = 13.5 V  
Ι
20  
T j = 25 C  
RL = 20  
Ω
10  
0
-40  
0
40  
80  
120  
160  
C
0
10  
20  
30  
50  
V
T
VΙ  
j
Output Voltage VQ versus  
Input Voltage VI  
Input Current II versus  
Input Voltage VI  
AED01977  
AED01968  
3.5  
6
mA  
V
Ι
V
V
Ι
3.0  
Q
Q
5
4
2.5  
2.0  
T
= 25 C  
j
V =V  
Ι
Q
R
= 10 kΩ  
L
1.5  
1.0  
0.5  
0
3
2
T
= 25  
C
j
R
= 20 Ω  
L
1
-2  
0
-50  
-25  
0
25  
50  
V
0
2
4
6
8
10  
V
V
V
Ι
Ι
Semiconductor Group  
8
1998-11-01  
TLE 4274  
Typical Performance Characteristics for V85:  
Output Voltage VQ versus  
Junction Temperature Tj  
Current Consumption Iq versus  
Input Voltage VI  
AED01970  
AED02270  
9.0  
30  
V
V
Q
mA  
Ι q  
V = 13.5 V  
Ι
8.5  
8.0  
7.5  
20  
T j = 25 C  
RL = 20  
Ω
10  
0
-40  
0
40  
80  
120  
160  
C
0
10  
20  
30  
50  
V
T
VΙ  
j
Output Voltage VQ versus  
Input Voltage VI  
Input Current II versus  
Input Voltage VI  
AED01973  
AED01972  
3.5  
mA  
12  
V
Ι
V
Ι
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
Q
10  
V
Q
8
T
= 25 C  
j
V =V  
Ι
Q
R
= 8.5 kΩ  
L
6
4
2
0
T
= 25 C  
j
R
= 34 Ω  
L
-2  
-50  
-25  
0
25  
50  
V
0
4
8
12  
16  
V
20  
V
V
Ι
Ι
Semiconductor Group  
9
1998-11-01  
TLE 4274  
Typical Performance Characteristics for V10:  
Output Voltage VQ versus  
Junction Temperature Tj  
Current Consumption Iq versus  
Input Voltage VI  
AED01974  
AED02270  
10.5  
30  
V
V
Q
mA  
Ι q  
V = 13.5 V  
Ι
10.0  
9.5  
20  
T j = 25 C  
RL = 20  
Ω
10  
0
9.0  
-40  
0
40  
80  
120  
160  
C
0
10  
20  
30  
50  
V
T
VΙ  
j
Output Voltage VQ versus  
Input Voltage VI  
Input Current II versus  
Input Voltage VI  
AED01977  
AED01976  
3.5  
mA  
12  
V
Ι
V
V
Ι
3.0  
Q
Q
10  
2.5  
2.0  
8
T
= 25 C  
j
V =V  
Ι
Q
R
= 10 kΩ  
L
1.5  
1.0  
0.5  
0
6
T
= 25 C  
j
R
= 34 Ω  
L
4
2
-2  
0
-50  
-25  
0
25  
50  
V
0
4
8
12  
16  
V
20  
V
V
Ι
Ι
Semiconductor Group  
10  
1998-11-01  
TLE 4274  
Package Outlines  
P-TO220-3-1  
(Plastic Transistor Outline)  
±0.2  
10  
A
±0.15  
9.8  
B
8.51)  
4.4  
3.7-0.15  
1.27±0.1  
0.05  
C
±0.1  
0.5  
0...0.15  
3x  
0.75  
2.4  
±0.1  
1.05  
2.54  
M
0.25  
A B C  
GPT05155  
1)  
Typical  
All metal surfaces tin plated, except area of cut.  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”  
Dimensions in mm  
Semiconductor Group  
11  
1998-11-01  
TLE 4274  
P-TO252-3-1  
(Plastic Transistor Single Outline)  
+0.15  
6.5  
-0.10  
+0.05  
-0.10  
2.3  
A
+0.08  
0.9  
-0.04  
B
±0.1  
5.4  
0...0.15  
0.15 max  
per side  
3x  
0.75  
+0.08  
0.5  
±0.1  
-0.04  
2.28  
±0.1  
1
4.57  
M
0.25  
A B  
0.1  
GPT09051  
All metal surfaces tin plated, except area of cut.  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”  
Dimensions in mm  
SMD = Surface Mounted Device  
Semiconductor Group  
12  
1998-11-01  
TLE 4274  
P-TO263-3-1  
(Plastic Transistor Single Outline)  
±0.2  
10  
4.4  
±0.15  
9.8  
±0.1  
1.27  
B
A
8.5 1)  
0.1  
0.05  
2.4  
0...0.15  
±0.1  
0.75  
±0.1  
1.05  
2.54  
5.08  
M
0.25  
A B  
0.1  
1)  
Typical  
All metal surfaces tin plated, except area of cut.  
Sorts of Packing  
Package outlines for tubes, trays etc. are contained in our  
Data Book “Package Information”  
Dimensions in mm  
SMD = Surface Mounted Device  
Semiconductor Group  
13  
1998-11-01  

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