TLE493D-W2B6 A2_技术文档

TLE493D-W2B6

Low Power 3D Hall Sensor with I2C Interface and Wake Up Function

1

Overview

Quality Requirement Category: Automotive | Industry

PG-TSOP6-6-8

Features

•

3D magnetic flux density sensing of ±160 mT.

Programmable flux resolution down to 65 µT (typ.).

X-Y angular measurement mode

Diagnostic measurements to check digital parts, analog parts and Hall probe of the sensor

Power down mode with 7 nA (typ) power consumption

12-bit data resolution for each measurement direction plus 10-bit temperature sensor

Variable update frequencies and power modes (configurable during operation)

Temperature range T_j= -40°C…125°C, supply voltage range = 2.8 V…3.5 V

Triggering by external µC possible via I²C protocol

Interrupt signal to indicate a valid measurement to the microcontroller

Applications

The TLE493D-W2B6 is designed for all kinds of sensing applications, including the following:

•

Gear stick position

Control elements in the top column module and multi function steering wheel

Multi function knobs

Pedal/valve position sensing

Benefits

•

Component reduction due to 3D magnetic measurement principle

Wide application range addressable due to high flexibility

Platform adaptability due to device configurability

Supporting functional safety by means of integrated diagnostics

Very low system power consumption due to Wake Up mode

Disturbance of smaller stray fields are neglectable compared to the high magnetic flux measurement

range

Data Sheet

www.infineon.com

1

Ver. 1.2

2019-04-09

TLE493D-W2B6

Overview

Table 1

Ordering Information

Product Type

Marking¹⁾

Ordering Code

Package

Default address

write / read

TLE493D-W2B6 A0

TLE493D-W2B6 A1

TLE493D-W2B6 A2

TLE493D-W2B6 A3

EC

ED

EE

EF

SP001605334

SP001605340

SP001605344

SP001605348

PG-TSOP6-6-8

6A_H/ 6B_H

44_H/ 45_H

F0_H/ F1_H

88_H/ 89_H

1) Engineering samples are marked with “SA”.

Data Sheet

2

Ver. 1.2

2019-04-09

TLE493D-W2B6

Table of Contents

1

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2

2.1

2.1.1

2.1.2

2.1.3

2.2

2.3

2.4

2.5

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Power mode control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Wake Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Definition of Magnetic Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Sensitive Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3

Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Temperature Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Overview of Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Interface and Timing Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

3.1

3.2

3.3

3.4

3.5

3.6

3.7

4

4.1

4.2

Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Package Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

5

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Data Sheet

3

Ver. 1.2

2019-04-09

TLE493D-W2B6

Functional Description

2

Functional Description

This three dimensional Hall effect sensor can be configured by the microcontroller. The measurement data is

provided in digital format to the microcontroller. The microcontroller is the master and the sensor is the slave.

It also provides test functions and the capability to wake up a sleeping system.

2.1

General

Description of the Block diagram and its functions.

F-OSC

LP-OSC

Power Mode Control

VDD

GND

Bias

Wake Up

SCL; /INT

Lateral

Hall plates

Z-Direction

Comparator

Digital tracking,

demodulation &

I²C interface

ADC

MUX

SDA

Vertical

Hall plates

Y-Direction

Temperature

Figure 1

Block Diagram

The IC consists of three main functional units containing the following building blocks:

•

The power mode control system, containing a low-power oscillator, basic biasing, accurate restart,

undervoltage detection and a fast oscillator.

The sensing unit, which contains the HALL biasing, HALL probes with multiplexers and successive tracking

ADC, as well as a temperature sensor is implemented.

The I2C interface, containing the register files and I/O pads

2.1.1

Power mode control

The power mode control provides the power distribution in the IC, a power-on reset function and a specialized

low-power oscillator as the clock source. It also manages the start-up behavior.

•

On start-up, this unit:

–

activates the biasing, provides an accurate reset detector and fast oscillator

sensor enters low power mode and can be configured via I2C interface

•

After re-configuration, a measurement cycle is performed, which consists of the following steps:

–

activating internal biasing, checking for the restart condition and providing the fast oscillator

HALL biasing

measuring the three HALL probe channels sequentially (including the temperature). This is enabled by

default

–

reentering configured mode

Data Sheet

4

Ver. 1.2

2019-04-09

TLE493D-W2B6

Functional Description

In any case functions are only executed if the supply voltage is high enough, otherwise the restart circuit will

halt the state machine until the required level is reached and restart afterwards. The functions are also

restarted if a restart event occurs in between (see parameter ADC restart level).

2.1.2

Sensing

Measures the magnetic field in X, Y and Z direction. Each X-, Y- and Z-Hall probe is connected sequentially to a

multiplexer, which is then connected to an Analog to Digital Converter (ADC). Optional, the temperature

(default = activated) can be determined as well after the three Hall channels.

2.1.3

Wake Up

For each of the three magnetic channels (X/Y/Z), the Wake Up function has an upper and lower comparison

threshold. Each component of the applied field is compared to the lower and upper threshold. If one of the

results is above or below these thresholds, an interrupt pulse /INT is generated. This is called a Wake Up

function. The sensor signals a certain field strength change to the microcontroller. As long as all components

of the field stay within the envelope, no interrupt signal will be provided. Note however that the /INT can also

be inhibited during I²C activities, by activated collision avoidance. An Wake Up interrupt /INT is the logical OR

among all Wake Up interrupt envelopes of the three channels.

2.2

Pin Configuration (top view)

Figure 2 shows the pinout of the TLE493D-W2B6.

Figure 2

TLE493D-W2B6 pinout

Table 2

Pin No.

1

TSOP6 pin description and configuration (see Figure 2)

Name

Description

SCL

Interface serial clock pin (input)

/INT

Interrupt pin, signals a finished measurement cycle, open-drain

2

3

4

5

6

GND

VDD

GND

SDA

Connect to GND

Ground Pin

Supply Pin

Connect to GND

Interface serial data pin (input/output), open-drain

Data Sheet

5

Ver. 1.2

2019-04-09

TLE493D-W2B6

Functional Description

2.3

Definition of Magnetic Field

A positive field is considered as South-Pole facing the corresponding Hall element.

Figure 3 shows the definition of the magnetic directions X, Y, Z of the TLE493D-W2B6.

Figure 3

Definition of Magnetic Field Direction

2.4

Sensitive Area

The magnetic sensitive area for the Hall measurement is shown in Figure 4.

Figure 4

Center of Sensitive Area (dimensions in mm)

Data Sheet

6

Ver. 1.2

2019-04-09

TLE493D-W2B6

Functional Description

2.5

Application Circuit

The use of an interrupt line is optional, but highly recommended to ensure proper and efficient readout of the

sensor data.

The pull-up resistor values of the I2C bus have to be calculated in such a way as to fulfill the rise- and fall time

specification of the interface for the given worst case parasitic (capacitive) load of the actual application

setup.

Please note: too small resistive R1/2 values have to be prevented to avoid unnecessary power consumption

during interface transmissions, especially for low-power applications.

V_DD

Power

Supply

R₁

R₂

GND

R_SDA

V_DD

SDA

TLE493D

C_Buf

R_SCL

C₁

µC

SCL

(/INT)

GND

R1 = 1.2kΩ

R2 = 1.2kΩ

C1 = 100nF

Optional (recommended for wire harness): R_SDA, R_SCL

SDA, SCL capacitance < 200 pF each, including all stray capacitances

Figure 5

Application Circuit with external power supply and µC

For additional EMC precaution in harsh environments, C₁may be implemented by two 100 nF capacitors in

parallel, which should be already given by C_Bufnear the µC and/or power supply.

Data Sheet

7

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

3

Specification

This sensor is intended to be used in an automotive environment. This chapter describes the environmental

conditions required by the device (magnetic, thermal and electrical).

3.1

Absolute Maximum Ratings

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Furthermore, only single error cases

are assumed. More than one stress/error case may also damage the device.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During

absolute maximum rating overload conditions the voltage on V_DDpin with respect to ground (GND) must not

exceed the values defined by the absolute maximum ratings.

Table 3

Absolute Maximum Ratings

Symbol

Parameter

min

-40

-0.3

–

typ

–

max

125

3.5

±1

Unit

°C

V

Note/Condition

Junction temperature

Voltage on V_DD

T_j

V_DD

B_max

V_max

–

Magnetic field

–

T

Voltage range on any pin to

GND

-0.1

–

3.5

V

open-drain outputs are not

current limited.

Table 4

Ambient temperature T_A= 25°C

ESD Protection¹⁾

Parameter

Symbol

Values

Unit

Note or Test Condition

Min.

Typ.

Max.

ESD voltage (HBM)²⁾

ESD voltage (CDM)³⁾

V_ESD

–

±2.0

±0.75

±0.5

kV

R = 1.5 kΩ, C = 100 pF

for corner pins

all pins

1) Characterization of ESD is carried out on a sample basis, not subject to production test.

2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.

3) Charged Device Model (CDM), ESD susceptibility according to JEDEC JESD22-C101.

Data Sheet

8

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

3.2

Operating Range

To achieve ultra low power consumption, the chip does not use a conventional, power-consuming restart

procedure. The focus of the restart procedure implemented is to ensure a proper supply for the ADC operation

only. So it inhibits the ADC until the sensor supply is high enough.

Table 5

Operating Range

Symbol

Parameter

min

-40

2.8

typ

–

max

125

3.5

Unit

°C

Note/Condition

Operating temperature T_j

T_j= T_a+3 K in fast mode

Supply voltage

V_DD

3.3

V

Supply voltage must be above

restart level

ADC restart level

V_res

2.2

–

2.5

50

–

2.8

–

V

min. ADC operating level

ADC restart hysteresis

Register stable level

V_res-hys

V_reg

mV

V

–

2.5

Register values are stable above

this voltage level

The sensor relies on a proper supply ramp defined with t_PUP, V_OUSand I_DD-PUP, see Figure 6. The I²C reset feature

of the sensor shall be used by the µC after Power Up. If supply monitoring is used in the system (e.g. brown-

out detector etc.), it is also recommended to use the I²C reset of the sensor following events detected by this

monitor.

In any case, an external supply switch (either provided by a System-Basis-Chip solution which includes a

supply-enable feature, a Bias-Resistor-Transistor device, a capable µC GPIO pin, etc.) shall allow a power-

cycle of the sensor as backup for high availability applications to cope with any form of V_DDramps (including

potential EMC influences), see Figure 6.

At Power Up, SDA and SCL shall be pulled to V_DDusing R1 and R2 of Figure 5 and not be driven to low by any

device or µC on SDA and SCL.

V_DD

3.3V

t_PUP

t_APC

t

Figure 6

V_DDpower up and power-cycle for high availability

Data Sheet

9

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

Table 6

V_DDpower up and power-cycle

Parameter

Symbol

min

–

typ

–

max

10

Unit

µs

V

Note/Condition

Power Up ramp time

Availability power cycle¹⁾t_APC

t_PUP

–

150

3.3

400

3.5

Power Up over-

undershoot

V_OUS

3

Envelope which must not be

exceeded at the end of a Power Up.

Power Up current

consumption

I_DD-PUP

–

10

mA

Current consumption during t_PUP

1) Not subject to production test - verified by design.

3.3

Electrical Characteristics

This sensor provides different operating modes and a digital communication interface. The corresponding

electrical parameters are listed in Table 7. Regarding current consumption more information are available in

Chapter 3.6.

Table 7

Electrical Setup

Values for V_DD= 3.3 V ±5 %, T_j= -40°C to +125°C (unless otherwise specified)

Parameter

Supply current ¹⁾

Symbol min typ

max Unit Note/Condition

130 nA T_j= 25°C; power down mode

Fast mode

I_{DD_pd}

I_{DD_fm}

V_IL

–

7

1

3.4

–

5

mA

Input voltage low threshold²⁾

Input voltage high threshold²⁾

Input voltage hysteresis²⁾

–

30

–

%V_DDall input pads

V_IH

70

5

–

V_IHYS

–

Output voltage low level @ 3 mA load V_OL

–

0.4

V

all output pads, static load

1) Currents at pull up resistors (Figure 5) needs to be considered for power supply dimensioning.

2) Based on I²C standard 1995 for V_DDrelated input levels

Data Sheet

10

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

3.4

Magnetic Characteristics

The magnetic parameters are specified for an end of line production scenario and for an application life time

scenario.

The magnetic measurement values are provided in the two’s complement with 12 bit or 8 bit resolution in the

registers with the symbols Bx, By and Bz. Two examples, how to calculate the magnetic flux are shown in

Table 11 and Table 12.

Table 8

Values for T_j= +25°C, 0 h and V_DD= 3.3 V (unless otherwise specified)

Initial Magnetic Characteristics¹⁾

Parameter

Symbol

min

typ

max

Unit

Note/Condition

Magnetic linear range²⁾(full range)

Magnetic linear range²⁾³⁾(short range) B_{xyz_LINSR}

B_{xyz_LIN}

±160 ±200 ±230 mT

±100 ±135 ±150 mT

-40°C < T_j< +125°C

Sensitivity X, Y, Z (full range)

Sensitivity X, Y, Z (short range)

Sx, Sy, Sz

Sx_SR, Sy_SR, Sz_SR11

-1.8

5.5

7.7

10.5

21

LSB₁₂/

mT

15.4

±0.2

Z-Offset (full range and short range) B_0Z

+1.8

mT

XY-Offset (full range and short range) B_0xy

-0.75 ±0.2

+0.75 mT

X to Y magnetic matching⁴⁾

M_XY

-15

-25

95

±1

+15

+25

182

91

%

Up to min.

X/Y to Z magnetic matching⁴⁾

Resolution, 12-bit⁵⁾(full range)

Resolution, 12-bit⁵⁾(short range)

Resolution, 8-bit⁵⁾(full range)

Resolution, 8-bit⁵⁾(short range)

M_X/YZ

Res₁₂

Res_{12_SR}

Res₈

0

B_{xyz_LIN}or B_{xyz_LINSR}

130

65

µT/

LSB₁₂

47.5

1.52

0.76

–

2.08

1.04

0.1

2.91

1.46

0.5

mT/

LSB₈

Res_{8_SR}

B_ineff

Magnetic initial noise (rms)

(full range and short range)

mT

rms = 1 sigma

Magnetic hysteresis ²⁾

(full range and short range)

B_HYS

–

1

–

LSB₁₂due to quantization

effects

1) Magnetic test on wafer level. It is assumed that initial variations are stored and compensated in the external µC during

module test and calibration.

2) Not subject to production test - verified by design/characterization.

3) The short range setting does not have an analogue saturation behavior due to internal offsets and the compensation

thereof.

4) See the magnetic matching definition in Equation (3.1) and Equation (3.2).

5) Resolution is calculated as 1/Sensitivity (and multiplied by 16 for 8-bit value).

Equation for parameter “X to Y magnetic matching”:

(3.1)

(3.2)

ꢅꢆꢃ ꢇ ꢅꢈ

ꢅꢆ ꢉ ꢅꢈ

ꢀ_ꢁꢂꢃꢄ 100ꢃ ∙ 2ꢃ ∙ꢃ

ꢃꢊ%ꢋ

Equation for parameter “X/Y to Z magnetic matching”:

ꢅꢆ ꢉ ꢅꢈꢃ ꢇ 2ꢃ ∙ ꢅꢍ

ꢅꢆ ꢉ ꢅꢈ ꢉ 2ꢃ ∙ ꢅꢍ

ꢀ_ꢁ/ꢂꢌꢃꢄ ꢃ100ꢃ ∙ 2ꢃ ∙ꢃ

ꢃꢊ%ꢋ

Data Sheet

11

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

Table 9

Sensor Drifts¹⁾valid for both full range and short range (unless indicated)

Values for V_DD= 3.3 V ±5 %, T_j= -40°C to 125°C, static magnetic field within full magnetic linear range (unless

otherwise specified)

Parameter

Symbol

min

typ

±5

–

max

+15

Unit

%

Note/Condition

Sensitivity drift X, Y, Z

Offset drift X, Y

Offset drift Z

Sx_D, Sy_D, Sz_D-15

TC₀

B_{O_DXY}

B_{O_DZ}

-0.45

+0.45 mT

+1.6 mT

+0.45 mT

@ 0 mT, TC₀

-1.6

-0.45

-3.5

-15

–

@ 0 mT, TC₀

Offset drift Z

–

@ 0 mT, TC₀, Z Hall spintest

X to Y magnetic matching drift²⁾M_{XY_D}

X/Y to Z magnetic matching drift²⁾M_{X/YZ_D}

±1

±10

+3.5

+15

%

TC₀

1) Not subject to production test, verified by design/characterization. Drifts are changes from the initial characteristics

due to external influences.

2) See the magnetic matching definition in Equation (3.1) and Equation (3.2).

Table 10

Values for V_DD= 3.3 V ±5 %, T_j= -40°C to 125°C (unless otherwise specified)

Temperature compensation, non-linearity and noise¹⁾

Parameter

Temperature compensation²⁾

(full range and short range)

Symbol min

typ

±0

max

Unit

Note/Condition

TC₀

TC₁

TC₂

TC₃

DNL

–

ppm/K Bx, By and Bz (default)

Bx, By and Bz (option 1)

Bx, By and Bz (option 2)

Bx, By and Bz (option 3)

LSB₁₂Bx, By and Bz

-750

-1500

+350

±2

–

Differential Non Linearity (full range)

–

Differential Non Linearity (short range) DNL_SR

±4

–

Integral Non Linearity (full range)

Integral Non Linearity (short range)

Magnetic noise (rms)

INL

±2

–

LSB₁₂Bx, By and Bz

INL_SR

B_Neff

±4

–

1

mT

rms = 1 sigma

Z-Magnetic noise (rms)

B_NeffZ

B_NeffXY

–

0.5

0.25

rms = 1 sigma,

-40°C < T_j< +85°C

XY-Magnetic noise (rms)

–

1) Not subject to production test, verified by design/characterization.

2) TC_Xmust be set before magnetic flux trimming and measurements with the same value.

Data Sheet

12

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

Conversion register value to magnetic field value:

Table 11

Magnetic conversion table for 12Bit

MSB

Bit10 Bit9

Bit8

256

1

Bit7

128

0

Bit6

64

0

Bit5

32

0

Bit4

16

0

Bit3

8

Bit2

4

Bit1

2

LSB

1

[Dec]

-2048 1024 512

[Bin] e.g. 1

1

The conversion is realized by the two’s complement. Please use following table for transformation:

Example for 12-bit read out: 1111 0000 1111_B: -2048 + 1024 + 512 + 256 + 0 + 0 + 0 + 0 + 8 + 4 + 2 +1 = -241 LSB₁₂

Calculation of magnetic flux: -241 LSB₁₂* 0.13 mT/LSB₁₂= -31.3 mT

Table 12

Magnetic conversion table for 8Bit

MSB

-128

0

Bit10

64

Bit9

32

0

Bit8

16

1

Bit7

8

Bit6

4

Bit5

2

LSB

1

[Dec]

[Bin] e.g.

1

0

1

Example for 8-bit read out: 0101 1101_B: 0 + 64 + 0 + 16 + 8 + 4 + 0 + 1 = 93 LSB₈

Calculation of magnetic flux: 93 LSB₈* 2.08 mT/LSB₈= 193.4 mT

3.5

Temperature Measurement

By default, the temperature measurement is activated. The temperature measurement can be disabled if it is

not needed and to increase the speed of repetition of the magnetic values.

Table 13

Temperature Measurement Characteristics¹⁾

Parameter

Symbol

T₂₅

min

1000

0.21

–

typ

max

1360

0.27

–

Unit

Note/Condition

Digital value @ 25°C

Temperature resolution, 12-bit

Temperature resolution, 8-bit

1180

0.24

3.84

LSB₁₂

T_Res12

T_Res8

K/LSB₁₂

K/LSB₈

referring to T_j

1) The temperature measurement is not trimmed on the sensor. An external μC can measure the sensor during module

production and implement external trimming to gain higher accuracies.

Temperature values are based on 12 bit resolution. Please note: only bit 11 ... 2 are listed in the bitmap registers.

Table 14

Temperature conversion table for 12Bit

The bits MSB to Bit2 are read out from the temperature value registers. Bit1 and LSB are added to get a 12-bit

value for calculation.

MSB

-2048

0

Bit10

1024

1

Bit9

512

0

Bit8

256

1

Bit7

128

0

Bit6

64

0

Bit5

32

1

Bit4

16

0

Bit3

8

Bit2

4

[Dec]

[Bin] e.g.

1

Example for 12-bit calculation: 0110 1010 11_B: 0 + 1024 + 0 + 256 + 0 + 0 + 32 + 0 + 8 + 4 = 1324 LSB₁₂

Calculation to temperature: (1324 LSB₁₂- 1180 LSB₁₂) * 0.24 K/LSB₁₂+ 25°C ≈ 60°C

Data Sheet

13

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

3.6

Overview of Modes

For a good adaptation on application requirements this sensor is equipped with different modes. An overview

is listed in Table 15.

Table 15

Mode

Overview of modes¹⁾

Measurements

2)

Typ. f_Update

–

Description

Power Down

No measurements

Bx, By, Bz, T

Bx, By, Bz

Bx, By

Lowest possible supply current I_DD.

Low Power Mode

(full range and

short range)

0.05 Hz - 770 Hz Cyclic measurements and ADC-conversions

(8 steps)

with different update rates.

Fast Mode

(full range)

Bx, By, Bz, T

Bx, By, Bz

Bx, By

5.7 kHz

7.5 kHz

8.4 kHz

4.2 kHz

5.5 kHz

6.2 kHz

Measurements and ADC conversions are

running continuously.

An I2C clock speed ≥ 800 kHz and use of the

interrupt /INT is required.

Fast Mode

(short range)

Bx, By, Bz, T

Bx, By, Bz

Bx, By

Master-Controlled Mode Bx, By, Bz, T

Up to Fast Mode Measurements triggered by the

values. microcontroller via I2C.

(full range and

short range)

Bx, By, Bz

Bx, By

1) Not subject to production test - verified by design/characterization.

2) This is the frequency at which specified measurements are updated.

I2C triggered Master-Controlled Mode typical I_DDcurrent consumption estimation formula:

Equation I_DDfull range

(3.3)

(3.4)

ꢎ_ꢏꢏꢐ ꢎ_{ꢑꢑˍꢒꢓ}∙ 0.18ꢃꢓꢔꢃ ∙ ꢒ

ꢕꢖꢗꢘꢙꢚ

Equation I_DDshort range

ꢎ_ꢏꢏꢐ ꢎ_{ꢑꢑˍꢒꢓ}∙ 0.24ꢃꢓꢔꢃ ∙ ꢒ_{ꢕꢖꢗꢘꢙꢚ}

The average supply current I_DDin the 8 Low Power Modes and I2C triggered mode will decrease by about 25 %

if the temperature measurement is disabled and will decrease by about 50% if the temperature and Bz

measurement is disabled.

Data Sheet

14

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

3.7

Interface and Timing Description

This chapter refers to how to set the boundary conditions in order to establish a proper interface

communication.

Table 16

Interface and timing¹⁾

Parameter

Symbol min

typ

2.5

40

max Unit Note/Condition

End of Conversion /INT pulse

t_INT

1.8

30

3.2

50

μs

low-active (when activated)

read after rising /INT edge

Time window to read first value

(full range)

t_RD1

Time window to read first value

(short range)

t_{RD1_SR}

t_RDn

t_{RDn_SR}

t_{clk_E}

42

32

44

-25

56

43

59

–

70

μs

%

read after rising /INT edge

consecutive reads

Time window to read next value

(full range)

54

Time window to read next value

(short range)

74

consecutive reads

Internal clock accuracy

I2C timings

+25

Allowed I2C bit clock frequency²⁾

Low period of SCL clock

High period of SCL clock

f_{I2C_clk}

t_L

–

400

–

1000 kHz

0.5

0.4

–

μs

1.3 μs for 400-kHz mode

0.6 μs for 400-kHz mode

t_H

–

SDA fall to SCL fall hold time

t_STA

–

(hold time start condition to clock)

SCL rise to SDA rise su. time

(setup time clock to stop condition)

t_STOP

t_WAIT

0.4

–

μs

0.6 μs for 400-kHz mode

SDA rise to SDA fall hold time

(wait time from stop to start cond.)

SDA setup before SCL rising

SDA hold after SCL falling

Fall time SDA/SCL signal³⁾

Rise time SDA/SCL signal³⁾

t_SU

0.1

0

–

μs

µs

t_HOLD

t_FALL

t_RISE

–

0.25

0.5

0.3

–

R = 1.2 kΩ

1) Not subject to production test - verified by design/characterization

2) Dependent on R-C-combination on SDA and SCL. Ensure reduced capacitive load for speeds above 400 kHz.

3) Dependent on used R-C-combination.

The fast mode, shown in Figure 7, requires a very strict I²C behavior synchronized with the sensor conversions

and high bit rates. In this mode, a fresh measurement cycle is started immediately after the previous cycle was

completed.

Other modes are available for more relaxed timing and also for a synchronous microcontroller operation of

sensor conversions. In these modes, a fresh measurement cycle is only started if it is triggered by an internal

or external trigger source.

In the default measurement configuration (Bx, By, Bz and T), shown in Figure 7, the measurement cycle ends

after the temperature measurement.

In 3-channel measurement configuration (Bx, By and Bz), the temperature channel is not converted and

updated. Thus, the measurement cycle ends after the Bz measurement.

Data Sheet

15

Ver. 1.2

2019-04-09

TLE493D-W2B6

Specification

In X/Y angular measurement configuration (Bx and By), the Bz and temperature channel are not converted and

updated. Thus, the measurement cycle ends after the By measurement.

*) setup/hold time for i2c readout to register value.

first register

address is0,

trigger bits are0

SCL falling edge SCL falling edge SCL falling edge SCL falling edge

shadowed LSBs

from prev.

MSBs read

status output starts

with odd parity bit of

last 6bytes transmitted

time must be either:

or:

addressing options;

R/W bit is1

@ ACK bit

1

reads X[n-1]

reads Y[n-1]

reads Z[n-1]

reads T[n-1]

t_S/H

≥

t_S/H

≤

-

f_{i2 c_clk}

(update after read)

u(pdate before read)

i2c bus protocol

SCL / SDA

X[n-1]_LSBsZ[n-1]_LSBs

Y[ n- 1]_LSBsT[n-1]_LSBs

S

i2c_adr sens_reg X[n-1]_MSBsY[n-1]_MSBsZ[n-1]_MSBsT[n-1]_MSBs

STATUS

P

S

i2 c_adr sens_reg X[n-1]_MSBs

MÆ S MÆ S SÆ M

transmission direction

MÆ S

SÆ M

t_S/H*)

corresponds to10 bit addressing:

two bytes following a S condition

(i2c standard 1995, section 13.1)

µC can start

readout after

/INT (=SCL) is

high again

t_S/H*)

t

_S/H*)

/INT (= SCL pin)

X value register

t_INT

1 / update_rate (fast mode)

t_RDn

t_RD1

X[n-1]

t_RDn

t_RD1

X[n]

Y[n-1]

Y[n]

Y value register

Z value register

T value register

Z[n-1]

By

Z[n]

T[n-1]

T[n]

Bx

ADC conversion

chan. (fast mode)

Bx

Bz

T

Figure 7

I²C readout frame, ADC conversion and related timing

t_RISE

t_FALL

t_H

t_L

t_STOP

t_WAIT

t_STA

70% V_DD

30% V_DD

SCL

70% V_DD

30% V_DD

SDA

t_HOLD

t_SU

1 bit transfer

I²C timing specification

STOP cond.

START cond.

Figure 8

Data Sheet

16

Ver. 1.2

2019-04-09

TLE493D-W2B6

Package Information

4

Package Information

4.1

Package Parameters

Table 17

Package Parameters

Symbol

Parameter

Limit Values

Unit

Notes

Min.

–

Typ. Max.

Thermal resistance¹⁾

Junction ambient

R_thJA

R_thJL

–

200

K/W

Junction to air

for PG-TSOP-6-6-8

Thermal resistance

Junction lead

–

100

Junction to lead

for PG-TSOP-6-6-8

Soldering moisture level²⁾

MSL 1

260°C

1) According to Jedec JESD51-7

2) Suitable for reflow soldering with soldering profiles according to JEDEC J-STD-020D.1 (March 2008)

Figure 9

Image of TLE493D-W2B6 in TSOP6

Figure 10 Footprint PG-TSOP6-6-8 (compatible to PG-TSOP6-6-5, all dimensions in mm)

Data Sheet

17

Ver. 1.2

2019-04-09

TLE493D-W2B6

Package Information

4.2

Package Outlines

Figure 11 Package Outlines (all dimensions in mm)

Data Sheet

18

Ver. 1.2

2019-04-09

TLE493D-W2B6

Package Information

Figure 12 Packing (all dimensions in mm)

Further information about the package can be found here:

http://www.infineon.com/cms/packages/SMD_-_Surface_Mounted_Devices/TSOP/TSOP6.html

Data Sheet

19

Ver. 1.2

2019-04-09

TLE493D-W2B6

Revision History

5

Revision History

Page or Item

Subjects (major changes since previous revision)

Ver. 1.2, 2019-04-09

Chapter 3.2 text “I²C reset” updated.

Ver. 1.1, 2019-02-08

Figure 4, Figure 11 and Figure 12 updated.

Ver. 1.0, 2018-01-24

Initial version

Data Sheet

20

Ver. 1.2

2019-04-09

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on technology, delivery terms

Edition 2019-04-09

Published by

Infineon Technologies AG

81726 Munich, Germany

event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest

characteristics ("Beschaffenheitsgarantie").

Infineon Technologies Office (www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer's compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer's products and any use of the product of

Infineon Technologies in customer's applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer's technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to

such application.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies office.

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or any

consequences of the use thereof can reasonably be

expected to result in personal injury.

a written document signed by

Document reference


型号：	TLE493D-W2B6 A2
厂家：	Infineon
描述：	Infineon´s 3D magnetic sensor family TLE493D offers accurate three dimensional sensing with extremely low-power consumption. Within its small 6-pin package the sensor provides direct measurement of the x-, y-, and z components of a magnetic field.Thus the sensor family is ideally suited for the measurement of:
文件：	总21页 (文件大小：926K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TLE493D-W2B6 A2 [INFINEON]

相关型号：

TLE493D-W2B6 A3

TLE493D-W2B6A0

TLE493D-W2B6A1

TLE493D-W2B6A2

TLE493D-W2B6A3

TLE493DA2B6HTSA1

TLE493DW2B6A1HTSA1

TLE493DW2B6A2HTSA1

TLE493DW2B6A3HTSA1

TLE4941

TLE4941-1C

TLE4941-1C-HT