U2905 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | U2905 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91334E
IRLR/U2905
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2905)
l Straight Lead (IRLU2905)
l Advanced Process Technology
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.027Ω
G
ID = 42Aꢀ
S
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D-Pak
T O -252AA
I-Pak
TO -251AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
42 ꢀ
30
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
160
110
0.71
± 16
210
25
PD @TC = 25°C
PowerDissipation
W
W/°C
V
LinearDeratingFactor
VGS
EAS
IAR
Gate-to-SourceVoltage
Single Pulse Avalanche Energy
AvalancheCurrent
mJ
A
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
Peak Diode Recovery dv/dt
OperatingJunctionand
11
mJ
V/ns
5.0
-55 to + 175
TSTG
StorageTemperatureRange
SolderingTemperature, for10seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.4
50
Units
RθJC
RθJA
RθJA
Case-to-Ambient(PCBmount)**
Junction-to-Ambient
–––
°C/W
–––
110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
12/8/00
IRLR/U2905
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
––– ––– 0.027
––– ––– 0.030
––– ––– 0.040
VGS = 10V, ID = 25A
VGS = 5.0V, ID = 25A
VGS = 4.0V, ID = 21A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
StaticDrain-to-SourceOn-Resistance
W
VGS(th)
gfs
GateThresholdVoltage
1.0
21
––– 2.0
––– –––
V
S
ForwardTransconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 48
––– ––– 8.6
––– ––– 25
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = -16V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
84 –––
26 –––
15 –––
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 3.4Ω, VGS = 5.0V
RD = 1.1Ω, See Fig. 10
Betweenlead,
D
LD
LS
InternalDrainInductance
InternalSourceInductance
–––
4.5
–––
nH
6mm(0.25in.)
G
frompackage
––– 7.5 –––
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
InputCapacitance
––– 1700 –––
––– 400 –––
––– 150 –––
OutputCapacitance
pF
VDS = 25V
ReverseTransferCapacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
42 ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 160
S
p-n junction diode.
VSD
trr
DiodeForwardVoltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 80 120
––– 210 320
V
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L =470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
ꢀCaculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRLZ44N data and test conditions.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
www.irf.com
IRLR/U2905
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
12V
12V
10V
10V
8.0V
6.0V
4.0V
3.0V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
J
J
1
1
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
I
= 41A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
100
10
1
TJ = 175°C
V
DS= 25V
V
= 10V
20µs PULSE W IDTH
G S
A
9.0 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
2.0
3.0
4.0
5.0
6.0
7.0
8.0
T
J
, Junction Tem perature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLR/U2905
2800
15
12
9
I
= 25A
V
C
C
C
= 0V,
f = 1M Hz
D
G S
iss
= C
+ C
+ C
,
C
SHORTE D
V
V
= 44V
= 28V
gs
gd
ds
DS
DS
= C
gd
2400
2000
1600
1200
800
rss
oss
= C
ds
gd
C
iss
C
C
oss
rss
6
3
400
FO R TEST CIRCUIT
SEE FIGURE 13
0
0
A
A
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10µs
100
100µs
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
S ingle Pulse
G S
A
10
1
A
0.4
0.8
1.2
1.6
2.0
2.4
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRLR/U2905
RD
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR/U2905
500
400
300
200
100
0
I
D
TO P
10A
17A
25A
1 5V
B OTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
25
75
100
125
150
175
Starting T , Junction Tem perature (°C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRLR/U2905
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRLR/U2905
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R M S TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
Part Marking Information
TO-252AA (D-PARK)
EXAMPLE : THIS IS AN IRFR120
W ITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
IRFR
120
9U 1P
ASSEMBLY
SECOND PORTION
OF PART NUMBER
LOT CODE
8
www.irf.com
IRLR/U2905
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6 .73 (.26 5)
6 .35 (.25 0)
2.38 (.094)
2.19 (.086)
- A
-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
L EAD A SSIG N M EN TS
1 - G ATE
4
2 - D RA IN
6.4 5 (.245)
5.6 8 (.224)
3 - SO U R C E
4 - D RA IN
6 .22 (.2 45)
5 .97 (.2 35)
1.52 (.060)
1.15 (.045)
1
2
3
- B
-
N O TE S:
1
2
3
4
D IM EN SIO N IN G
&
TO LER AN C IN G P ER AN SI Y14.5M , 198 2.
2.28 (.0 90)
1.91 (.0 75)
9.65 (.380)
8.89 (.350)
C O NTR OL LIN G D IM EN SIO N : IN C H .
C O NF O R MS TO JEDE C O UTLINE TO -25 2AA.
D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP,
SO LDE R DIP M AX. +0.16 (.006).
1.14 (.045 )
0.76 (.030 )
1 .14 (.04 5)
0 .89 (.03 5)
3X
0.89 (.0 35)
0.64 (.0 25)
3X
0.25 (.010 )
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.09 0)
2X
Part Marking Information
TO-251AA (I-PARK)
EXAMPLE : THIS IS AN IRFU120
W ITH ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 9U1P
FIRST PORTION
OF PART NUMBER
IRFU
120
9U 1P
SECOND PORTION
OF PART NUMBER
ASSEMBLY
LOT CODE
www.irf.com
9
IRLR/U2905
Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
TRL
T RR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
FEED DIR ECT IO N
NO T ES :
1. CO NT RO LLING DIM EN SIO N : M ILLIM ET ER.
2. ALL DIM EN SIO NS ARE SH O W N IN M ILLIM ETERS ( INCHES ).
3. O UTLINE CO N FO RM S T O EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO NFO RM S TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
10
www.irf.com
相关型号：
U290E
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC,
TEMIC
U290E
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC
VISHAY
U291-E3
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AC, LEAD FREE, HERMETIC SEALED, TO-52, 3 PIN, FET General Purpose Small Signal
VISHAY
U291E
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC,
TEMIC
U291E
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC
VISHAY
©2020 ICPDF网 联系我们和版权申明