VS-HFA06TB120PBF [INFINEON]
Ultrafast, Soft Recovery Diode; 超快，软恢复二极管
| 型号： | VS-HFA06TB120PBF |
| 厂家： | 
Infineon |
| 描述： | Ultrafast, Soft Recovery Diode |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD -2.382 rev. D 12/00
HFA06TB120
TM
HEXFRED
Ultrafast, Soft Recovery Diode
BASE
Features
CATHODE
VR = 1200V
VF(typ.)* = 2.4V
IF(AV) = 6.0A
• UltrafastRecovery
• UltrasoftRecovery
• Very Low IRRM
4
• Very Low Qrr
Qrr (typ.)=116nC
IRRM(typ.) = 4.4A
trr(typ.) = 26ns
2
• SpecifiedatOperatingConditions
Benefits
3
1
ANODE
2
CATHODE
di(rec)M/dt (typ.)* = 100A/µs
• ReducedRFIandEMI
• Reduced Power Loss in Diode and Switching
Transistor
• HigherFrequencyOperation
• ReducedSnubbing
• ReducedPartsCount
TO-220AC
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
6 amps continuous current, the HFA06TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM
)
and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
countandheatsinksizes. TheHEXFREDHFA06TB120isideallysuitedforapplications
inpowersuppliesandpowerconversionsystems(suchasinverters), motordrives, and
many other similar applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max.
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
1200
8.0
80
24
62.5
25
V
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
A
W
-55 to +150
°C
Storage Temperature Range
* 125°C
1
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown
1200 ––– –––
V
IR = 100µA
Voltage
Max. Forward Voltage
––– 2.7 3.0
––– 3.5 3.9
––– 2.4 2.8
IF = 6.0A
IF = 12A
V
IF = 6.0A, TJ = 125°C
IRM
Max.Reverse LeakageCurrent ––– 0.26 5.0
––– 110 500
VR = VR Rated
µA
TJ = 125°C, VR = 0.8 x VR RatedD R
CT
LS
JunctionCapacitance
SeriesInductance
––– 9.0 14
––– 8.0 –––
pF
nH
VR = 200V
Rated
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr
ReverseRecoveryTime
–––
–––
–––
26
53
87
–––
80
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
trr1
ns TJ = 25°C
TJ = 125°C
trr2
130
IF = 6.0A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
ReverseRecoveryCharge
––– 4.4 8.0
––– 5.0 9.0
––– 116 320
––– 233 585
––– 180 –––
––– 100 –––
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
A
nC
dif/dt = 200A/µs
di(rec)M/dt1 PeakRateofRecovery
di(rec)M/dt2 Current During tb
A/µs
Thermal - Mechanical Characteristics
Parameter
Min.
Typ.
Max.
Units
Tlead
RthJC
RthJA
LeadTemperature
––––
––––
300
2.0
°C
!
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
––––
––––
––––
––––
––––
6.0
––––
––––
0.5
80
K/W
"
RthCS$
Wt
––––
––––
––––
12
2.0
g
0.07
––––
––––
(oz)
MountingTorque
Kg-cm
lbf•in
5.0
10
!
0.063 in. from Case (1.6mm) for 10 sec
"#Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
$
2
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
100
10
1
1000
100
10
T
= 150˚C
125˚C
J
100˚C
1
25˚C
0.1
0.01
0
200 400 600 800 1000 1200 1400
ReverseVoltage-VR(V)
100
10
1
T
= 150˚C
= 125˚C
J
T
= 25˚C
J
T
J
T
J
= 25˚C
0.1
0
2
4
6
1
10
100
1000
10000
ForwardVoltageDrop-VFM(V)
Fig.1-Typical Forward Voltage Drop Characteristics
ReverseVoltage-VR(V)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
10
D = 0.50
D = 0.20
1
D = 0.10
P
DM
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
0.1
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fig.4-MaximumThermal Impedance ZthJC Characteristics
3
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
25
20
15
10
5
110
100
90
I
I
F
F
= 6 A
= 4 A
V
R = 200V
= 125˚C
T
J
T
=
25˚C
J
80
IF = 6 A
IF = 4 A
70
60
50
40
VR = 200V
TJ = 125˚C
TJ
= 25˚C
30
20
0
100
100
1000
1000
dif/dt- (A/µs)
dif/dt- (A/µs)
Fig.5-Typical Reverse Recovery
Vs. dif/dt
Fig.6-Typical Recovery Current
Vs. dif/dt
10000
1000
100
1000
800
600
400
200
0
VR = 200V
TJ = 125˚C
TJ
= 25˚C
I
I
F
F
= 6 A
= 4 A
IF = 6 A
IF = 4 A
VR = 200V
TJ = 125˚C
TJ
= 25˚C
10
100
1000
100
1000
dif/dt- (A/µs)
Fig.8-TypicalStoredCharge vs.dif/dt
dif/dt- (A/µs)
Fig.7-Typical di(REC) M/dt vs.dif/dt
4
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
REVERSE RECOVERY CIRCUIT
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
dif/dt
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
di(rec)M/dt
I
RRM
RRM
5
0.75 I
RRM
1
di /dt
f
1. dif/dt - Rate of change of
current
through zero
crossing
4. Qrr - Area under curve
defined by trr and IRRM
2. IRRM - Peak reverse
recovery current
trr X IRRM
2
3. trr - Reverse recovery
Qrr =
time measured
from zero
crossing point of negative
going IF to point where a line 5. di(rec)M/dt - Peak rate of
passing through 0.75 IRRM
change of current during tb
portion of trr
and 0.50 IRRM
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
5
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
Outline Table
Conforms to JEDEC Outline TO-220AC
Dimensions in millimeters and inches
Ordering Information Table
DeviceCode
HF
A
06 TB 120
2
4
5
1
3
1
2
-
-
HexfredFamily
ProcessDesignator
A = A subs. elec. irrad.
B = B subs. Platinum
3
4
5
-
-
-
Average Current: Code 06 = 6 AMPS
Package Outline: Code TB = TO-220 2 Lead
Voltage code : Code 120 = 1200 V
6
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEANHEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81
3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2377 9936.
2
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7
相关型号：
VS-HFA06TB120STRLPBF
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VISHAY
VS-HFA06TB120STRRP
Rectifier Diode, 1 Phase, 1 Element, 6A, 1200V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3/2
VISHAY
VS-HFA06TB120STRRPBF
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3
VISHAY
VS-HFA08PB120PBF
DIODE 8 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Rectifier Diode
VISHAY
VS-HFA08PB60PBF
DIODE 8 A, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Rectifier Diode
VISHAY
VS-HFA08SD60S-M3
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, Rectifier Diode
VISHAY
VS-HFA08SD60SL-M3
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, Rectifier Diode
VISHAY
VS-HFA08SD60SR-M3
DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明