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BF1009S [INFINEON]

Silicon N-Channel MOSFET Tetrode; 硅N沟道MOSFET四极管

BF1009S


元器件型号：	BF1009S
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极管
PDF文件：	总5页 (文件大小：253K)
下载文档：	下载PDF数据表文档文件
型号参数：BF1009S参数

BF1009S_07

Silicon N-Channel MOSFET Tetrode

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12 INFINEON

BF1009SE6327HTSA1

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143, 4 PIN

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0 INFINEON

BF1009S-E6433

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SR

Silicon N-Channel MOSFET Tetrode

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14 INFINEON

BF1009SR

Silicon N-Channel MOSFET Tetrode

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75 INFINEON

BF1009SR-E6327

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SRE6327HTSA1

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143R, 4 PIN

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2 INFINEON

BF1009SR-E6433

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SW

TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R

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42 ETC

BF100V

SSR CONTROL MODULE 0-10V

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12 ETC

BF10-10

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

BF1012

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

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218 INFINEON

BF1012S

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

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284 INFINEON

BF1012W

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

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56 INFINEON

BF10-6

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

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