关闭背景特效

BF1009 [INFINEON]

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network; 硅N沟道MOSFET四极管（针对低噪声，高增益控制输入级可达到1GHz工作电压9 V综合稳定偏置网络

BF1009


元器件型号：	BF1009
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network 硅N沟道MOSFET四极管（针对低噪声，高增益控制输入级可达到1GHz工作电压9 V综合稳定偏置网络
PDF文件：	总4页 (文件大小：36K)
下载文档：	下载PDF数据表文档文件
型号参数：BF1009参数

BF1009E6327

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009S

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

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33 INFINEON

BF1009S

Silicon N-Channel MOSFET Tetrode

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24 INFINEON

BF1009S

Silicon N-Channel MOSFET Tetrode

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19 INFINEON

BF1009S_07

Silicon N-Channel MOSFET Tetrode

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12 INFINEON

BF1009SE6327HTSA1

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143, 4 PIN

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0 INFINEON

BF1009S-E6433

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SR

Silicon N-Channel MOSFET Tetrode

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14 INFINEON

BF1009SR

Silicon N-Channel MOSFET Tetrode

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75 INFINEON

BF1009SR-E6327

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SRE6327HTSA1

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-143R, 4 PIN

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2 INFINEON

BF1009SR-E6433

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 INFINEON

BF1009SW

TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R

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42 ETC

BF100V

SSR CONTROL MODULE 0-10V

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12 ETC

BF10-10

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

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